High-power white light-emitting diodes (LEDs) are fabricated by combining blue LEDs and
green ( Ba , Sr ) 2 Si O 4 : Eu 2 + and red Ca Al Si N 3 : Eu 2 + phosphors with varying …

We have proposed a new concept of metal package by which we can estimate the lifetime of
blue light-emitting diode (LED) chips with high accuracy. Components in conventional LED …

We have studied the low-temperature (4 K) photoluminescence (PL) of a modulation-doped
Al 0.37 Ga 0.63 N/GaN single heterostructure. Radiative recombination is observed between …

Gallium nitride pin rectifiers have been fabricated and characterised. The device structures
were grown by metalorganic chemical vapour deposition on c-plane sapphire substrates. The …

For the case of the white LED (phosphor converted), the temperature affects phosphor in
addition to chip and package. The heat can cause the decrease of the phosphor performance …

Optical properties of strain‐compensated InGaN/InGaN quantum well (QW) structures using
a InGaN substrate are investigated using the multiband effective mass theory. These results …

Using APL format Page 1 Observation of long photoluminescence decay times for high-quality
GaN grown by metalorganic chemical vapor deposition Ho Ki Kwon, CJ Eiting,a) DJH …

A study on the interface properties of Schottky contacts on (NH 4 ) 2 S x ‐treated n‐ and p‐type
In 0.5 Ga 0.5 P is carried out. The effects of sulfur (S) treatment on Schottky barrier height …

Deep level properties of S‐, Se‐, and Te‐doped In 1−x Ga x P layers grown by liquid phase
epitaxy are studied by deep level transient spectroscopy and capacitance‐temperature …

The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with
surface roughness (texture) can be changed by texture size, density, and thickness of GaN film …