… are those of the author(s) and do not necessarily represent those of the IMF or IMF policy.
Working Papers describe research in progress by the author(s) and are published to elicit …

As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect
transistor production, an atomic level understanding of their dielectric properties and the …

Soft x-ray photoemission spectroscopy has been applied to determine the binding energy
shifts and the valance band offset of HfO 2 grown on Hf metal. Charging of oxide films upon x-…

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the
valence-band offsets for the HfO 2 / SiO 2 / Si and HfO 2 / SiO x N y / Si systems. We …

… This observation is counterintuitive since sample C was sulfurized at lower H 2 S pressure
… H 2 S dissociation reaction H 2 S(g) → H 2 (g) + S(s) as can be inferred from the yellow S …

The valence and conduction band densities of states for the Hf O 2∕ Si O 2∕ Si structure
are determined by soft x-ray photoemission and inverse photoemission. First principles …

In this paper, we present a design and benchmarking methodology of Spin Wave Device (SWD)
circuits based on micromagnetic modeling. SWD technology is compared against a …

The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most
technologically important parameters. We report the band offsets of the Al/Al 2 O 3/GaAs structure …

… time, given that remittances make up a very important source of income for Turkey, remitted
earnings of Turkish workers abroad have the potential to play a key role in affecting Turkey’s …

… As a note of caution, we mention that semiconductor energy gaps are specific to the method(s)
used to determine them. It … S. Sayan and E. Garfunkel would like to thank J. Robertson, R. …