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[PDF][PDF] Etude des propriétés physiques des solides moléculaires à transition de spin en utilisant les méthodes non destructives
R Traiche - 2017 - dspace.usthb.dz
… Pour un champ de ligand faible (Δ<<π) ; la règle de Hund est suivie et les électrons
occupent un maximum d’orbitales t2g et eg avec un moment de spin total maximal, S=2. La …
occupent un maximum d’orbitales t2g et eg avec un moment de spin total maximal, S=2. La …
Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor …
S Traiche, M Trabelsi, A Bououden, MCE Yagoub - Electronics, 2023 - mdpi.com
… , where S 22 is superior to 0, as seen in Figure 8b, PLSs reveal S 22 ≈ − 6 dB ( C o u t = 1.3
pF) without L T . Moreover, an advantage of this work is the improvement in S 21 by 4 dB, as …
pF) without L T . Moreover, an advantage of this work is the improvement in S 21 by 4 dB, as …
Electro-Elastic Modeling of Multi-Step Transitions in Two Elastically Coupled and Sterically Frustrated 1D Spin Crossover Chains
R Traiche, H Oubouchou, K Boukheddaden - Crystals, 2023 - mdpi.com
… state ( L S , e g 0 t 2 g 6 , S = 0 ) to a paramagnetic high spin state ( H S , e g 2 t 2 g 4 , S = 2 )
… The SCO phenomenon is therefore generally possible when the central metal ion (here iron…
… The SCO phenomenon is therefore generally possible when the central metal ion (here iron…
Pseudo-nonlinear and athermal lensing effects on transverse properties of Cr3+ based solid-state lasers
… z R of the sample, where z R is the Rayleigh range of the … S 1 and S 2 are proportional to
the energy of the light pulse which is collected before and after the aperture, and the ratio S 2 /S …
the energy of the light pulse which is collected before and after the aperture, and the ratio S 2 /S …
Spatiotemporal observation and modeling of remarkable temperature scan rate effects on the thermal hysteresis in a spin-crossover single crystal
… ’s lamp, where I 0 is the specific power density, a is the optical absorption of the sample,
S is the specific surface and C p is the heat capacity. In the present model, the used intensity …
S is the specific surface and C p is the heat capacity. In the present model, the used intensity …
[PDF][PDF] Le raisonnement par analogie en physique des matériaux cas des milieux diélectriques et magnétiques
R Traiche - 2006 - dspace.usthb.dz
… Aussi c’est dans ce domaine que le rôle heuristique du raisonnement par analogie s’ est
révélé le plus important. D’un autre côté les polymères, dont l’utilisation a connu un essor …
révélé le plus important. D’un autre côté les polymères, dont l’utilisation a connu un essor …
[HTML][HTML] Elastic modeling of two-step transitions in sterically frustrated 1d binuclear spin-crossover chains
R Traiche, H Oubouchou, K Boukheddaden - Symmetry, 2021 - mdpi.com
… is associated with a fictitious two-state spin operator, S i . Thus, S i = + 1 will correspond to
the HS state, while the value S i … their associated spin states are denoted with S i A and S i B . …
the HS state, while the value S i … their associated spin states are denoted with S i A and S i B . …
Spatio-temporal aspects of the domain propagation in a spin-crossover lattice with defect
… towards the low-spin (LS) is investigated using an electro-elastic model … The present work
focusses on the case of a lattice in which is … It is found that the presence of the defect affects the …
focusses on the case of a lattice in which is … It is found that the presence of the defect affects the …
[PDF][PDF] Analytical Approach to Improve a Fully Integrated Class-F Power Amplifier Performances in 0.13 µm BiCMOS Technology Using Drain-Bulk Capacitor …
S Traiche, M Trabelsi, A Bououden, MCE Yagoub - Sat, 2023 - researchgate.net
This article reports a novel technique based on drain–bulk capacitor modulation to improve
the performance design of a class-F power amplifier (PA) used in low-power transceivers …
the performance design of a class-F power amplifier (PA) used in low-power transceivers …
3 GHz CMOS Doherty power amplifier for high efficiency
S Traiche, A Slimane - 2017 Seminar on Detection Systems …, 2017 - ieeexplore.ieee.org
… is the mobility of electrons in channel and Cox is the oxide capacitance of transistor MOS.
L is the length of channel and θ is the angle of conduction of the transistor that’s related to the …
L is the length of channel and θ is the angle of conduction of the transistor that’s related to the …
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