Moving current filaments in integrated DMOS transistors under short-duration current stress
M Denison, M Blaho, P Rodin, V Dubec… - … on Electron Devices, 2004 - ieeexplore.ieee.org
Integrated vertical DMOS transistors of a 90-V smart power technology are studied under
short-duration current pulses. Movement of current filaments and multiple hot spots observed …
short-duration current pulses. Movement of current filaments and multiple hot spots observed …
Advanced optical interferometric methods for nanosecond mapping of semiconductor devices under high energy pulses
V Dubec - 2005 - repositum.tuwien.at
Reliability of semiconductor devices is the first step for safe operation of electronic circuits.
For optimisation of devices and for verification of device simulation models the knowledge of …
For optimisation of devices and for verification of device simulation models the knowledge of …
Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry
D Pogány, V Dubec, S Bychikhin… - IEEE Electron device …, 2002 - ieeexplore.ieee.org
A novel two-dimensional backside optical imaging method for thermal energy mapping inside
semiconductor devices is presented. The method is based on holographic interferometry …
semiconductor devices is presented. The method is based on holographic interferometry …
Error analysis in phase extraction in a 2D holographic imaging of semiconductor devices
V Dubec, S Bychikhin, D Pogany… - … XVIII: Materials and …, 2004 - spiedigitallibrary.org
Backside transient interferometric mapping method is a useful tool for ns-resolution imaging
of transient changes in heat energy and free carrier concentration in semiconductor devices …
of transient changes in heat energy and free carrier concentration in semiconductor devices …
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system
G Haberfehlner, S Bychikhin, V Dubec, M Heer… - Microelectronics …, 2009 - Elsevier
Smart power DMOSes are analyzed under thermally unstable conditions up to the destruction
level using a new compact version of the transient interferometric mapping (TIM) method. …
level using a new compact version of the transient interferometric mapping (TIM) method. …
Thermal distribution during destructive pulses in ESD protection devices using a single-shot two-dimensional interferometric method
…, S Bychikhin, J Kuzmik, V Dubec… - IEEE transactions on …, 2003 - ieeexplore.ieee.org
Thermal distribution during single destructive electrostatic discharge (ESD) events is
investigated in smart power ESD protection devices using a two-dimensional holographic …
investigated in smart power ESD protection devices using a two-dimensional holographic …
Investigation of ESD protection elements under high current stress in CDM-like time domain using backside laser interferometry
S Bychikhin, V Dubec, M Litzenberger… - 2002 Electrical …, 2002 - ieeexplore.ieee.org
Switching dynamics and current flow homogeneity under very fast TLP (vf-TLP) stress is
investigated in smart power and CMOS technology ESD protection devices by means of optical …
investigated in smart power and CMOS technology ESD protection devices by means of optical …
Single-shot nanosecond thermal imaging of semiconductor devices using absorption measurements
D Pogany, V Dubec, S Bychikhin… - IEEE transactions on …, 2003 - ieeexplore.ieee.org
A nonscanning optical method for single-shot thermal imaging of semiconductor devices is
presented. The method detects changes in the band-to-band absorption due to local self-…
presented. The method detects changes in the band-to-band absorption due to local self-…
Current gain collapse in HBTs analysed by transient interferometric mapping method
S Bychikhin, V Dubec, J Kuzmik, J Wurfl… - 2007 European …, 2007 - ieeexplore.ieee.org
Thermal distribution during a current gain collapse event is investigated in multi-finger
InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse …
InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse …
[PDF][PDF] Kabinet divadelních studií při semináři estetiky
J Dubec - is.muni.cz
Tato práce vzniká především z jednoho důvodu. Tím je takřka naprostá netknutost námi
zkoumaného periodika divadelní či literární historií. Jde o fakt, který je na pováženou, protože …
zkoumaného periodika divadelní či literární historií. Jde o fakt, který je na pováženou, protože …