[HTML][HTML] Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate
C Schweiger, M Door, P Filianin, J Herkenhoff… - Review of Scientific …, 2022 - pubs.aip.org
In this paper, we report on the development of a fast high-voltage switch, which is based on
two enhancement mode N-channel silicon carbide metal–oxide–semiconductor field-effect
transistors in push–pull configuration. The switch is capable of switching high voltages up to
600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths≥
20 ns. Using this switch, it was demonstrated that, from the charge state distribution of
bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic …
two enhancement mode N-channel silicon carbide metal–oxide–semiconductor field-effect
transistors in push–pull configuration. The switch is capable of switching high voltages up to
600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths≥
20 ns. Using this switch, it was demonstrated that, from the charge state distribution of
bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic …