10/19/2004 The Body Effect.
doc 1/3
The Body Effect
In an integrated circuit using MOSFET devices, there can be
thousands or millions of transistors.
As a result, there are thousands or
millions of MOSFET source
terminals!
But, there is only one Body (B)—
the Silicon substrate.
Thus, if we were to tie (connect) all the MOSFET source
terminals to the single body terminal, we would be connecting
all the MOSFET source terminals to each other!
Jim Stiles The Univ. of Kansas Dept. of EECS
10/19/2004 The Body Effect.doc 2/3
This would almost certainly result in a useless circuit!
Thus, for integrated circuits, the MOSFET source terminals
are not connected to the substrate body.
Q: Yikes! What happens to
MOSFET behavior if the source
is not attached to the body ??
A: We must consider the MOSFET
Body Effect!
We note that the voltage vSB (voltage source-to-body) is not
necessarily equal to zero (i.e., vSB ≠ 0 )! Thus, were back to a
four-terminal MOSFET device.
There are many ramifications of this body effect; perhaps
the most significant is with regard to the threshold voltage
Vt.
We find that when vSB ≠ 0 , a more accurate expression of the
threshold voltage is:
Vt =Vt 0 + γ 2φf + vSB − γ 2φf
where γ and φf are MOSFET device parameters.
Jim Stiles The Univ. of Kansas Dept. of EECS
10/19/2004 The Body Effect.doc 3/3
Note the value Vt0 is the value of the threshold voltage when
vSB = 0, i.e.:
Vt =Vt 0 when vSB = 0.0
Thus, the value Vt0 is simply the value of the device parameter
Vt that we have been calling the threshold voltage up till now!
In other words, Vt0 is the value of the threshold voltage when
we ignored the Body Effect, or when vSB = 0.
It is thus evident that the term:
γ 2φf + vSB − γ 2φf
simply expresses an extra value added to the “ideal”
threshold voltage Vt0 when vSB ≠ 0 .
For many cases, we find that this Body Effect is relatively
insignificant, so we will (unless otherwise stated) ignore the
Body Effect.
However, do not conclude that the Body Effect is always
insignificant—it can in some cases have a tremendous impact
on MOSFET circuit performance!
Jim Stiles The Univ. of Kansas Dept. of EECS