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D2011K

This document summarizes the specifications of the TetraFET D2011UK metal gate RF silicon field effect transistor (FET). The FET is suitable for broadband applications up to 1 GHz, with features including low capacitance, high gain, and simplified amplifier design. Key specifications include a maximum power dissipation of 70W, drain-source breakdown voltage of 65V, and forward transconductance of 1.44 S.

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Gilmar Ferreira
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9K views2 pages

D2011K

This document summarizes the specifications of the TetraFET D2011UK metal gate RF silicon field effect transistor (FET). The FET is suitable for broadband applications up to 1 GHz, with features including low capacitance, high gain, and simplified amplifier design. Key specifications include a maximum power dissipation of 70W, drain-source breakdown voltage of 65V, and forward transconductance of 1.44 S.

Uploaded by

Gilmar Ferreira
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TetraFET

D2011UK
METAL GATE RF SILICON FET
MECHANICAL DATA

C
D
E
B

R
8

7 2
1

A
GOLD METALLISED
6 3
F
5 4
MULTI-PURPOSE SILICON
Q
O

N
DMOS RF FET
M 10W – 28V – 1GHz
J
K L
SINGLE ENDED
I
P
H

FEATURES
DBC3 Package
PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN
PIN 2 Drain PIN 6 Gate
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 3 Drain PIN 7 Gate
PIN 4 Source PIN 8 Source • LOW Crss
DIM mm Tol. Inches Tol.
A 6.47 0.08 .255 .003
• LOW NOISE
B 0.76 0.08 .030 .003
C 45° 5° 45° 5° • HIGH GAIN
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001 APPLICATIONS
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001 • HF/VHF/UHF COMMUNICATIONS
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003 from 1 MHz to 2 GHz
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
R 0.25 0.07 0.010 .003

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)


PD Power Dissipation 70W
BVDSS Drain – Source Breakdown Voltage 65V
BVGSS Gate – Source Breakdown Voltage ±20V
ID(sat) Drain Current 8A
Tstg Storage Temperature –65 to 150°C
Tj Maximum Operating Junction Temperature 200°C

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/00
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
D2011UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)


Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source
BVDSS VGS = 0 ID = 10mA 65 V
Breakdown Voltage
Zero Gate Voltage
IDSS VDS = 28V VGS = 0 8 mA
Drain Current
IGSS Gate Leakage Current VGS = 20V VDS = 0 8 mA
VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 1 7 V
gfs Forward Transconductance* VDS = 10V ID = 1.6A 1.44 S
GPS Common Source Power Gain PO = 10W 10 dB
h Drain Efficiency VDS = 28V IDQ = 0.8A 40 %
VSWR Load Mismatch Tolerance f = 1GHz 20:1 —
Ciss Input Capacitance VDS = 0 VGS = –5V f = 1MHz 96 pF
Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 48 pF
Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 4 pF

* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%

THERMAL DATA
RTHj–case Thermal Resistance Junction – Case Max. 2.5°C / W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 9/00
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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