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Gold Metallised Multi-Purpose Silicon Dmos RF Fet 5W - 28V - 1Ghz Single Ended

1. The document provides specifications for the TetraFET D2030UK, a gold metallised multi-purpose silicon DMOS RF FET suitable for broadband applications from 1 MHz to 1 GHz and capable of delivering 5W of power. 2. Key features of the TetraFET include simplified amplifier design, very low crossover capacitance, simple bias circuits, low noise, and high minimum gain of 13 dB. 3. Applications include HF/VHF/UHF communications from 1 MHz to 1 GHz. Absolute maximum ratings include a power dissipation of 30W, drain-source breakdown voltage of 65V, and maximum operating junction temperature of 200°C.

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Mänuel Älejandro
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30 views2 pages

Gold Metallised Multi-Purpose Silicon Dmos RF Fet 5W - 28V - 1Ghz Single Ended

1. The document provides specifications for the TetraFET D2030UK, a gold metallised multi-purpose silicon DMOS RF FET suitable for broadband applications from 1 MHz to 1 GHz and capable of delivering 5W of power. 2. Key features of the TetraFET include simplified amplifier design, very low crossover capacitance, simple bias circuits, low noise, and high minimum gain of 13 dB. 3. Applications include HF/VHF/UHF communications from 1 MHz to 1 GHz. Absolute maximum ratings include a power dissipation of 30W, drain-source breakdown voltage of 65V, and maximum operating junction temperature of 200°C.

Uploaded by

Mänuel Älejandro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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TetraFET

D2030UK
METAL GATE RF SILICON FET

MECHANICAL DATA
Dimensions in mm. GOLD METALLISED
MULTI-PURPOSE SILICON
5.50 0.15
2.313
0.2
DMOS RF FET
1.27 0.05 0.3 R.

2 PL.
0.47
1.65
2 PL. 4 PL.

5W 28V 1GHz
2 PL.
4

3
5

6
1.27 SINGLE ENDED
3.00 2.07 6.50 0.360
0.381 1.27
2 PL. 2 PL. 0.15 0.005
2 7
1.27

1 8
0.10 R.

0.47
2 PL.
TYP.
FEATURES
0.80
0.10
TYP.
4 PL.
4.90 0.15
0.10
TYP.
0.508
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW Crss
F-0127 PACKAGE
PIN 1 SOURCE PIN 5 SOURCE SIMPLE BIAS CIRCUITS
PIN 2 DRAIN PIN 6 GATE
PIN 3 DRAIN PIN 7 GATE LOW NOISE
PIN 4 SOURCE PIN 8 SOURCE
HIGH GAIN 13 dB MINIMUM

Ceramic Material: Alumina.


Parts can also be supplied with AlN or BeO for
improved thermal resistance. APPLICATIONS
Contact Semelab for details.
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)


PD Power Dissipation 30W
BVDSS Drain Source Breakdown Voltage * 65V
BVGSS Gate Source Breakdown Voltage* 20V
ID(sat) Drain Current 2A
Tstg Storage Temperature 65 to 150C
Tj Maximum Operating Junction Temperature 200C

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


Prelim. 2/99
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
D2030UK

ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)


Parameter Test Conditions Min. Typ. Max. Unit
DrainSource
BVDSS VGS = 0 ID = 10mA 65 V
Breakdown Voltage
Zero Gate Voltage
IDSS VDS = 28V VGS = 0 2 mA
Drain Current
IGSS Gate Leakage Current VGS = 20V VDS = 0 1 A
VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 1 5 V
gfs Forward Transconductance* VDS = 10V ID = 0.4A 0.36 S
GPS Common Source Power Gain PO = 5W 13 dB
Drain Efficiency VDS = 28V IDQ = 0.4A 40 %
VSWR Load Mismatch Tolerance f = 1GHz 20:1
Ciss Input Capacitance VDS = 0V VGS = 5V f = 1MHz 24 pF
Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 12 pF
Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 1 pF

* Pulse Test: Pulse Duration = 300 s , Duty Cycle 2%

THERMAL DATA
RTHjcase Thermal Resistance Junction Case Max. 6C / W

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


Prelim. 2/99
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk

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