2N3904/MMBT3904/PZT3904

2N3904 MMBT3904 PZT3904

C C

E E
C
C TO-92 B
B SOT-23 B
E SOT-223
Mark: 1A

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3904 *MMBT3904 **PZT3904
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

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2N3904/MMBT3904/PZT3904
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 40 V
Voltage
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V 40
IC = 1.0 mA, VCE = 1.0 V 70
IC = 10 mA, VCE = 1.0 V 100 300
IC = 50 mA, VCE = 1.0 V 60
IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0, 4.0 pF
f = 1.0 MHz
Cibo Input Capacitance VEB = 0.5 V, IC = 0, 8.0 pF
f = 1.0 MHz
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5.0 dB
RS =1.0kΩ,f=10 Hz to 15.7kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns
tf Fall Time IB1 = IB2 = 1.0 mA 50 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)

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2N3904/MMBT3904/PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics
Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYP ICAL PULSED CURRE NT GAIN

500
V CE = 5V 0.15
400 β = 10

125 °C 125 °C
300
25 °C 0.1

200 25 °C

- 40 °C 0.05
100
- 40 °C
0
0.1 1 10 100 0.1 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)

1
1 β = 10 VCE = 5V

0.8 - 40 °C
0.8 - 40 °C 25 °C

25 °C 0.6
0.6 125 °C

125 °C 0.4

0.4
0.2
0.1 1 10 100 0.1 1 10 100
IC - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Capacitance vs

vs Ambient Temperature Reverse Bias Voltage
10
ICBO- COLLECTOR CURRENT (nA)

500
f = 1.0 MHz
100 VCB = 30V
CAPACITANCE (pF)

5
10 4
C ibo
3
1
2
0.1 C obo

1
25 50 75 100 125 150 0.1 1 10 100
TA - AMBIENT TEMPERATURE ( °C) REVERSE BIAS VOLTAGE (V)

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2N3904/MMBT3904/PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance

12 12
I C = 1.0 mA V CE = 5.0V I C = 1.0 mA
R S = 200Ω
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

10 10
I C = 50 µA I C = 5.0 mA
8 R S = 1.0 kΩ 8 I C = 50 µA
I C = 0.5 mA
6 R S = 200Ω 6

4 4 I C = 100 µA

2 2
I C = 100 µA, R S = 500 Ω

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )

Current Gain and Phase Angle Power Dissipation vs

vs Frequency Ambient Temperature
50 0 1
- CURRENT GAIN (dB)

PD - POWER DISSIPATION (W)

45 h fe 20
40 40 SOT-223
θ - DEGREES

0.75
35 60 TO-92
30 80
25 θ 100 0.5
20 120
SOT-23
15 140
V CE = 40V 160
10 0.25
fe

5 I C = 10 mA 180
h

0
1 10 100 1000 0
f - FREQUENCY (MHz) 0 25 50 75 100 125 150
TEMPERATURE (o C)

Turn-On Time vs Collector Current Rise Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = VCC = 40V I B1 = I B2 =
10 10
40V
t r - RISE TIME (ns)

100 15V 100

TIME (nS)

T J = 25°C
t r @ V CC = 3.0V
T J = 125°C

2.0V

10 10
t d @ VCB = 0V
5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

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2N3904/MMBT3904/PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Storage Time vs Collector Current Fall Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
t S - STORAGE TIME (ns)

T J = 25°C
T J = 125°C VCC = 40V

t f - FALL TIME (ns)

100 100
T J = 125°C
T J = 25°C

10 10

5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Current Gain Output Admittance

500 100
h oe - OUTPUT ADMITTANCE ( µmhos)

V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
T A = 25oC T A = 25oC
h fe - CURRENT GAIN

100
10

10 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Input Impedance Voltage Feedback Ratio

)
_4

100 10
V CE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

V CE = 10 V
f = 1.0 kHz
h ie - INPUT IMPEDANCE (kΩ )

f = 1.0 kHz
T A = 25oC 7 T A = 25oC

10 5
4

1
2

0.1 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

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2N3904/MMBT3904/PZT3904
NPN General Purpose Amplifier
(continued)

Test Circuits 3.0 V

300 ns 275 Ω
10.6 V

Duty Cycle = 2%
Ω
10 KΩ
0
- 0.5 V C1 < 4.0 pF

< 1.0 ns

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 < t1 < 500 µs t1

10.9 V 275 Ω

Duty Cycle = 2%

0 Ω
10 KΩ

C1 < 4.0 pF

- 9.1 V 1N916

< 1.0 ns

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

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