6MBI15GS-060 IGBT Modules
600V / 15A 6 in one-package
Features
· Compact Single in -line package
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
Collector Continuous IC 15 A
current 1ms IC pulse 30 A
-I C 15 A
1ms -IC pulse 30 A
Max. power dissipation PC 60 W
Operating temperature Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation voltage Vis AC 2000 (1min.) V
Screw torque Mounting *1 1.7 N·m
*1 : Recommendable value : 1.3 to 1.7 N·m (M4)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 0.1 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 5.5 – 8.5 VCE=20V, IC=15mA V
Collector-Emitter saturation voltage VCE(sat) – – 2.8 VGE=15V, IC=15A V
Input capacitance Cies – 975 – VGE=0V pF
Output capacitance Coes – 225 – VCE=10V
Reverse transfer capacitance Cres – 54 – f=1MHz
Turn-on time ton – – 1.2 VCC=300V µs
tr – – 1.0 IC=15A
Turn-off time toff – – 1.0 VGE=±15V
tf – – 0.35 RG=150ohm
Diode forward on voltage VF – – 3.0 IF=15A, VGE=0V V
Reverse recovery time trr – – 0.3 IF=15A, -di/dt=45A/µs, VGE=-10V µs
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c) – – 2.08 IGBT °C/W
Thermal resistance Rth(j-c) – – 3.0 Diode °C/W
Rth(c-f)*2 – 0.06 – the base to cooling fin °C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI15GS-060 IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
30 30
25 25
Collector current : Ic [A]
Collector current : Ic [A]
20 20
15 15
10 10
5 5
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Tj=125°C
10 10
VCE [V]
VCE [V]
8 8
Collector-Emitter voltage :
Collector-Emitter voltage :
6 6
4 4
2 2
0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Switching time vs. Collector current
Vcc=300V, RG=150 ohm, VGE=±15V, Tj=25°C Vcc=300V, RG=150 ohm, VGE=±15V, Tj=125°C
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000 1000
100 100
10 10
0 5 10 15 20 25 0 5 10 15 20 25
Collector current : Ic [A] Collector current : Ic [A]
6MBI15GS-060 IGBT Module
Switching time vs. RG Switching time vs. RG
Vcc=300V, Ic=15A, VGE=±15V, Tj=25°C Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C
5000 5000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000 1000
100 100
10 10
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
Gate resistance : RG [ohm] Gate resistance : RG [ohm]
Dynamic input characteristics Capacitance vs. Collector-Emitter voltage
Tj=25°C Tj=25°C
500 25 5000
400
Capacitance : Cies, Coes, Cres [pF]
20
Collector-Emitter voltage : VCE [V]
1000
Gate-Emitter voltage : VGE [V]
300 15
100
200 10
100 5
10
0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30
Gate charge : Qg [nC] Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area
+VGE=15V, -VGE <= 15V, Tj <= 125°C, RG => 150 ohm Transient thermal resistance
10
140
Thermal resistance : Rth (j-c) [°C/W]
120
100
Collector current : Ic [A]
80
1
60
40
20
0 0.1
0 100 200 300 400 500 600 0.001 0.01 0.1 1
Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.]
6MBI15GS-060 IGBT Module
Switching loss vs. Collector current Switching loss vs. Gate resistance
Vcc=300V, RG=150 ohm, VGE=±15V, Tj=125°C Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C
1.6 2.5
1.4
Switching loss : Eon, Eoff, Err [mJ/pluse]
Switching loss : Eon, Eoff, Err [mJ/pluse]
2.0
1.2
1.0
1.5
0.8
0.6 1.0
0.4
0.5
0.2
0.0 0.0
0 5 10 15 20 25 0 100 200 300 400 500 600 700 800
Collector current : Ic [A] Gate resistance : RG [ohm]
Reverse recovery characteristics
Forward current vs. Forward voltage trr, Irr, vs. IF
35
30
Reverse recovery time : trr [n sec.]
Reverse recovery current : Irr [A]
100
25
Forward current : IF [A]
20
15
10
10
0 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25
Forward voltage : VF [V] Forward current : IF [A]
Outline Drawings, mm
