FGH30S130P 1300 V, 30 A Shorted-anode IGBT

April 2013

FGH30S130P
1300 V, 30 A Shorted-anode IGBT
Features General Description
• High Speed Switching Using advanced field stop trench and shorted-anode technol-
• Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A ogy, Fairchild®’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
• High Input Impedance
applications. The device can operate in parallel configuration
• RoHS Compliant
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.

Applications
• Induction Heating, Microwave Oven

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings T C = 25°C unless otherwise noted

Symbol Description Ratings Unit

VCES Collector to Emitter Voltage 1300 V
VGES Gate to Emitter Voltage ±25 V
Collector Current @ TC = 25oC 60 A
IC
o
Collector Current @ TC = 100 C 30 A
ICM (1) Pulsed Collector Current 90 A

IF Diode Continuous Forward Current @ TC = 25oC 60 A

IF Diode Continuous Forward Current @ TC = 100oC 30 A

o
Maximum Power Dissipation @ TC = 25 C 500 W
PD
o
Maximum Power Dissipation @ TC = 100 C 250 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case, Max -- 0.3 C/W
o
RJA Thermal Resistance, Junction to Ambient, Max -- 40 C/W

Notes:
1: Limited by Tjmax

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH30S130P FGH30S130P TO-247 - - 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
ICES Collector Cut-Off Current VCE = 1300, VGE = 0V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 30mA, VCE = VGE 4.5 6.0 7.5 V
IC = 30A, VGE = 15V
- 1.75 2.3 V
TC = 25oC
VCE(sat) Collector to Emitter Saturation Voltage
IC = 30A, VGE = 15V,
- 1.85 - V
TC = 125oC
IC = 30A, VGE = 15V,
- 1.9 - V
TC = 175oC

VFM Diode Forward Voltage IF = 30A, TC = 25oC - 1.7 2.2 V

IF = 30A, TC = 175oC - 2.1 - V

Dynamic Characteristics
Cies Input Capacitance - 3345 - pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance - 75 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characcteristics
td(on) Turn-On Delay Time - 39 - ns
tr Rise Time - 360 - ns
td(off) Turn-Off Delay Time VCC = 600V, IC = 30A, - 620 - ns
tf Fall Time RG = 10, VGE = 15V, - 160 210 ns
Resistive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.3 - mJ
Eoff Turn-Off Switching Loss - 1.22 1.6 mJ
Ets Total Switching Loss - 2.52 - mJ
td(on) Turn-On Delay Time - 38 - ns
tr Rise Time - 375 - ns
td(off) Turn-Off Delay Time VCC = 600V, IC = 30A, - 635 - ns
tf Fall Time RG = 10, VGE = 15V, - 270 - ns
Resistive Load, TC = 175oC
Eon Turn-On Switching Loss - 1.59 - mJ
Eoff Turn-Off Switching Loss - 1.78 - mJ
Ets Total Switching Loss - 3.37 - mJ
Qg Total Gate Charge - 78 - nC
VCE = 600V, IC = 30A,
Qge Gate to Emitter Charge - 4.2 - nC
VGE = 15V
Qgc Gate to Collector Charge - 33.3 - nC

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

200 200
o o 20V
T C = 25 C 20V 15V T C = 175 C 15V
12V 12V
160 160

Collector Current, IC [A]

VGE = 17V
Collector Current, IC [A]

VGE = 17V

120 10V 120

10V

80 80
9V 9V

8V
40 8V 40
7V
7V
0 0
0 2 4 6 8 0.0 2.0 4.0 6.0 8.0
Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteritics
200 200
Common Emitter Common Emitter
VGE = 15V VCE = 20V
160 o 160 o
T C = 25 C TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
T C = 175 C TC = 175 C

120 120

80 80

40 40

0 0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 3.0 6.0 9.0 12.0 15.0
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,V GE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5 20
Common Emitter Common Emitter
VGE = 15V o
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]

T C = 25 C
3.0 16
60A

2.5 12

2.0 30A
8

60A
IC = 15A 30A
1.5 4

IC = 15A
1.0 0
25 50 75 100 125 150 175 4 8 12 16 20
o Gate-Emitter Voltage, VGE [V]
Collector-EmitterCase Temperature, TC [ C]

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics

20 10000
Common Emitter
o Cies
T C = 175 C
Collector-Emitter Voltage, VCE [V]

16

Capacitance [pF]
1000
12

8 Coes
30A
100
60A Cres
Common Emitter
4
VGE = 0V, f = 1MHz
IC = 15A
o
T C = 25 C
0 10
4 8 12 16 20 1 10 20 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, V CE [V]

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics

15
Common Emitter 100
o
TC = 25 C 400V
600V
Gate-Emitter Voltage, VGE [V]

12 10s
Collector Current, Ic [A]

10 100s

9 VCC = 200V 1ms

10 ms
DC
1
6

*Notes:
0.1 o
3 1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0 0.01
0 50 100 150 200 250 300 350 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-On Characteristics vs Figure 12. Turn-off Characteristics vs.

Gate Resistance Gate Resistance
500 10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
tr
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]

o
TC = 175 C td(off)

100 1000

Common Emitter
VCC = 600V, VGE = 15V
td(on) IC = 30A
tf
o
TC = 25 C
o
TC = 175 C
20 100
10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG [] Gate Resistance, RG []

©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics VS. Figure 14.Turn-off Characteristics VS.

Collector Current Collector Current
2500 2500
Common Emitter Common Emitter
VGE = 15V, RG = 10 VGE = 15V, RG = 10
1000
TC = 25oC tr TC = 25oC
o 1000 o
TC = 175 C TC = 175 C

Switching Time [ns]

Switching Time [ns]

td(off)

100
tf
td(on)

10 100
20 40 60 20 40 60
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Collector Current
10 30k
Common Emitter Common Emitter
VCC = 600V, VGE = 15V VGE = 15V, RG = 10
IC = 30A 10k T C = 25 C
o

o
TC = 25 C T C = 175oC
Switching Loss [uJ]
Switching Loss [mJ]

o
TC = 175 C

1k

1
Eoff

{ } Eon
{
Eoff

0.5
100
Eon
{
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70
Gate Resistance, RG [] Collector Current, IC [A]

Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
80
100

o
Collector Current, IC [A]

TJ = 25 C
Forward Current, IF [A]

10
10
o
TJ = 175 C

o
Safe Operating Area TC = 25 C
VGE = 15V, TC = 175 C
o 1 o
TC = 175 C
1
1 10 100 1000 0.5
0 1 2
Collector-Emitter Voltage, VCE [V] Forward Voltage, VF [V]

©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Figure 19. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5

0.1 0.2
0.1
0.05
0.02
0.01 PDM
0.01 single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]

©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
Mechanical Dimensions

TO-247A03

©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH30S130P Rev. C0
 FGH30S130P 1300 V, 30 A Shorted-anode IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™ FPS™ Sync-Lock™
AccuPower™ F-PFS™ ® tm
®*
® ® ®
AX-CAP * FRFET PowerTrench
SM
BitSiC™ Global Power Resource PowerXS™
TinyBoost™
Build it Now™ Green Bridge™ Programmable Active Droop™
TinyBuck™
CorePLUS™ Green FPS™ QFET®
TinyCalc™
CorePOWER™ Green FPS™ e-Series™ QS™
TinyLogic®
CROSSVOLT™ Gmax™ Quiet Series™
TINYOPTO™
CTL™ GTO™ RapidConfigure™
TinyPower™
Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™
DEUXPEED® ISOPLANAR™
TinyWire™
Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK® and Better™ SignalWise™
TriFault Detect™
EfficentMax™ MegaBuck™ SmartMax™
TRUECURRENT®*
ESBC™ MICROCOUPLER™ SMART START™
SerDes™
® MicroFET™ Solutions for Your Success™
MicroPak™ SPM®
Fairchild ® MicroPak2™ STEALTH™
MillerDrive™ SuperFET® UHC®
Fairchild Semiconductor®
MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™
mWSaver™ SuperSOT™-6 UniFET™
FACT®
OptoHiT™ SuperSOT™-8 VCX™
FAST®
OPTOLOGIC ® SupreMOS ® VisualMax™
FastvCore™
OPTOPLANAR ®
SyncFET™ VoltagePlus™
FETBench™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH30S130P Rev. C0
This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.