FGH60N60SMD — 600 V, 60 A Field Stop IGBT

November 2013

FGH60N60SMD
600 V, 60 A Field Stop IGBT
Features General Description
o
• Maximum Junction Temperature: TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of
• Positive Temperaure Co-efficient for easy Parallel Operating field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
• High Current Capability
tions where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
Gate to Emitter Voltage  20 V
VGES
Transient Gate-to-Emitter Voltage  30 V
Collector Current @ TC = 25oC 120 A
IC
Collector Current @ TC = 100oC 60 A
ICM (1) Pulsed Collector Current 180 A
o
Diode Forward Current @ TC = 25 C 60 A
IF
Diode Forward Current @ TC = 100oC 30 A
IFM (1) Pulsed Diode Maximum Forward Current 180 A
Maximum Power Dissipation @ TC = 25oC 600 W
PD
Maximum Power Dissipation @ TC = 100oC 300 W
o
TJ Operating Junction Temperature -55 to +175 C
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case - 0.25 oC/W

o
RJC(Diode) Thermal Resistance, Junction to Case - 1.1 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH60N60SMD FGH60N60SMD TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.6 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 3.5 4.5 6.0 V
IC = 60 A, VGE = 15 V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60 A, VGE = 15 V,
- 2.1 - V
TC = 175oC

Dynamic Characteristics
Cies Input Capacitance - 2915 - pF
Coes Output Capacitance VCE = 30 V, VGE = 0 V, - 270 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 85 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 18 27 ns
tr Rise Time - 47 70 ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 104 146 ns
tf Fall Time RG = 3 , VGE = 15 V, - 50 68 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.26 1.94 mJ
Eoff Turn-Off Switching Loss - 0.45 0.6 mJ
Ets Total Switching Loss - 1.71 2.54 mJ
td(on) Turn-On Delay Time - 18 - ns
tr Rise Time - 41 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 60 A, - 115 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 48 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 2.1 - mJ
Eoff Turn-Off Switching Loss - 0.78 - mJ
Ets Total Switching Loss - 2.88 - mJ

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

Qg Total Gate Charge - 189 284 nC
VCE = 400 V, IC = 60 A,
Qge Gate to Emitter Charge - 20 30 nC
VGE = 15 V
Qgc Gate to Collector Charge - 91 137 nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25 C o
- 2.1 2.7
VFM Diode Forward Voltage IF = 30 A V
TC = 175oC - 1.7 -
Erec Reverse Recovery Energy TC = 175oC - 79 - uJ
TC = 25oC - 30 39
trr Diode Reverse Recovery Time IF =30 A, diF/dt = 200 A/s ns
TC = 175oC - 72 -
TC = 25oC - 44 62
Qrr Diode Reverse Recovery Charge nC
o
TC = 175 C - 238 -

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
o 20V o 20V 12V
TC = 25 C 12V TC = 175 C
15V 15V
150 10V 150 10V

Collector Current, IC [A]

Collector Current, IC [A]

120 120

90 90

60 VGE = 8V
60
VGE = 8V

30 30

0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
180
180
Common Emitter
Common Emitter VCE = 20V
VGE = 15V 150 o
150 TC = 25 C
Collector Current, IC [A]

o
TC = 25 C
Collector Current, IC [A]

o
TC = 175 C
o
TC = 175 C 120
120

90
90

60
60

30
30

0
0 2 4 6 8 10 12
0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5
20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

VGE = 15V TC = -40 C

3.0 120A 16

2.5
12

60A
2.0
8

IC = 30A 60A
120A
1.5
4
IC = 30A

1.0
25 50 75 100 125 150 175 0
o 4 8 12 16 20
Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20
20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

T C = 25 C TC = 175 C

Collector-Emitter Voltage, VCE [V]

16
16

12
12

8
8

60A 60A 120A

120A
4
4
IC = 30A
IC = 30A
0
0 4 8 12 16 20
4 8 12 16 20
Gate-Emitter Voltage, V GE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

7000 15
Common Emitter Common Emitter
o
6000 VGE = 0V, f = 1MHz TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
TC = 25 C 12
VCC = 200V
5000
Capacitance [pF]

300V
4000 9
400V
Cies
3000
6

2000
Coes 3
1000
Cres

0 0
0.1 1 10 30 0 40 80 120 160 200
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
300 100
10s 80
100
tr
100s
1ms 60
Collector Current, Ic [A]

10 ms
Switching Time [ns]

10 DC
40

td(on)
1
Common Emitter
20 VCC = 400V, VGE = 15V
*Notes:
IC = 60A
0.1 o
1. TC = 25 C o
TC = 25 C
o
2. TJ = 175 C o
TC = 175 C
3. Single Pulse
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ ]

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
6000 1000
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 3
IC = 60A o
TC = 25 C
o
1000 TC = 25 C o
TC = 175 C tr
Switching Time [ns]

Switching Time [ns]

TC = 175 C
o 100
td(off)

td(on)
100 10
tf

10 1
0 10 20 30 40 50 0 30 60 90 120
Gate Resistance, RG [] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000 5

Eon
td(off)
Switching Loss [mJ]
Switching Time [ns]

100
1
tf Eoff

Common Emitter
10 VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 3 IC = 60A
o o
TC = 25 C TC = 25 C
o o
TC = 175 C TC = 175 C

1 0.1
0 30 60 90 120 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ ]

Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
10 300

100
Eon
Collector Current, IC [A]
Switching Loss [mJ]

Eoff
10
0.1 Common Emitter
VGE = 15V, RG = 3
o
TC = 25 C Safe Operating Area
o o
TC = 175 C VGE = 15V, TC = 175 C

0.01 1
0 30 60 90 120 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
130 180
120 Common Emitter Square Wave
VGE = 15V 160 o
110 TJ < 175 C, D = 0.5, VCE = 400V
100 VGE = 15/0V, RG = 3
Collector Current, IC [A]

140

Collector Current, IC [A]

90
120
80
70 100 Tc = 75 C
o

60
80
50 o
Tc = 100 C
40 60
30 40
20
10 20

0
25 50 75 100 125 150 175 1k 10k 100k 1M
o
Case Temperature, TC [ C] Switching Frequency, f [Hz]

Figure 21. Forward Characteristics Figure 22. Reverse Current

200 10000
o
TC = 175 C
100
o 1000
TC = 175 C
Reverse Current, IR [uA]
Forward Current, IF [A]

100 TC = 125 C
o

o
TC = 125 C
10
o o
10 TC = 75 C TC = 75 C
o
TC = 25 C o
1
TC = 25 C
o
TC = 75 C ----
o
TC = 125 C ---- 0.1 TC = 25 C
o

o
TC = 175 C
1 0.01
0 1 2 3 4 0 100 200 300 400 500 600
Forward Voltage, VF [V]
Reverse Voltage,VR [V]

Figure 23. Stored Charge Figure 24. Reverse Recovery Time

350 100
o o
TC = 25 C TC = 25 C
Stored Recovery Charge, Qrr [nC]

o 90 o
Reverse Recovery Time, trr [ns]

300 TC = 175 C ---- TC = 175 C ----

80
250
70
200
60
150 diF/dt = 100A/s
50
diF/dt = 200A/s
diF/dt = 100A/s
100 diF/dt = 200A/s
40

50 30

0 20
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Forward Current, IF [A] Forward Current, IF [A]

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Typical Performance Characteristics

Figure 25.Transient Thermal Impedance of IGBT

0.5
Thermal Response [Zthjc]

0.5
0.1
0.2
0.1
0.05
0.02
0.01 PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

Figure 26.Transient Thermal Impedance of Diode

5
Thermal Response [Zthjc]

1
0.5

0.2
0.1 0.1
0.05
0.02
0.01 PDM
0.01 single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
Mechanical Dimensions

Figure 27. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

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©2010 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGH60N60SMD Rev. C1
 FGH60N60SMD — 600 V, 60 A Field Stop IGBT
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Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

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Semiconductor. The datasheet is for reference information only.
Rev. I66

©2010 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FGH60N60SMD Rev. C1