Silan

Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet

60A, 600V FIELD STOP IGBT

C
DESCRIPTION 2

1
SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer G

the optimum performance for induction Heating,UPS,SMPS and PFC

3
application. E

FEATURES
1
 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A 12
3
2 3

 Low conduction loss TO-247-3L TO-247S-3L

 Fast switching
 High input impedance

1 2 1 2
3 TO-3PN
TO-3P 3

NOMENCLATURE

SGT 60 N 60 F D 1 P7
IGBT series Package
P7 : TO-247-3L
Current, 70: 70A

N : N Channel 1,2,3… : Version No.

NE : N-channel planar
gate with ESD Blank: Standard diode
T : Field Stop 3/4 M : Standard Diode, full range
U : Field Stop 4+ R : Rapid Diode
V : Field Stop 5 B : Rapid Diode, full range
W: Field Stop 6 S : Soft Diode, full range
X : Field Stop 7
D : Packaged with fast recovery diode
R : RC IGBT
Voltage, 65: 650V
120: 1200V
L : Ultra low switching，recommended frequency ~2KHz
Q : Low switching，recommended frequency2~20KHz
S : Standard frequency ，recommended frequency5~40KHz
F : Fast switching，recommended frequency10~60KHz
UF : Ultra fast switching，recommended frequency 40KHz~

ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type
SGT60N60FD1PN TO-3P 60N60FD1 Pb free Tube
SGT60N60FD1P7 TO-247-3L 60N60FD1 Pb free Tube
SGT60N60FD1PS TO-247S-3L 60N60D1 Pb free Tube
SGT60N60FD1PT TO-3PN 60N60FD1 Pb free Tube

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet

ABSOLUTE MAXIMUM RATINGS (TC = 25°C UNLESS OTHERWISE NOTED)

Characteristics Symbol Ratings Units
Collector to Emitter Voltage VCE 600 V
Gate to Emitter Voltage VGE ±20 V
TC=25°C 120
Collector Current IC A
TC=100°C 60
Pulsed Collector Current ICM 180 A
Maximum Power Dissipation (TC=25C) PD 321 W
Operating Junction Temperature TJ -55～+175 C
Storage Temperature Range Tstg -55～+175 C

THERMAL CHARACTERISTICS
Characteristics Symbol Ratings Units
Thermal Resistance, Junction to Case(IGBT)(TO-3P) RθJC 0.39 C/W
Thermal Resistance, Junction to Case(FRD)(TO-3P) RθJC 1.10 C/W
Thermal Resistance, Junction to Ambient(TO-3P) RθJA 40 C/W

ELECTRICAL CHARACTERISTICS OF IGBT(TC=25°C, UNLESS OTHERWISE NOTED)

Characteristics Symbol Test conditions Min. Typ. Max. Units
Collector to Emitter Breakdown Voltage BVCE VGE=0V,IC=250uA 600 -- -- V
C-E Leakage Current ICES VCE=600V,VGE=0V -- -- 200 μA
G-E Leakage Current IGES VGE=20V,VCE=0V -- -- ±400 nA
G-E Threshold Voltage VGE(th) IC=250uA,VCE=VGE 4.0 5.0 6.5 V
Collector to Emitter IC=60A,VGE=15V -- 2.2 2.7 V
VCE(sat)
Saturation Voltage IC=60A,VGE=15V,TC=125C -- 2.6 -- V
Input Capacitance Cies VCE=30V -- 2850 --
Output Capacitance Coes VGE=0V -- 294 -- pF
Reverse Transfer Capacitance Cres f=1MHz -- 85 --
Turn-On Delay Time Td(on) -- 36 --
Rise Time Tr VCE=400V -- 142 --
ns
Turn-Off Delay Time Td(off) IC=60A -- 193 --
Fall Time Tf Rg=10Ω -- 136 --
Turn-On Switching Loss Eon VGE=15V -- 3.72 --
Turn-Off Switching Loss Eoff Inductive Load, -- 1.77 -- mJ
Total Switching Loss Est -- 5.49 --
Total Gate Charge Qg -- 179 --
VCE=400V,IC=60A,
Gate to Emitter Charge Qge -- 23 -- nC
VGE=15V
Gate to Collector Charge Qgc -- 100 --

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
ELECTRICAL CHARACTERISTICS OF FRD(TC=25°C UNLESS OTHERWISE NOTED)
Characteristics Symbol Test conditions Min. Typ. Max. Units
IF=30A,TC=25C -- 1.9 2.6
Diode Forward Voltage VFM V
IF=30A,TC=125C -- 1.5 --
Diode Reverse Recovery Time Trr IES=30A,dIES/dt=200A/μs -- 38 -- ns
Diode Reverse Recovery Charge Qrr IES=30A,dIES/dt=200A/μs -- 85 -- nC

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.7

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTICS CURVE

Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristic

180 100
VGE=20V TC=125°C
VGE=15V TC=25°C
150
Collector Current – IC(A)

Collector Current – IC(A)

VGE=12V 80
VGE=10V
120 VGE=8V
60

90
40
60

20
30
Common Emitter
VCE=20V
0 0
0 2 4 6 0 5 10 15
Collector-Emitter Voltage – VCE(V) Gate-Emitter Voltage – VGE(V)

Figure 3. Typical Saturation Voltage Characteristic Figure 4. Saturation Voltage vs. VGE
180 20
Collector-Emitter Voltage – VCE(V)

IC=30A_25°C
TC=125°C
150 TC=25°C IC=60A_25°C
16
Collector Current – IC(A)

IC=120A_25°C

120
12

90
8
60

4
30
Common Emitter
VGE=15V
0 0
0 2 4 6 4 8 12 16 20
Collector-Emitter Voltage – VCE(V) Gate-Emitter Voltage – VGE(V)

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. Temperature
20 4
Collector-Emitter Voltage– VCE(V)
Collector-Emitter Voltage– VCE(V)

IC=30A_125°C IC=30A
IC=60A_125°C 3.5 IC=60A
16
IC=120A_125°C IC=120A

3
12

2.5
8
2

4
1.5
Common Emitter
VGE=15V
0 1
4 8 12 16 20 0 25 50 75 100 125 150
Gate-Emitter Voltage– VGE(V) Case Temperature – TC(°C)

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Figure 7. Capacitance Characteristic Figure 8. Gate Charge Characteristic

6000 15
Cies(pF)
VC=100V

Gate-Emitter Voltage - VGE(V)

Coes(pF)
5000 VC=200V
Cres(pF) 12
VC=300V
4000
9
C(pF)

3000
6
2000

3
1000 Common Emitter
VGE=0V, f=1MHz Common Emitter
TC=25°C TC=25°C
0 0
1 10 35 0 40 80 120 160 200
Collector-Emitter Voltage – VCE(V) Gate Charge – Qg(nC)

Figure 9. Turn-on Characteristic vs. Gate Resistance Figure 10. Turn-off Characteristic vs. Gate Resistance
1000 10000
Common Emitter Emitter in common
VCC=400V, VCC=400V,
VGE=15V, IC=60A VGE=15V, IC=60A
TC=25°C TC=25°C
Switching Time (ns)
Switching Time (ns)

100 1000

10 100

Tdon (nS) Tdoff (nS)

Tr (ns) Tf (ns)
1 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance - RG(Ω) Gate Resistance - RG(Ω)

Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn-on Characteristic vs. Collector Current
10 1000
Common Emitter Common Emitter
VCC=400V, VCC=400V,
VGE=15V, IC=60A VGE=15V, Rg=10Ω
Switching Loss - E(mJ)

TC=25°C TC=25°C
Switching Time (ns)

5
100

10

Eon(mJ) Tdon (nS)

Eoff(mJ) Tr (ns)
1 1
0 10 20 30 40 50 0 30 60 90 120
Gate Resistance - RG(Ω) Collector Current - IC(A)

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Figure 13. Turn-off Characteristic vs. Collector Current Figure 14. Switching Loss vs. Collector Current
1000 100
Common Emitter Common Emitter
VCC=400V, VCC=400V,
VGE=15V, Rg=10Ω VGE=15V, Rg=10Ω
TC=25°C TC=25°C

Switching Loss (mJ)

Switching Time (ns)

10

100

Tdoff (nS) Eon(mJ)

Tf (ns) Eoff(mJ)
10 0.1
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector Current - IC(A) Collector Current - IC(A)

Figure 15. Forward Characteristic Figure 16. Reverse Recovery Time vs. Forward Current
100 45
Reverse Recovery Time - Trr(ns)
Forward Current - IFM(A)

40

10

35

TC=125°C di/dt=100A/µs
TC=25°C di/dt=200A/µs
1 30
0 0.5 1 1.5 2 2.5 10 20 30 40 50 60
Forward Voltage - VFM(V) Forward Current - IF(A)

Figure 17. Reverse Recovery Charge vs. Forward Current Figure 18. Max. Safe Operating Area
100 103
Reverse Recovery Charge - Qrr(nC)

80
Collector Current - ICE(A)

102
0.1ms
1ms
60 10ms
DC
101 100ms

40

100
20
di/dt=100A/µs
di/dt=200A/µs
0 10-1
10 20 30 40 50 60 100 101 102 103
Forward Current - IF(A) Collector-Emitter Voltage - VCE(V)

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Figure 19. Square Wave Impedance Simulation (IGBT) Figure 20. Square Wave Impedance Simulation (FRD)
101 101

Normalized Peak Power Impedance

Normalized Peak Power Impedance

100 70% 100 70%

50% 50%
30% 30%

10%
10-1 10-1
10%

5%
5%

2%
2%
1%
1%
0.5%
10-2 0.2% 10-2 0.5%
0.2%

10-3 10-3
10-6 10 -5
10 -4
10 -3
10 -2
10 -1
10 0
-2
10-6 10-5 10-4 10-3 10 10
-1
100 101 102
On-pulse Duration(Sec) On-pulse Duration(Sec)

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
PACKAGE OUTLINE

TO-3P Unit: mm

D A

MILLIMETER
F2 c1 SYMBOL
MIN NOM MAX
__
A 4.4 5.2
__
C1 1.2 1.8
__
A1 1.2 2.0
L2

b 0.7 1.0 1.3

L1

b1 2.7 3.0 3.3

b2 1.7 2.0 2.3
D 15.0 15.5 16.0
L

C 0.4 0.6 0.8

A1 __
b1 F2 8.5 10.0
e 5.45 TYP
b2 b __
L1 22.6 23.6
L 39.0 __ 41.5
__
L2 19.5 21.0

e c

TO-247-3L Unit: mm

E A
A2
Q

MILLIMETER
SYMBOL
MIN NOM MAX
E2

A 4.80 5.00 5.20

A1 2.21 2.41 2.59
D

A2 1.85 2.00 2.15

b 1.11 _ 1.36
_
b2 1.91 2.25
_
b4 2.91 3.25
_
c 0.51 0.75
L1

D 20.80 21.00 21.30

E 15.50 15.80 16.10

E2 4.40 5.00 5.20
L

e 5.44 BSC

L 19.72 19.92 20.22

_ _
L1 4.30

Q 5.60 5.80 6.00

b2 C
b A1
b4
e

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
PACKAGE OUTLINE(CONTINUED)

TO-247S-3L Unit: mm

A
E

MILLIMETER
SYMBOL

D3
ØP MIN NOM MAX
A 4.80 5.00 5.20

C3
C2
A1 2.30 2.50 2.70
b 1.10 1.20 1.30

D b1 2.90 3.10 3.30

b2 1.90 2.10 2.30
c2 5.50 6.00 6.50
c3 4.95 5.10 5.25
D 19.00 20.00 21.00
D3 5.30 5.50 5.70
b2
L2

A1 e 5.34 5.44 5.54

E 15.40 15.60 15.80
b1 L1 14.40 14.60 14.80
L1

L2 3.85 4.00 4.15

b L3 0.35 0.50 0.65
L3
ØP 3.40 3.60 3.80

e e

TO-3PN Unit: mm

B
A
B1
A1

MILLIMETER
SYMBOL
MIN NOM MAX
A 4.60 4.80 5.00
ΦP A1 1.30 1.50 1.70
A2 2.20 2.40 2.60
D

b 0.80 1.00 1.20

b1 1.80 2.00 2.20
b2 2.90 3.10 3.30
B 15.20 15.60 16.00
G

B1 9.10 9.30 9.50

A2
b1
c 0.50 0.60 0.70
b2
D 18.30 18.50 18.70
D1

D1 19.00 19.50 20.00

e 5.25 5.45 5.65
b
G 2.80 3.00 3.20
c
P 3.00 3.20 3.40
e
4.6～5.0

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Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet
Important notice :
 The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing
orders and should verify that such information is complete and current.
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Part No.: SGT60N60FD1PN/P7/PS/PT Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.7
Revision History:
1. Add package outline of TO-3PN
Rev.: 1.6
Revision History:
1. Add package outline of TO-247S-3L
Rev.: 1.5
Revision History:
1. Modify Package stereogram and Important notice
Rev.: 1.4
Revision History:
1. Update the package outline of TO-247-3L
Rev.: 1.3
Revision History:
1. Modify the Max Value of Junction Temperature
Rev.: 1.2
Revision History:
1. Modify annotation of Fig.13
Rev.: 1.1
Revision History:
1. Modify the characteristics
Rev.: 1.0
Revision History:
1. First release

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