SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE
BJ:K BJJKU BCJK ;YJK: O ZAA I E'+[)'1' >+,1% 72& *20()0121- 24%&+()20G
B B ;YIB O SMA I E-)0F ?@A¥ C:3¥ Y* O ]P ^3G
_AA MAA :`Y SMARAMa
]AA @AA :`Y SMARA@a
?PAA ?SAA :`Y SMAR?Sa
?_AA ?MAA :`Y SMAR?Ma
?VAA ?ZAA :`Y SMAR?Za
?]AA ?@AA :`Y SMAR?@a
Symbol Conditions Values Units
Capsule Thyristor ;YIB -)0F ?@A¥ Y* O ?AA E@_G ^3¥ SAM ES@S G I
;C S [ b@R?@A¥ Y+ O M_ ^3¥ cS R cZ SV_ R P]A I
S [ b@R?@AX¥ Y+ O P_ ^3¥ cS R cZ _MA RV_A I
Line Thyristor ;JK: S [ b@R?@A¥ Y+ O M_ ^3¥ T?3 PAA I
;Y:K Y>d O S_ ^3¥ ?A '- _AAA I
Y>d O ?S_ ^3¥ ?A '- M_AA I
)e( Y>d O S_ ^3¥ @UP FFF ?A '- ?S_AAA Ie-
SKT 240
Y>d O ?S_ ^3¥ @UP FFF ?A '- ?A?AAA Ie-
BY Y>d O S_ ^3¥ ;Y O ?AAA I '+[F SUP B
BYEY<G Y>d O ?S_ ^3 '+[F ? B
&Y Y>d O ?S_ ^3 '+[F ?UM 'Q
;CC¥ ;JC Y>d O ?S_ ^3¥ BJC O BJJK¥ BCC O BCJK '+[F MA 'I
(68 Y>d O S_ ^3¥ ;f O ? I¥ 8)fR8( O ? IRg- ? g-
Features (6& BC O AUZV h BCJK S g-
# $%&'%()* '%(+, *+-% .)(/ *%&+')* E8)R8(G*& Y>d O ?S_ ^3 '+[F ?S_ IRg-
)0-1,+(2& E8>R8(G*& Y>d O ?S_ ^3 '+[F ?AAA BRg-
# 3+4-1,% 4+*5+6% 72& 8219,% (i Y>d O ?S_ ^3 U _A FFF ?_A g-
-)8%8 *22,)06 ;$ Y>d O S_ ^3¥ (H4F R '+[F ?_A R MAA 'I
# :/+,,2. 8%-)60 .)(/ -)06,% -)8%8 ;j Y>d O S_ ^3¥ (H4F R '+[F PAA R ?AAA 'I
*22,)06 BfY Y>d O S_ ^3¥ 8F*F ')0F S B
# ;0(%&0+()20+, -(+08+&8 *+-% ;fY Y>d O S_ ^3¥ 8F*F ')0F ?_A 'I
# <77=-(+(% +08 &%>%&-% >2,(+6%- 14 BfC Y>d O ?S_ ^3¥ 8F*F '+[F AUS_ B
(2?@AA B ;fC Y>d O ?S_ ^3¥ 8F*F '+[F ?A 'I
J(/Ed=*G *20(F¥ C:3 AUAV `RT
Typical Applications* J(/Ed=*G -)0F ?@A¥ C:3 R ::3 AUAVS R AU?_? `RT
# C3 '2(2& *20(&2, J(/Ed=*G &%*F ?SA¥ C:3 R ::3 AUA@ R AU?Z@ `RT
E%F 6F 72& '+*/)0% (22,-G J(/E*=-G C:3 R ::3 AUAS R AUAM `RT
# 320(&2,,%8 &%*()7)%&- Y>d = MA FFF k ?S_ ^3
E%F 6F 72& 9+((%&H */+&6)06G Y-(6 = MA FFF k ?PA ^3
# I3 *20(&2,,%&- B)-2, = Bl
E%F 6F 72& (%'4%&+(1&% *20(&2,G X '210()06 72&*% M FFF _ 5m
# J%*2''%08%8 -0199%& 0%(.2&5 + 'R-e
%F 6F 72& BBJK: L MAA BN ' +44&2[F __ 6
J O PP QRPS TU 3 O AUMV WX 3+-% c@
SKT
1 16-02-2009 MAY © by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation vs. on-state current Fig. 1R Power dissipation vs. ambient temperature
Fig. 2L Rated on-state current vs. case temperature Fig. 2R Rated on-state current vs. case temperature
Fig. 3 Recovered charge vs. current decrease Fig. 4 Transient thermal impedance vs. time
2 16-02-2009 MAY © by SEMIKRON
SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state characteristics
Fig. 7 Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time
3 16-02-2009 MAY © by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
$`Rf+(% ,%+8-N -%4+&+(%,H
;C=m2FNPP]A?S_A +>+),+9,%
E?S4*- %+*/G
3+-% c @ EnaCa3N Y<=SAAIcG
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
4 16-02-2009 MAY © by SEMIKRON
SKT 240 THYRISTOR BRIDGE,SCR,BRIDGE
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
5 16-02-2009 MAY © by SEMIKRON
