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NTE5380 Silicon Controlled Rectifier (SCR) For High Speed Switching, 600V, 400 Amp, TO200AB

This document provides specifications for an NTE5380 silicon controlled rectifier (SCR) intended for high speed switching of up to 600V and 400A. The SCR has maximum voltage and current ratings of 800V and 4900A respectively. It also lists electrical characteristics including threshold voltages, conduction resistance, switching times and triggering requirements. Physical dimensions of the TO-200 package are provided.

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0% found this document useful (0 votes)
104 views2 pages

NTE5380 Silicon Controlled Rectifier (SCR) For High Speed Switching, 600V, 400 Amp, TO200AB

This document provides specifications for an NTE5380 silicon controlled rectifier (SCR) intended for high speed switching of up to 600V and 400A. The SCR has maximum voltage and current ratings of 800V and 4900A respectively. It also lists electrical characteristics including threshold voltages, conduction resistance, switching times and triggering requirements. Physical dimensions of the TO-200 package are provided.

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L o
Copyright
© © All Rights Reserved
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NTE5380

Silicon Controlled Rectifier (SCR)


for High Speed Switching,
600V, 400 Amp, TO200AB
Absolute Maximum Ratings:
Maximum Repetitive Peak Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Maximum Non−Repetitive Peak Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Repetitive Peak Off−State Current (TJ = +125°C), IDRM, IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Maximum Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Maximum Thermal Resistance, Junction−to−Heatsink, RthJHS
DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.17K/W
DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W
Maximum Thermal Resistance, Case−to−Heatsink, RthCHS
DC Operation Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.033K/W
DC Operation Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.017K/W
Mounting Torque (±10%), F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4900N (500Kg)

Electrical Characteristics:
Parameter Symbol Test Conditions Rating Unit
On−State Conduction
Max. Average On−State Current IT(AV) 180° Conduction, Single Side Cooled, +85°C 130 A
at Heatsink Temperature Half Sine Wave
Double Side Cooled, +55°C 370 A
Max. RMS On−State Current IT(RMS) DC @ +25°C Heatsink Temperature, Double Side Cooled 690 A
Max. Peak, One Half Cycle, ITSM t = 10ms No Voltage Sinusoidal Half Wave, 4900 A
Non−Repetitive Surge Reapplied Initial TJ = +125°C
Current t = 8.3ms 5130 A
t = 10ms 100% VRRM 4120 A
Reapplied
t = 8.3ms 4310 A
Max. I2t for Fusing I2t t = 10ms No Voltage Sinusoidal Half Wave, 120 KA2s
Reapplied Initial TJ = +125°C
t = 8.3ms 110 KA2s
t = 10ms 100% VRRM 85 KA2s
Reapplied
t = 8.3ms 78 KA2s
Max. Peak On−State Voltage VTM ITM = 600V, TJ = +125°C, tp = 10ms Sine Wave Pulse 1.8 V
Threshold Voltage, Low Level VT(TO)1 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = +125°C 1.40 V
Threshold Voltage, High Level VT(TO)2 (I > π x IT(AV)), TJ = +125°C 1.45 V
Electrical Characteristics (Cont’d):
Parameter Symbol Test Conditions Rating Unit
On−State Conduction (Cont’d)
Forward Slope Resistance, rt1 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = +125°C 0.67 mΩ
Low Level
Forward Slope Resistance, rt2 (I > π x IT(AV)), TJ = +125°C 0.58 mΩ
High Level
Maximum Holding Current IH TJ = +25°C, IT > 30A 600 mA
Typical Latching Current IL TJ = +25°C, VA = 12V, Ra = 6Ω, IG = 1A 1000 mA
Switching
Max. Non−Repetitive Rate of di/dt TJ = +125°C, VDRM = 600V, ITM = 2 x di/dt 1000 A/μs
Rise of Turned−On Current
Typical Delay Time td TJ = +125°C, VDRM = 600V, ITM = 50A DC, tp = 1μs, 1.1 μs
Resistive Load, gate Pulse: 10V, 5Ω Source
Max. Turn−Off Time tp TJ = +125°C, ITM = 30A, Commutating di/dt = 20A/μs, 10 − 20 μs
VR = 50V, tp = 500μs, dv/dt = 500V/μs
Blocking
Maximum Critical Rate of Rise dv/dt TJ = +125°C, Linear to 80% VDRM 500 V/μs
of Off−State Voltage
Max. Peak Reverse and IRRM, TJ = +125°C, VDRM/VRRM Applied 40 mA
Off−State Leakage Current IDRM
Triggering
Maximum Peak Gate Power PGM TJ = +125°C, f = 50Hz, d% = 50 60 W
Maximum Average Gate Power PG(AV) 10 W
Max. Peak Positive Gate Current IGM TJ = +125°C, tp ≤ 5ms 10 A
Max. Peak Positive Gate Voltage +VGM TJ = +125°C, tp ≤ 5ms 20 V
Max. Peak Negative Gate Voltage −VGM 5 V
Max. DC Gate Current Required IGT TJ = +25°C, VA = 12V, Ra = 6Ω 150 mA
to Trigger
Max. DC Gate Voltage Required VGT TJ = +25°C, VA = 12V, Ra = 6Ω 3 V
to Trigger
Max. DC Gate Current not to IGD TJ = +125°C, Rated VDRM Applied 20 mA
Trigger
Max. DC Gate Voltage not to VGD TJ = +125°C, Rated VDRM Applied 0.25 V
Trigger

.145 (3.7) Dia Max

8.500 (21.59)
1.650 Max
(41.91)
Max For No. 6
Screws

.755 Cathode
.030 (.762) Min (19.18) Cathode Potential (Red)
.560 Max
(14.22)

Gate (White)
1.650 Marking
.030 (.762) Min (41.91) Anode
Max

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