NTE5552−I, NTE5554−I,

NTE5556−I, NTE5558−I
Silicon Controlled Rectifier (SCR)
25 Amp, TO220AB
Isolated Tab
Description:
The NTE5552−I thru NTE5558−I are 25 Amp SCR’s designed primarily for half−wave AC control
applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition,
voltage regulation, and welding equipment.

Features:
D Suitable for General Purpose AC Switching
D IGT 40mA Max.
D Isolated Tab
Absolute Maximum Ratings: (TA = +25_C unless otherwise specified)
Repetitive Peak Off−State Voltage, VDRM
NTE5552−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5554−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Reverse Blocking Voltage, VRRM
NTE5552−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5554−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Maximum Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On−State Current (Full Sine Wave, TC = +75_C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Average On−State Current (TC = +75_C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non−Repetitive Surge Peak On−State Current (Full Cycle, TJ Initial = +25_C), ITSM
F = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320A
F = 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A
I t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510A2s
2
Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125_C), di/dt
NTE5552−I, NTE5554−I, NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/ms
NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ms
Forward Peak Gate Current (tp = 20ms, TJ = +125_C), IGM
NTE5552−I, NTE5554−I, NTE5556−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
NTE5558−I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Average Gate Power Dissipation (TJ = +125_C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500VRMS
Rev. 5−14
Absolute Maximum Ratings (Cont’d): (TA = +25_C unless otherwise specified)
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40_ to +125_C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40_ to +150_C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9_C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60_C/W
Electrical Characteristics: (TC = +25_C unless otherwise noted.)
Parameter Symbol Min Typ Max Unit
Gate Trigger Current (VD = 12V, RL = 30W) IGT − − 40 mA
Gate Trigger Voltage (VD = 12V, RL = 30W) VGT − − 1.3 V
Gate Non−Trigger Voltage VGD 0.2 − − V
(VD = Rated VDRM, RL =3.3kW, TJ = +125_C)
Holding Current (IT = 500mA, Gate Open) IH − − 50 mA
Latching Current (IG = 1.2 IGT) IL − − 90 mA
Critical Rate of Rise of Off−State Voltage dv/dt 1000 − − V/ms
(VD = 67% VDRM, Gate Open, TJ = +125_C)
Forward “ON” Voltage
NTE5558−I (ITM = 32A, tp = 380ms, TJ = +25_C) VTM − − 1.6 V
All Other Devices (ITM = 50A, tp = 380ms, TJ = +25_C) − − 1.6 V
Peak Forward or Reverse Blocking Current, IDRM, IRRM
(Rated VDRM or VRRM) TJ = +25_C − − 5 mA
TJ = +125_C − − 4 mA

.052 (1.32)
Max
.408 (10.36) .190 (4.83)
Max Max

.108
(2.74)

Isol
.153 (3.89)
Dia Max .512
.127 (13.0)
(3.23) Max
Max

.503
(12.78)
Min
.037 (0.94)
Max
Cathode Gate
.100 (2.54) Anode