NTE56040 & NTE56041

TRIAC, 4A Sensitive Gate

Description:
The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package
designed for use in general purpose bidirectional switching and phase control applications, where
high sensitivity is required in all four quadrants.

Absolute Maximum Ratings:

Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56041 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, TMB ≤ 107°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the On–State. The rate–of–rise of current should not exceed
3A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Gate Trigger Current
MT2 (+), G (+) IGT VD = 12V, IT = 0.1A – 2.5 10 mA
MT2 (+), G (–) – 4.0 10 mA
MT2 (–), G (–) – 5.0 10 mA
MT2 (–), G (+) – 11 25 mA
Latching Current
MT2 (+), G (+) IL VD = 12V, IT = 0.1A – 3.0 15 mA
MT2 (+), G (–) – 10 20 mA
MT2 (–), G (–) – 2.5 15 mA
MT2 (–), G (+) – 4.0 20 mA
Holding Current IH VD = 12V, IT = 0.1A – 2.2 15 mA
On–State Voltage VT IT = 5A – 1.4 1.7 V
Gate Trigger Voltage VGT VD = 12V, IT = 0.1A – 0.7 1.5 V
VD = 400V, IT = 0.1A, TJ = +125°C 0.25 0.4 – V
Off–State Leakage Current ID VD = VDRMmax, TJ = +125°C – 0.1 0.5 mA
Dynamic Characteristics
Critical Rate–of–Rise of dVD/dt VDM = 67% VDRMmax, TJ = +125°C, – 50 – V/µs
Off–State Voltage Exponential Waveform, Gate Open
Gate Controlled Turn–On Time tgt ITM = 6A, VD = VDRMmax, IG = 0.1A, – 2 – µs
dIG/dt = 5A/µs

.420 (10.67)
Max

.110 (2.79)

MT2
.147 (3.75) .500
Dia Max (12.7)
Max

.250 (6.35)
Max

.500
(12.7)
Min
.070 (1.78) Max

MT1 Gate
.100 (2.54) MT2