BD909/911

® BD910/912

COMPLEMENTARY SILICON POWER TRANSISTORS

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SALESTYPES

DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and 3
BD912 respectively. 2
1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
V CBO Collector-Base Voltage (I E = 0) 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 80 100 V
VEBO Emitter-Base Voltage (I C = 0) 5 V
I E ,IC Collector Current 15 A
IB Base Current 5 A
P tot Total Dissipation at T c ≤ 25 C o
90 W
o
Tstg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.

October 1999 1/6

BD909 / BD910 / BD911 / BD912

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.4 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off for BD909/910 V CB = 80 V 500 µA
Current (I E = 0) for BD911/912 V CB = 100 V 500 µA
T case = 150 o C
for BD909/910 V CB = 80 V 5 mA
for BD911/912 V CB = 100 V 5 mA
I CEO Collector Cut-off for BD909/910 V CE = 40 V 1 mA
Current (I B = 0) for BD911/912 V CE = 50 V 1 mA
IEBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) ∗ Collector-Emitter I C = 100 mA for BD909/910 80 V
Sustaining Voltage for BD911/912 100 V
(I B = 0)
VCE(sat) ∗ Collector-Emitter IC = 5 A I B = 0.5 A 1 V
Saturation Voltage I C = 10 A I B = 2.5 A 3 V
V BE(sat) ∗ Base-Emitter I C = 10 A I B = 2.5 A 2.5 V
Saturation Voltage
V BE ∗ Base-Emitter Voltage IC = 5 A V CE = 4 V 1.5 V
h FE ∗ DC Current Gain I C = 0.5 A V CE = 4 V 40 250
IC = 5 A V CE = 4 V 15 150
I C = 10 A V CE = 4 V 5
fT Transition frequency I C = 0.5 A V CE = 4 V 3 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.

Safe Operating Area Derating Curves

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 BD909 / BD910 / BD911 / BD912

DC Current Gain (NPN type) DC Current Gain (PNP type)

DC Transconductance (NPN type) DC Transconductance (PNP type)

Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type)

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BD909 / BD910 / BD911 / BD912

Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type)

Transition Frequency (NPN type) Transition Frequency (PNP type)

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 BD909 / BD910 / BD911 / BD912

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151

P011C

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BD909 / BD910 / BD911 / BD912

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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