BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT 3
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DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington TO-220
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Un it
NPN BDW93C
PNP BDW94B BDW94C
V CBO Collector-Base Voltage (IE = 0) 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 80 100 V
IC Collector Current 12 A
ICM Collector Peak Current 15 A
IB Base Current 0.2 A
P tot T otal Dissipation at Tc ≤ 25 C o
80 W
o
Ts tg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.
October 1999 1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
o
R thj -case Thermal Resistance Junction-case 1.56 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
I CBO Collector Cut-off for BDW94B V CB = 80 V 100 µA
Current (IE = 0) for BDW93C/94C VCB = 100 V 100 µA
T case = 150 o C
for BDW94B V CB = 80 V 5 mA
for BDW93C/94C VCB = 100 V 5 mA
I CEO Collector Cut-off for BDW94B V CE = 80 V 1 mA
Current (IB = 0) for BDW93C/94C VCE = 100 V 1 mA
IEBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(s us) ∗ Collector-Emitt er I C = 100 mA
Sustaining Voltage for BDW94B 80 V
(I B = 0) for BDW 93C/94C 100 V
V CE(sat) ∗ Collector-Emitt er IC = 5 A I B = 20 mA 2 V
Saturation Voltage I C = 10 A I B = 100 mA 3 V
V BE(sat) ∗ Base-Emitter IC = 5 A I B = 20 mA 2.5 V
Saturation Voltage I C = 10 A I B = 100 mA 4 V
h FE∗ DC Current G ain IC = 3 A V CE = 3 V 1000
IC = 5 A V CE = 3 V 750 20K
I C = 10 A V CE = 3 V 100
VF * Parallel-diode Forward IF = 5 A 1.3 2 V
Voltage I F = 10 A 1.8 4 V
h fe Small Signal Current IC = 1 A V CE = 10 V
Gain f = 1 MHz 20
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
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BDW93C/BDW94B/BDW94C
Safe Operating Area DC Current Gain (NPN types)
Collector Emitter Saturation Voltage (NPN types) DC Transconductance(NPN types)
Collector Emitter Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types)
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BDW93C/BDW94B/BDW94C
Saturated Switching Characteristics (NPN types) Saturated Switching Characteristics (PNP types)
Collector Emitter Saturation Voltage (PNP types) DC Current Gain (PNP types)
DC Transconductance(PNP types)
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BDW93C/BDW94B/BDW94C
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
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BDW93C/BDW94B/BDW94C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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