A115x Datasheet
A115x Datasheet
0.1 µF
V+ VCC
Regulator
To all subcircuits
LH & UA Clock/Logic
package
only 0.01 µF Low-Pass Schmitt
Sample and Hold
Dynamic Offset
Filter Trigger
Cancellation
Amp Polarity
GND GND
UA package only
Selection Guide
Output (ICC) in Supply Current Magnetic Operate
Part Number Packing Package South Polarity at ICC(L) Point, BOP
Field (mA) (G)
A1150LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
Low 2 to 5
A1150LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole
A1152LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1152LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole Low 5 to 6.9
50 to 110
A1152LUBTN-T 13-in. reel, 4 000 pieces/reel 2-pin SIP through hole
A1153LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1153LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole High 5 to 6.9
A1153LUBTN-T 13-in. reel, 4 000 pieces/reel 2-pin SIP through hole
A1155LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1155LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole Low 5 to 6.9
A1155LUBTN-T 13-in. reel, 4 000 pieces/reel 2-pin SIP through hole
20 to 60
A1156LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1156LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole High 5 to 6.9
A1156LUBTN-T 13-in. reel, 4 000 pieces/reel 2-pin SIP through hole
A1157LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1157LLHLT-T 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount Low
A1157LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole
2 to 5 20 to 80
A1158LLHLX-T 13-in. reel, 10 000 pieces/reel 3-pin SOT23W surface mount
A1158LLHLT-T 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount High
A1158LUA-T Bulk, 500 pieces/bag 3-pin SIP through hole
SPECIFICATIONS
NC
1 VCC VCC Input power supply
1 2 LH package: no connection,
1 2 3 it is highly recommended that
2 NC GND this pin be tied to GND
1 2
UB Package
ELECTRICAL CHARACTERISTICS: valid at TA = –40°C to 150°C, TJ < TJ(max), CBYP = 0.01 µF, through operating supply
voltage range, unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage1,2 VCC Operating, TJ ≤ 165 °C 3.0 – 24 V
A1150, A1157 B > BOP
2.0 – 5.0 mA
A1158 B < BRP
ICC(L)
A1152, A1155 B > BOP
5 – 6.9 mA
Supply Current A1153, A1156 B < BRP
A1150, A1152,
B < BRP
A1155, A1157
ICC(H) 12 – 17 mA
A1153, A1156,
B > BOP
A1158
Supply Zener Clamp Voltage VZ(sup) ICC(L)(max) + 3 mA, TA = 25°C 28 – – V
ICC(L)(max)
Supply Zener Clamp Current IZ(sup) VZ(sup) = 28 V – – mA
+ 3 mA
Reverse Supply Current IRCC VRCC = –18 V – – –1.6 mA
LH
No bypass capacitor, capacitance of
and – 90 – mA / µs
probe CS = 20 pF
Output Slew Rate3 di/dt UA
Integrated bypass capacitor,
UB – 0.22 – mA / µs
capacitance of probe CS = 20 pF
Chopping Frequency fc – 700 – kHz
A1150, A1152, B > BOP + 10 G
A1155, A1157
Power-Up Time4,5 ton – – 25 µs
A1153, A1156,
B < BRP – 10 G
A1158
Power-Up State2,4,6,7 POS ton < ton(max) , VCC slew rate > 25 mV / µs – ICC(H) – –
1V
CC represents the generated voltage between the VCC pin and the GND pin.
2The V
CC slew rate must exceed 600 mV/ms from 0 to 3 V. A slower slew rate through this range can affect device performance.
3Measured without bypass capacitor between VCC and GND. Use of a bypass capacitor results in slower current change.
4Power-Up Time is measured without and with bypass capacitor of 0.01 µF. Adding a larger bypass capacitor would cause longer Power-Up Time.
5Guaranteed by characterization and design.
6Power-Up State as defined is true only with a V
CC slew rate of 25 mV / µs or greater.
7For t > t
on and BRP < B < BOP , Power-Up State is not defined.
MAGNETIC CHARACTERISTICS1: Valid at TA = –40°C to 150°C, TJ < TJ (max), unless otherwise noted
Characteristics Symbol Min. Typ. Max. Unit2
A1150, A1152, A1153 50 – 110 G
Magnetic Operating Point BOP A1155, A1156 20 – 60 G
A1157, A1158 20 – 80 G
A1150, A1152, A1153 45 – 105 G
Magnetic Release Point BRP A1155, A1156 10 – 55 G
A1157, A1158 10 – 60 G
Hysteresis BHYS 5 – 30 G
1Relative values of B use the algebraic convention, where positive values indicate south magnetic polarity, and negative values indicate north magnetic polarity; therefore
greater B values indicate a stronger south polarity field (or a weaker north polarity field, if present).
21 G (gauss) = 0.1 mT (millitesla).
THERMAL CHARACTERISTICS: may require derating at maximum conditions; see application information
Characteristic Symbol Test Conditions* Value Unit
Package LH, on 1-layer PCB with copper limited to solder pads 228 ºC/W
Package LH, on 2-layer PCB with 0.463 in.2 of copper area each side 110 ºC/W
Package Thermal Resistance RθJA
Package UA, on 1-layer PCB with copper limited to solder pads 165 ºC/W
Package UB, on 1-layer PCB with copper limited to solder pads 213 ºC/W
Power
LH and UADerating Curve Curve
Power Derating UB Power Derating Curve
25
24 VCC(max)
23
22
Maximum Allowable VCC (V)
21
20
19
18
17
16
15
14
13
12
2-layer PCB, Package LH
11 (RθJA = 110 ºC/W)
10
9 1-layer PCB, Package UA
8 (RθJA = 165 ºC/W)
7
6 1-layer PCB, Package LH
5 (RθJA = 228 ºC/W)
4 VCC(min)
3
2
20 40 60 80 100 120 140 160 180
Temperature (ºC)
LH and UAPower
PowerDissipation
Dissipationversus
versus Ambient Temperature
Ambient Temperature UB Power Dissipation versus Ambient Temperature
1900
1800
1700
1600
1500
1400
1300
Power Dissipation, PD (m W)
1200 2-
l
1100 (R aye
θJ rP
A = C
1000 11 B, P
1-la 0 º ac
900 y C/ ka
(R er PC W
) ge L
800 θJA = B H
165 , Pac
700 ºC/ k a
W) ge U
600 A
500 1-lay
400 er P
(R CB,
300 θJA =
228 Packag
ºC/W e LH
200 )
100
0
20 40 60 80 100 120 140 160 180
Temperature (°C)
CHARACTERISTIC PERFORMANCE
A1152/A1153/A1155/A1156 A1152/A1153/A1155/A1156
Average Supply Current (Low) versus Temperature Average Supply Current (Low) versus Supply Voltage
7.0 7.0
6.5 6.5
TA = 150°C
VCC = 24 V
TA = –40°C
6.0 6.0
TA = 25°C
VCC = 3.0 V
5.5 5.5
5.0 5.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 2 6 10 14 18 22 26
A1150/A1157/A1158 A1150/A1157/A1158
Average Supply Current (Low) versus Temperature Average Supply Current (Low) versus Supply Voltage
5.0 5.0
Supply Current, ICC(L) (mA)
4.5 4.5
4.0 4.0
VCC = 24 V TA = 150°C
TA = 25°C
3.5 3.5
TA = –40°C
VCC = 3.0 V
3.0 3.0
2.5 2.5
2.0 2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 2 6 10 14 18 22 26
A1150/A1152/A1153/A1155/A1156/A1157/A1158 A1150/A1152/A1153/A1155/A1156/A1157/A1158
Average Supply Current (High) versus Temperature Average Supply Current (High) versus Supply Voltage
17 17
Supply Current, ICC(H) (mA)
Supply Current, ICC(H) (mA)
16 16
VCC = 24 V TA = –40°C
15 15
TA = 150°C
VCC = 3.0 V
TA = 25°C
14 14
13 13
12 12
-60 -40 -20 0 20 40 60 80 100 120 140 160 2 6 10 14 18 22 26
A1150/A1152/A1153 A1155/A1156
Average Operate Point versus Temperature Average Operate Point versus Temperature
110 60
55
100
Operate Point, BOP (G)
Applied Flux Density at
50 20
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
A1150/A1152/A1153 A1155/A1156
Average Release Point versus Temperature Average Release Point versus Temperature
105 55
50
95
Release Point, BRP (G)
Applied Flux Density at
45
Release Point, BRP (G)
Applied Flux Density at
85 40
35
75
VCC = 3.0 V 30 VCC = 3.0 V
65 25 VCC = 24 V
VCC = 24 V
20
55
15
45 10
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
A1150/A1152/A1153
A1150/A1152/A1153/A1155/A1156/A1157/A1158 A1155/A1156
A1150/A1152/A1153/A1155/A1156/A1157/A1158
Average Switchpoint Hysteresis versus Temperature Average Switchpoint Hysteresis versus Temperature
30 30
Switchpoint Hysteresis, BHYS (G)
25 25
20 20
15 15
VCC = 24 V VCC = 3.0 V
5 5
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
FUNCTIONAL DESCRIPTION
The A1150, A1152, A1155, and A1157 output, ICC, switches low field at the Hall sensor IC exceeds the operate point threshold,
after the magnetic field at the Hall sensor IC exceeds the oper- BOP . When the magnetic field is reduced to below the release
ate point threshold, BOP . When the magnetic field is reduced to point threshold, BRP, the device output goes low (panel B).
below the release point threshold, BRP , the device output goes
The difference between the magnetic operate and release points
high. This is shown in Figure 1, panel A.
is called the hysteresis of the device, BHYS . This built-in hyster-
In the case of the reverse output polarity, as in the A1153, A1156, esis allows clean switching of the output even in the presence of
and A1158, the device output switches high after the magnetic external mechanical vibration and electrical noise.
I+ I+
ICC(H) ICC(H)
Switch to High
Switch to High
Switch to Low
Switch to Low
ICC
ICC
ICC(L) ICC(L)
0 0
B– B+ B– B+
BOP
BRP
BOP
BRP
BHYS BHYS
(A) Hysteresis curve for A1150, A1152, A1155, and A1157 (B) Hysteresis curve for A1153, A1156, and A1158
V+ VCC RSENSE
A115x
V+ VCC
CBYP
0.1 µF 0.01 µF A115x
B C
CBYP
GND GND 0.1 µF 0.01 µF
B C
A
GND GND
ECU A Package UA Only
RSENSE A
B Package UB Only
Regulator
Clock/Logic
Low-Pass
Hall Element Filter
Sample and
Hold
Amp
Power Derating
The device must be operated below the maximum junction tem- TJ = TA + ΔT = 25°C + 7°C = 32°C
perature of the device, TJ(max). Under certain combinations of A worst-case estimate, PD(max), represents the maximum allow-
peak conditions, reliable operation may require derating supplied able power level (VCC(max), ICC(max)), without exceeding
power or improving the heat dissipation properties of the appli- TJ(max), at a selected RθJA and TA.
cation. This section presents a procedure for correlating factors
affecting operating TJ. (Thermal data is also available on the Example: Reliability for VCC at TA = 150°C, package UA, using a
Allegro MicroSystems Web site.) low-K PCB.
The Package Thermal Resistance, RθJA, is a figure of merit sum- Observe the worst-case ratings for the device, specifically:
marizing the ability of the application and the device to dissipate RθJA = 165 °C/W, TJ(max) = 165°C, VCC(max) = 24 V, and
heat from the junction (die), through all paths to the ambient air. ICC(max) = 17 mA.
Its primary component is the Effective Thermal Conductivity, K, Calculate the maximum allowable power level, PD(max). First,
of the printed circuit board, including adjacent devices and traces. invert equation 3:
Radiation from the die through the device case, RθJC, is relatively
small component of RθJA. Ambient air temperature, TA, and air ΔTmax = TJ(max) – TA = 165 °C – 150 °C = 15 °C
motion are significant external factors, damped by overmolding.
This provides the allowable increase to TJ resulting from internal
The effect of varying power levels (Power Dissipation, PD), can power dissipation. Then, invert equation 2:
be estimated. The following formulas represent the fundamental
relationships used to estimate TJ, at PD. PD(max) = ΔTmax ÷ RθJA = 15°C ÷ 165 °C/W = 91 mW
Finally, invert equation 1 with respect to voltage:
PD = VIN × IIN (1)
VCC(est) = PD(max) ÷ ICC(max) = 91 mW ÷ 17 mA = 5 V
ΔT = PD × RθJA (2)
TJ = TA + ΔT (3) The result indicates that, at TA, the application and device can
For example, given common conditions such as: TA= 25°C, dissipate adequate amounts of heat at voltages ≤VCC(est).
VCC = 12 V, ICC = 4 mA, and RθJA = 140 °C/W, then: Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-
able operation between VCC(est) and VCC(max) requires enhanced
PD = VCC × ICC = 12 V × 4 mA = 48 mW RθJA. If VCC(est) ≥ VCC(max), then operation between VCC(est)
and VCC(max) is reliable under these conditions.
ΔT = PD × RθJA = 48 mW × 140 °C/W = 7°C
+0.12
2.98 –0.08
D
1.49
4° ±4°
A
3
+0.020
0.180 –0.053
0.96 D
+0.19
+0.10 1.91 –0.06 2.40
2.90 –0.20
0.70
D
1.00
0.25 MIN
1 2
0.55 REF
0.25 BSC 0.95
Seating Plane
Branded Face Gauge Plane B PCB Layout Reference View
8X 10°
REF
1.00 ±0.13
NNN
+0.10
0.05 –0.05
0.95 BSC
0.40 ±0.10 C Standard Branding Reference View
N = Last three digits of device part number
B Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads;
adjust as necessary to meet application process requirements and PCB layout tolerances
45°
+0.08
4.09
–0.05 1.52 ±0.05
E C
2.04
2 X 10°
1.44 E E Mold Ejector
+0.08 Pin Indent
3.02
–0.05
Branded 45°
Face
A
1.02 MAX
0.79 REF
1 2 3
+0.05 +0.03
0.43 0.41
–0.07 –0.06
1.27 NOM
NNN
14.99 ±0.25
+0.06
4.00 –0.05
4 X 10°
1.50 ±0.05
E
2.00 C
1.75 E
Mold Ejector
+0.06 Pin Indent
4.00
–0.07 E
NNN
Branded 45° YYWW
Face LLLL
A
0.85 ±0.07
4 X 2.50 REF 0.25 REF 0.42 ±0.10 D Standard Branding Reference View
0.30 REF
2.54 REF = Supplier emblem
N = Last three digits of device part number
4 X 0.85 REF Y = Last 2 digits of year of manufacture
W = Week of manufacture
L = Lot number
1 2
0.85 ±0.07
+0.06
1.80
–0.07
F
+0.06
4.00 1.50 ±0.05
–0.05
Revision History
Revision Revision Date Description of Revision
7 May 22, 2014 Added UB Package
8 October 2, 2014 Revised UB packge drawing and reformatted document.
9 March 2, 2015 Updated branding info on package drawing
10 September 21, 2015 Corrected LH package Active Area Depth value; added AEC-Q100 qualification under Features and
Benefits
www.allegromicro.com
Allegro MicroSystems, LLC 14
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com