Power Transistors

2SD2375
Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Unit: mm

■ Features 9.9±0.3 4.6±0.2

2.9±0.2
High forward current transfer ratio hFE which has satisfactory

3.0±0.5
●

linearity

15.0±0.5
● Full-pack package which can be installed to the heat sink with φ3.2±0.1

one screw

1.4±0.2
■ Absolute Maximum Ratings

4.2±0.2
2.6±0.1
(TC=25˚C) 1.6±0.2

13.7±0.2
Parameter Symbol Ratings Unit 0.8±0.1 0.55±0.15

Collector to base voltage VCBO 80 V

2.54±0.3
Collector to emitter voltage VCEO 60 V 1 2 3 5.08±0.5

Emitter to base voltage VEBO 6 V

Peak collector current ICP 6 A
1:Base
Collector current IC 3 A 2:Collector
3:Emitter
Base current IB 1 A TO–220D Full Pack Package
Collector power TC=25°C 25
PC W
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 80V, IE = 0 100 µA
Collector cutoff current
ICEO VCE = 40V, IB = 0 100 µA
Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA
Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 V
Forward current transfer ratio hFE * VCE = 4V, IC = 0.5A 500 1500
Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A 1 V
Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz 50 MHz

*h Rank classification
FE

Rank Q P
hFE 500 to 1000 800 to 1500

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

1
Power Transistors 2SD2375

PC — Ta IC — VCE IC — VBE
40 1.0 5
(1) TC=Ta IB=1.0mA TC=25˚C
VCE=5V
Collector power dissipation PC (W)

36 (2) Without heat sink

0.9mA TC=25˚C
(PC=2W)
32 0.8 4
0.8mA

Collector current IC (A)

Collector current IC (A)

28 0.7mA
(1)
0.6mA
24 0.6 3
0.5mA
20
0.4mA
16 0.4 2
0.3mA
12

8 0.2 0.2mA 1

4 (2) 0.1mA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
100 10000 1000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=40 VCE=4V VCE=12V

TC=25˚C TC=25˚C f=10MHz
Forward current transfer ratio hFE

30 3000 300 TC=25˚C

Transition frequency fT (MHz)

10 1000 100

3 300 30

1 100 10

0.3 30 3

0.1 10 1

0.03 3 0.3

0.01 1 0.1
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) — t

100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 80 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

30
102
Collector current IC (A)

10 I (1)
CP
t=1ms
10ms (2)
3 10
IC

1
DC
1
0.3

0.1
10–1
0.03

0.01 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)