Scribd
Upload
189 views1 page

PN3565 Transistor NPN

This document provides specifications for the 2N3565 and PN3565 NPN low level high gain amplifier transistors. Key specifications include: - Maximum power dissipation of 0.2-0.625 watts depending on case temperature - DC current gain of 150-600 and high frequency current gain of 2-12 - Collector saturation voltage of 0.35 volts or less - Collector cutoff current of 50nA or less and 3mA or less at high temperatures - Open circuit output capacitance of 4pF or less - Breakdown voltages of 25-30 volts depending on configuration

Uploaded by

Juliansyah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
189 views1 page

PN3565 Transistor NPN

This document provides specifications for the 2N3565 and PN3565 NPN low level high gain amplifier transistors. Key specifications include: - Maximum power dissipation of 0.2-0.625 watts depending on case temperature - DC current gain of 150-600 and high frequency current gain of 2-12 - Collector saturation voltage of 0.35 volts or less - Collector cutoff current of 50nA or less and 3mA or less at high temperatures - Open circuit output capacitance of 4pF or less - Breakdown voltages of 25-30 volts depending on configuration

Uploaded by

Juliansyah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

na.

20 STERN AVE. TELEPHONE: (973) 378-2023


SPRINQFIELO, NEW JERSEY 07081 (212) 227-8008
U.3A FAX: (973) 376-8060

2N3565•PN3565
NPN LOW LEVEL HIGH GAIN AMPLIFIERS
DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS

PD . . . 625 mW @ TA - 25°C
See Package Outlines
h FE ... 150 -600 @ 1.0mA
• 25 V (MIN) TO18-4 TO92-1

ABSOLUTE MAXIMUM RATINGS (Note 1)


Maximum Temperatures 2N3S6S PN3565
Storage Temperature
Operating Junction Temperature
Lead Temperature
Maximum Power Dissipation (Note 2)
Total Dissipation at 25° C Case Temperature
at 65° C Case Temperature
55°Cto+125°C
125°C
260° C

0.5 W
0.3 W
-55°C to+150°C
150°C
260° C

LOW
I 1 1
1
at 25°C Ambient Temperature 0.2 W 0.625 W EBC E BC
123 123
Maximum Voltages and Current
VCBO Collector to Base Voltage 30 V 30 V
VCEO Collector to Emitter Voltage (Note 3) 25 V 25 V
V|=BQ Emitter to Base Voltage 6.0 V 6.0 V 2N3565 PN3565
IQ Collector Current 50 mA 50 mA

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted)


SYMBOL CHARACTERISTIC MIN. MAX. UNITS TEST CONDITIONS

hFE DC Current Gain 150 600 IC = 1.0 mA, V C £ = 10 V


thFE DC Current Gain 70 ic = 100 MA, V CE = 10 v
hfe High Frequency Current Gain 2.0 12 l c = 1.0 mA, V CE - 5.0 V, f = 20 MHz
tvCE(sat) Collector Saturation Voltage 0.35 V Ic = 1.0 mA, 10 = 0.1 mA
'CBO Collector Cutoff Current 50 nA IE = 0, V C B - 2 5 V
tlcBO Collector Cutoff Current 3.0 HA IE = 0, V CB - 25 V, T A = 65°C
Cob Open Circuit Output Capacitance 4.0 pF IE = °. V CB - 5-0 V, f = 140 kHz
BVCBO Collector to Base Breakdown Voltage 30 V IE = o, ic = 100MA
v CEO(sus) Collector to Emitter Sustaining Voltage 25 V IB = 0, Ic = 2.0mA
BV EBO Emitter to Base Breakdown Voltage 6.0 V ic = o, IE = IO^A
hie Input Resistance 2.0 20 kS2 1C = 1.0mA, VCE = 5.0 V f- 1.0kHz
hoe Output Conductance 0.5 100 Mmhos IQ = 1.0 mA, VCE " 5.0 V , f = 1.0kHz
h fe Small Signal Current Gain 120 750 IC = 1.0 rriA, V C E = 5,0 V, f = 1 .0 kHz

You might also like