BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

• LOW NOISE: BC239 TO-92

ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Characteristic Symbol Rating Unit

Collector-Emitter Voltage VCES V

: BC237 50 V
: BC238/239 30
Collector-Emitter Voltage VCEO
: BC237 45 V
: BC238/239 25 V
Emitter-Base Voltage VEBO
: BC237 6 V
: BC238/239 5 V
Collector Current (DC) IC 100 mA
Collector Dissipation PC 500 mW
Junction Temperature TJ 150 °C
Storage Temperature T STG -55 ~ 150 °C
1. Collector 2. Base 3. Emitter

ELECTRICAL CHARACTERISTICS (TA=25°°C)

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0

:BC237 45 V
: BC238/239 25 V
Emitter Base Breakdown Voltage BVEBO IE=1µA, IC=0
: BC237 6 V
: BC238/239 5 V
Collector Cut-off Current ICES
: BC237 VCE=50V, IB=0 0.2 15 nA
: BC238/239 VCE=30V, IB=0 0.2 15 nA
DC Current Gain hFE VCE=5V, IC=2mA 120 800
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=0.5mA 0.07 0.2 V
IC=100mA, IB=5mA 0.2 0.6 V
Collector Base Saturation Voltage VBE (sat) IC=10mA, IB=0.5mA 0.73 0.83 V
IC=100mA, IB=5mA 0.87 1.05 V
Base Emitter On Voltage VBE (on) VCE=5V, IC=2mA 0.55 0.62 0.7 V
Current Gain Bandwidth Product fT VCE=3V, IC=0.5mA 85 MHz

VCE=5V, IC=10mA 150 250 MHz

Collector Base Capacitance CCBO VCB=10V, f=1MHz 3.5 6 pF

Emitter Base Capacitance CEBO VEB=0.5V, f=1MHz 8 pF
Noise Figure : BC237/238 NF VCE=5V, IC=0.2mA, 2 10 dB
: BC239 f=1KHz RG=2kohm 4 dB
: BC239 NF VCE=5V, IC=0.2mA 4 dB
RG=2kohm, f=30~15KHz

hFE CLASSIFICATION
Classification A B C

hFE 120-220 180-460 380-800

Rev. B

1999 Fairchild Semiconductor Corporation

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR
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Definition of Terms

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In Design product development. Specifications may change in
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