BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/638/640 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector Emitter Voltage : BC635 VCER 45 V
at RBE=1Kohm : BC637 60 V
: BC639 100 V
Collector Emitter Voltage : BC635 VCES 45 V
: BC637 60 V
: BC639 100 V
Collector Emitter Voltage : BC635 VCEO 45 V
: BC637 60 V
: BC639 80 V
Emitter Base Voltage VEBO 5 V
Collector Current IC 1 A
Peak Collector Current ICP 1.5 A
Base Current IB 100 mA
Collector Dissipation PC 1 W
Junction Temperature TJ 150 °C 1. Emitter 2. Collector 3. Base
Storage Temperature T STG -65 ~ 150 °C
• PW=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0
: BC635 45 V
: BC736 60 V
: BC639 80 V
Collector Cut-off Current ICBO VCB=30V, IE=0 0.1 µA
Emitter Cut-off Current IEBO VEB=5V, IC=0 0.1 µA
DC Current Gain hFE VCE=2V, IC=5mA 25
:BC635 VCE=2V, IC=150mA 40 250
: BC637/BC639 40 160
VCE=2V, IC=500mA 25
Collector Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.5 V
Base Emitter On Voltage VBE(on) VCE=2V, IC=500mA 1 V
Current Gain Bandwidth Product fT VCE=5V, IC=10mA, f=50MHz 100 MHz
Rev. B
1999 Fairchild Semiconductor Corporation
BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR
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CoolFET™ MICROWIRE™
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E2CMOSTM PowerTrench™
FACT™ QS™
FACT Quiet Series™ Quiet Series™
FAST® SuperSOT™-3
FASTr™ SuperSOT™-6
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HiSeC™ TinyLogic™
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
