- Conductor , (inc..
20 STERN AVE. TELEPHONE: (201) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (201) 376-8960
BFX89
BFY90
WIDE BAND VHF/UHF AMPLIFIER
, SILICON PLANAR EPITAXIAL TRANSISTORS
, TO-72 METAL CASE
, VERY LOW NOISE
APPLICATIONS :
t TELECOMMUNICATIONS
, WIDE BAND UHF AMPLIFIER
, RADIO COMMUNICATIONS
TO-72
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The BFXS9 and BFY90 are silicon planar epitaxial
NPN transistors produced using interdigitated base
emitter geometry. They are particulary designed for
use in wide band common-emitter linear amplifiers
up to 1 GHz. They feature very high fr, low reverse
capacitance, excellent cross modulation properties
and very low noise performance. The BFY90 is com-
plementary to the BFR99A. Typical applications in-
clude telecommunication and radio communication
equipment.
ABSOLUTE MAXIMUM RATINGS
JSymboiJ Parameter Value Unit
-j^Boi Collector-base Voltage (I6 = 0) 30 V
_V«R_ Collector-emitter Voltage (RBE £ 50 Q) 30 V
^£EO__ Collector-emitter Voltage (Is - 0) 15 V
^B0__ Emitter-base Voltage (Ic = 0) 2.5 V
— _|c___ Collector Current 25 mA
—i«__ Collector Peak Current (f a 1 MHz) 50 mA
—!il__ Total Power Dissipation at T,mb z 25 °C 200 mW
-Ins/H Storage and Junction Temperature - 65 to 200 °C
Quality Semi-Conductors
BFX89-BFY90
THERMAL DATA
R(h j-case Thermal Resistance Junction-case Max 580 °C/W
Rth i-amb Thermal Resistance Junction-ambient Max 880 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 <C unless otherwise specified)
Symbol Parameter Test Conditions Mln. Typ. Max. Unit
ICBO Collector Cutoff Current
VCB - 1 5 V 10 nA
(le-0)
VCEK' Collector-emitter Knee
Ic - 20 mA 0.75 V
Voltage
nF£ DC Current Gain lc -2 mA VCE -1 V
for BFX89 20 150
for BFY90 25 150
lc =25 mA VCE -1 V 20 125
fr Transition Frequency VCE - 5 V f - 500 MHz
lc - 2 m A
for BFX89 1 GHz
for BFY90 1 1.1 GHz
lc - 25 mA
for BFX89 1.2 GHz
for BFY90 1.3 1.4 GHz
C CBO(1) Collector-base Capacitance IE=0 VCB - 1 0 V
f - 1 MHz for BFX89 1.7 PF
for BFY90 1.5 PF
C r .< 2 > Reverse Capacitance lc-2mA VCE - 5 V
f - 1 MHz for BFX89 0.6 PF
for BFY90 0.6 0.8 PF
NF(2)
Noise Figure lc - 2 mA VCE - 5 V
R g - Optimized f - 100 kHz
for BFY90 Only 4 dB
f - 200 MHz
R, . Optimized for BFX89
for BFY90 3.3 4 dB
f = 500 MHz 2.5 3.5 dB
Rg=50fl forBFX89
for BFY90 6.5 dB
f > 800 MHz 5 dB
R g = Optimized for BFX89
for BFY90 7 dB
5.5 dB
G p .< 2 > Power Gain (not neutralized) for BFX89
lc-8mA Vce-10V
f - 200 MHz 19 22 dB
f = 800 MHz 7 dB
for BFY90
l c -14mA VCE -10V
f - 200 MHz 21 23 dB
f . 800 MHz 8 dB
Po Output Power loi BFX89
lc=8mA VCE - 1 0 V
dim--30dB
131 Channel 9 6 mW
(4) Channel 62 6 mW
for BFY90
c = 14mA VCE - 1 0 V
dim = - 3 0 d B
< 3 > Channel 9 10 12 mW
|4) Channel 62 12 mW
• IB, value lor witch !c> 22mA at VCE - 1 V (3) Ip . 202 MHz, f, = 205 MHz, f(Jw, - 208 MHz
1 ) Shield lead not grounded W t- - ™ "Hz- '• - 0°2 MHz' '"«> - 806 MHz
2) Shield toad grounded
