BLF881; BLF881S

UHF power LDMOS transistor

Rev. 02 — 10 February 2010 Product data sheet

1. Product profile

1.1 General description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.

Table 1. Typical performance

RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp ηD IMD3 IMDshldr
(MHz) (W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB f1 = 860; f2 = 860.1 - 140 - 21 49 −34 -
DVB-T (8k OFDM) 858 - - 33 21 34 - −33[1]

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features
„ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
‹ Peak envelope power load power = 140 W
‹ Power gain = 21 dB
‹ Drain efficiency = 49 %
‹ Third order intermodulation distortion = −34 dBc
„ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
‹ Average output power = 33 W
‹ Power gain = 21 dB
‹ Drain efficiency = 34 %
‹ Shoulder distance = −33 dBc (4.3 MHz from center frequency)
„ Integrated ESD protection
„ Excellent ruggedness
„ High power gain
NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

„ High efficiency
„ Excellent reliability
„ Easy power control
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

1.3 Applications
„ Communication transmitter applications in the UHF band
„ Industrial applications in the UHF band

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF881 (SOT467C)
1 drain
1
2 gate 1

3 source [1]
3
2
3
2 sym112

BLF881S (SOT467B)
1 drain
1 1
2 gate
3 source [1]
3
2
3
2 sym112

[1] Connected to flange.

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF881 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
BLF881S - earless LDMOST ceramic package; 2 leads SOT467B

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 2 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 104 V
VGS gate-source voltage −0.5 +13 V
Tstg storage temperature −65 +150 °C
Tj junction temperature - 200 °C

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; [1] 0.95 K/W
PL(AV) = 70 W

[1] Rth(j-c) is measured under RF conditions.

6. Characteristics
Table 6. DC characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.35 mA [1] 104 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 1.35 mA [1] 1.4 - 2.4 V
IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 μA
IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 19 21 - A
IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA
RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 4.5 A [1] - 210 - mΩ
Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 100 - pF
Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 33.5 - pF
Crss reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1 - pF

[1] ID is the drain current.

Table 7. RF characteristics
Th = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
2-Tone, class AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current - 0.5 - A
PL(PEP) peak envelope power load power - 140 - W
Gp power gain 20 21 - dB
ηD drain efficiency 45 49 - %
IMD3 third-order intermodulation distortion - −34 −30 dBc
BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 3 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

Table 7. RF characteristics …continued

Th = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
DVB-T (8k OFDM)
VDS drain-source voltage - 50 - V
IDq quiescent drain current - 0.5 - A
PL(AV) average output power - 33 - W
Gp power gain 20 21 - dB
ηD drain efficiency 30 34 - %
IMDshldr intermodulation distortion shoulder [1] - −33 −30 dBc
PAR peak-to-average ratio [2] - 8.3 - dB

[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

001aal074
200
Coss
(pF)
160

120

80

40

0
0 20 40 60 80
VDS (V)

VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values

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Product data sheet Rev. 02 — 10 February 2010 4 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

7. Application information

7.1 Narrowband RF figures

7.1.1 CW

001aal075
23 70
Gp ηD
(dB) (%)
22 Gp 60

21 50

20 40
ηD

19 30

18 20

17 10

16 0
0 40 80 120 160 200
PL (W)

VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as function of load power; typical values

7.1.2 2-Tone

0001aal076 001aal077
23 70 0
Gp ηD
(dB) Gp (%)
22 60 IMD3
(dBc)

21 50
−20

20 ηD 40

19 30

−40
18 20

17 10

16 0 −60
0 40 80 120 160 0 40 80 120 160
PL(AV) (W) PL(AV) (W)

VDS = 50 V; IDq = 0.5 A; measured in a common-source VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit. narrowband 860 MHz test circuit.
Fig 3. 2-Tone power gain and drain efficiency as Fig 4. 2-Tone third order intermodulation distortion
function of average load power; typical values as a function of average load power; typical
values

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 5 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

7.1.3 DVB-T

001aal078 001aal079
23 70 0
Gp ηD
IMDshldr
(dB) (%)
22 Gp 60 (dBc)
−10
21 50

−20
20 40

ηD
19 30
−30

18 20
−40 (1)
17 10
(2)

16 0 −50
0 30 60 90 0 30 60 90
PL(AV) (W) PL(AV) (W)

VDS = 50 V; IDq = 0.5 A; measured in a common-source VDS = 50 V; IDq = 0.5 A; measured in a common-source
narrowband 860 MHz test circuit. narrowband 860 MHz test circuit.
(1) Lower adjacent channel
(2) Upper adjacent channel
Fig 5. DVB-T power gain and drain efficiency as Fig 6. DVB-T shoulder distance as a function of
function of average load power; typical values average load power; typical values

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Product data sheet Rev. 02 — 10 February 2010 6 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

7.2 Broadband RF figures

7.2.1 DVB-T

001aal080 001aal081
9.0 50 25 0
Gp IMDshdr
PAR ηD (dB) (dBc)
(dB) (%) 23 −10

8.0 PAR 40
21 Gp −20

ηD 19 −30
IMDshdr
7.0 30

17 −40

6.0 20 15 −50
400 500 600 700 800 900 400 500 600 700 800 900
f (MHz) f (MHz)

VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in common-source broadband test circuit as described in
Section 8. Section 8.
Fig 7. DVB-T PAR at 0.01 % probability on the CCDF Fig 8. DVB-T power gain and shoulder distance as
and drain efficiency as function of frequency; function of frequency; typical values
typical values

7.3 Ruggedness in class-AB operation

The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in Section 8.

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 7 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

7.4 Reliability

001aal082
106
Years

105

(1) (2) (3) (4) (5) (6)

104

103

102

10
(7) (8) (9) (10) (11)

1
0 2 4 6
IDS(DC) (A)

TTF (0.1 % failure fraction).

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 9. BLF881 electromigration

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Product data sheet Rev. 02 — 10 February 2010 8 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

8. Test information
Table 8. List of components
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 5.1 pF [1]

C3, C4 multilayer ceramic chip capacitor 10 pF [2]

C5 multilayer ceramic chip capacitor 6.8 pF [1]

C6 multilayer ceramic chip capacitor 4.7 pF [1]

C7 multilayer ceramic chip capacitor 2.7 pF [1]

C8, C9, C10, C25, multilayer ceramic chip capacitor 100 pF [1]

C26
C11, C27 multilayer ceramic chip capacitor 10 μF TDK C570X7R1H106KT000N or
capacitor of same quality.
C12 electrolytic capacitor 470 μF; 63 V
C20 multilayer ceramic chip capacitor 10 pF [3]

C21 multilayer ceramic chip capacitor 8.2 pF [3]

C22 trimmer 0.6 pF to 4.5 pF Tekelec

C23 multilayer ceramic chip capacitor 6.8 pF [3]

C24 multilayer ceramic chip capacitor 3.9 pF [3]

L1 stripline - [4] (W × L) 7 mm × 15 mm
L2 stripline - [4] (W × L) 2.4 mm × 9 mm
L3 stripline - [4] (W × L) 2.4 mm × 10 mm
L4 stripline - [4] (W × L) 2.4 mm × 25 mm
L5 stripline - [4] (W × L) 2.4 mm × 10 mm
L6 stripline - [4] (W × L) 2.0 mm × 20 mm
L7 stripline - [4] (W × L) 2.0 mm × 21 mm
L20 stripline - [4] (W × L) 7 mm × 12 mm
L21 stripline - [4] (W × L) 2.4 mm × 13 mm
L22 stripline - [4] (W × L) 2.4 mm × 31 mm
L23 stripline - [4] (W × L) 2.4 mm × 5 mm
R1 resistor 100 Ω
R2 resistor 10 kΩ

[1] American technical ceramics type 100B or capacitor of same quality.

[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 μm.

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Product data sheet Rev. 02 — 10 February 2010 9 of 18

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Product data sheet
BLF881_BLF881S_2

NXP Semiconductors
VGG
R2
C11 C12

C27
VDD

C26
C9
Rev. 02 — 10 February 2010

R1
L6

C20 C1 C3

50 Ω C25 L23 C8 50 Ω
L22 L21 L20 L1 L2 L3 L4 L5

C24 C23 C22 C21

C2 C4 C5 C6 C7

L7

BLF881; BLF881S
C10
001aaj288

UHF power LDMOS transistor

© NXP B.V. 2010. All rights reserved.
10 of 18

See Table 8 for a list of components.

Fig 10. Class-AB common-source broadband amplifier
NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

76.2 mm

40 mm 40 mm
001aaj289

Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 11 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

R2 C11

C9

C12
C27

L6

C26

R1
C1 C3

C20

C25 L23 C22 L20 L1 L2

L21
C24 C21
C5
C2 C4
C8
C23
L3

L5
L7
C6

L23
C7

C10
L4

001aaj290

See Table 8 for a list of components.

Fig 12. Component layout for class-AB common source amplifier

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Product data sheet Rev. 02 — 10 February 2010 12 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C

A
F
3
D1

U1 B
q C c

E1
H U2 E

A p w1 M A M B M

b w2 M C M Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2

mm 4.67 5.59 0.15 9.25 9.27 5.92 5.97 1.65 18.54 3.43 2.21 20.45 5.97
14.27 0.25 0.51
3.94 5.33 0.10 9.04 9.02 5.77 5.72 1.40 17.02 3.18 1.96 20.19 5.72
0.184 0.220 0.006 0.364 0.365 0.233 0.235 0.065 0.73 0.135 0.087 0.805 0.235
inch 0.562 0.010 0.020
0.155 0.210 0.004 0.356 0.355 0.227 0.225 0.055 0.67 0.125 0.077 0.795 0.225

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

99-12-06
SOT467C
99-12-28

Fig 13. Package outline SOT467C

BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 02 — 10 February 2010 13 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

Earless LDMOST ceramic package; 2 leads SOT467B

A
F
3
D1 D

U1 c
1

E1

H U2 E

2
b w2 A Q

0 5 10 mm

Dimensions scale

Unit(1) A b c D D1 E E1 F H L Q U1 U2 w2

max 4.67 5.59 0.15 9.25 9.27 5.92 5.97 1.65 18.29 2.92 2.21 9.78 5.97
mm nom 0.25
min 3.94 5.33 0.10 9.04 9.02 5.77 5.72 1.40 17.27 2.16 1.96 9.53 5.72
max 0.184 0.22 0.006 0.364 0.365 0.233 0.235 0.065 0.72 0.115 0.087 0.385 0.235
inches nom 0.01
min 0.155 0.21 0.004 0.356 0.355 0.227 0.225 0.055 0.68 0.085 0.077 0.375 0.225
Note
1. millimeter dimensions are derived from the original inch dimensions. sot467b_po

Outline References European

Issue date
version IEC JEDEC JEITA projection
08-12-09
SOT467B
09-10-27

Fig 14. Package outline SOT467B

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Product data sheet Rev. 02 — 10 February 2010 14 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

10. Abbreviations
Table 9. Abbreviations
Acronym Description
CW Continuous Wave
CCDF Complementary Cumulative Distribution Function
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
ESD ElectroStatic Discharge
HF High Frequency
IMD3 Third order InterModulation Distortion
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM Orthogonal Frequency Division Multiplexing
PAR Peak-to-Average power Ratio
PEP Peak Envelope Power
RF Radio Frequency
TTF Time To Failure
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio

11. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF881_BLF881S_2 20100210 Product data sheet - BLF881_BLF881S_1
Modifications: • The status of this document has been changed to “Product data sheet”.
BLF881_BLF881S_1 20091210 Preliminary data sheet - -

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Product data sheet Rev. 02 — 10 February 2010 15 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no
use of such information. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended NXP Semiconductors does not accept any liability related to any default,
for quick reference only and should not be relied upon to contain detailed and damage, costs or problem which is based on a weakness or default in the
full information. For detailed and full information see the relevant full data customer application/use or the application/use of customer’s third party
sheet, which is available on request via the local NXP Semiconductors sales customer(s) (hereinafter both referred to as “Application”). It is customer’s
office. In case of any inconsistency or conflict with the short data sheet, the sole responsibility to check whether the NXP Semiconductors product is
full data sheet shall prevail. suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
Product specification — The information and data provided in a Product product. NXP Semiconductors does not accept any liability in this respect.
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and Limiting values — Stress above one or more limiting values (as defined in
customer have explicitly agreed otherwise in writing. In no event however, the Absolute Maximum Ratings System of IEC 60134) will cause permanent
shall an agreement be valid in which the NXP Semiconductors product is damage to the device. Limiting values are stress ratings only and (proper)
deemed to offer functions and qualities beyond those described in the operation of the device at these or any other conditions above those given in
Product data sheet. the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Terms and conditions of commercial sale — NXP Semiconductors
Limited warranty and liability — Information in this document is believed to products are sold subject to the general terms and conditions of commercial
be accurate and reliable. However, NXP Semiconductors does not give any sale, as published at http://www.nxp.com/profile/terms, unless otherwise
representations or warranties, expressed or implied, as to the accuracy or agreed in a valid written individual agreement. In case an individual
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Right to make changes — NXP Semiconductors reserves the right to make Semiconductors product expressly states that the product is automotive
changes to information published in this document, including without qualified, the product is not suitable for automotive use. It is neither qualified
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Suitability for use — NXP Semiconductors products are not designed, In the event that customer uses the product for design-in and use in
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Product data sheet Rev. 02 — 10 February 2010 16 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
NXP Semiconductors’ specifications such use shall be solely at customer’s Notice: All referenced brands, product names, service names and trademarks
own risk, and (c) customer fully indemnifies NXP Semiconductors for any are the property of their respective owners.
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

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Product data sheet Rev. 02 — 10 February 2010 17 of 18

NXP Semiconductors BLF881; BLF881S
UHF power LDMOS transistor

14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
7.1.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.3 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 7
7.2.1 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.3 Ruggedness in class-AB operation . . . . . . . . . 7
7.4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13 Contact information. . . . . . . . . . . . . . . . . . . . . 17
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 February 2010
Document identifier: BLF881_BLF881S_2