DISCRETE SEMICONDUCTORS

DATA SHEET

M3D065

BLF244 VHF power MOS transistor

Product specication Supersedes data of 1997 Dec 17 2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123A PIN 1 2 3 4 drain source gate source DESCRIPTION
2 3
MSB057

BLF244

PIN CONFIGURATION

handbook, halfpage

4 d g
MBB072

Fig.1 Simplified outline and symbol.

CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 15 Gp (dB) >13 D (%) >50

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS 65 MIN.

BLF244

MAX. 65 20 3 38 150 200

UNIT V V A W C C

THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 38 W Tmb = 25 C; Ptot = 38 W VALUE 4.6 0.3 UNIT K/W K/W

handbook, halfpage

10

MRA919

handbook, halfpage

50

MGP151

Ptot

ID (A)

(W) 40

(1)

(1) 1

30 (2)
(2)

20

10

101

10

VDS (V)

102

0 0 50 100 Th (C) 150

(1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.

(1) Short-time operation during mismatch. (2) Continuous operation.

Fig.2 DC SOAR.

Fig.3 Power derating curves.

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs F PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched devices forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance noise gure; see Fig.13 CONDITIONS VGS = 0; ID = 5 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 5 mA; VDS = 10 V ID = 5 mA; VDS = 10 V ID = 0.75 A; VDS = 10 V ID = 0.75 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz ID = 0.5 A; VDS = 28 V; R1 = 23 ; Th = 25 C; f = 175 MHz; Rth mb-h = 0.3 K/W MIN. 65 2 0.6

BLF244

TYP. MAX. UNIT 0.8 5 60 40 4.5 4.3 1 1 4.5 100 1.5 V mA A V mV S A pF pF pF dB

VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5

GROUP

GROUP

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

MGP152

handbook, halfpage

handbook, halfpage

MGP153

T.C. (mV/K) 0

ID (A) 4

4 2 6

8 1 10

0 102 ID (mA) 103 0 4 8 12 VGS (V) 16

VDS = 10 V; valid for Tj = 25 to 125 C.

Fig.4

Temperature coefficient of gate-source voltage as a function of drain current, typical values.

VDS = 10 V. solid line: Tj = 25 C. dotted line: Tj = 125 C.

Fig.5

Drain current as a function of gate-source voltage, typical values.

handbook, halfpage

MGP154

handbook, halfpage

160

MGP155

RDS(on) ()

C (pF) 120

80 Cis Cos 40

0 0 40 80 120 Tj (C) 160

0 0 10 20 30 VDS (V) 40

VGS = 10 V; ID = 0.75 A. VGS = 0; f = 1 MHz.

Fig.6

Drain-source on-state resistance as a function of junction temperature, typical values.

Fig.7

Input and output capacitance as functions of drain-source voltage, typical values.

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

handbook, halfpage

20

MGP156

Crs (pF)

10

0 0 20 VDS (V) 40

VGS = 0; f = 1 MHz.

Fig.8

Feedback capacitance as a function of drain-source voltage; typical values.

APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 3 K/W; unless otherwise specied. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION CW, class-B f (MHz) 175 175 Note 1. R1 included. Ruggedness in class-B operation The BLF244 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 C; Rth mb-h = 0.3 K/W; at rated load power. VDS (V) 28 12.5 IDQ PL (mA) (W) 25 25 15 6 GP (dB) >13 typ. 17 typ. 15 D (%) >50 typ. 65 typ. 60 Zi ()(1) 3.0 j4.0 3.0 j4.0 ZL () 6.3 + j9.8 4.5 + j3.3 R1 () 46.4//46.4 100

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

handbook, halfpage

30

MGP157

handbook, halfpage

20

MGP158

Gp

100

PL (W)

Gp (dB) D

D (%)

20

10

50

10 0 1 PIN (W) 2

0 0 10 20 PL (W)

0 30

Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.

Class-B operation; VDS = 28 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.

Fig.9

Load power as a function of input power; typical values.

Fig.10 Power gain and efficiency as functions of load power; typical values.

handbook, halfpage

20

MGP159

handbook, halfpage

20

MGP160

100 D (%)

Gp (dB) PL (W) 16 Gp

80

10

12

60

40

0 0 1 PIN (W) 2

4 0 4 8 12 PL (W)

20 16

Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.

Class-B operation; VDS = 12.5 V; IDQ = 25 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.

Fig.11 Load power as a function of input power; typical values.

Fig.12 Power gain and efficiency as functions of load power; typical values.

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

handbook, full pagewidth

+VG R2 C6

R3

C14 C7

L6

+VD C13

L5 C2 50 input C1 L1 C5 L2 R1 L3 D.U.T. L4 L7

C8 L8

C11 C12

50 output

C9 C3 C4

C10

MGP161

f = 175 MHz.

Fig.13 Test circuit for class-B operation.

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

List of components (see Fig.13) COMPONENT C1, C12 C2 C3, C4, C9 C5 C6 C7 C8 C10, C11 C13 C14 L1 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 solid tantalum capacitor multilayer ceramic chip capacitor 4 turns enamelled 1 mm copper wire VALUE 680 nF 20 pF 5 to 60 pF 75 pF 10 nF 100 pF 47 pF 11 pF 2.2 F 100 nF 32 nH length 6.3 mm int. dia. 3 mm leads 2 5 mm int. dia. 5.6 mm leads 2 5 mm 15 6 mm length 10.4 mm int. dia. 6 mm leads 2 5 mm DIMENSIONS

BLF244

CATALOGUE NO.

2222 809 08003 2222 852 47103

2222 852 47104

L2 L3, L4 L5

1 turn enamelled 1 mm copper wire stripline; note 2 6 turns enamelled 1 mm copper wire

12.2 nH 30 119 nH

L6 L7

grade 3B Ferroxcube RF choke 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm int. dia. 3 mm leads 2 5 mm length 8.5 mm int. dia. 3 mm leads 2 5 mm

4312 020 36640

L8

4 turns enamelled 1 mm copper wire

28.5 nH

R1 R2 R3 Notes

metal lm resistor; note 3 0.4 W metal lm resistor 0.4 W metal lm resistor 1 M 10

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (r = 4.5), thickness 116 inch. 3. Refer to Application Information for value.

2003 Oct 13

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

150
handbook, full pagewidth

strap

rivet 70

strap

L6 +VD C13 C6 R1 L3 L4 C10 C3 C4 C9 L5 R3 L7 C8 L8 C11 C12

R2 +VG C2 C1 L1 C5 L2

C7 C14

MGP162

Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and hollow rivets under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane.

Fig.14 Component layout for 175 MHz class-B test circuit.

2003 Oct 13

10

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244

handbook, halfpage

60

MGP164

MGP165

handbook, halfpage

25

Zi () 40

ZL () 20

RL

15 xi 10 20 XL 5 ri 0 20 40 60 80 100 120 f (MHz) 0 20 40 60 80 100 120 f (MHz)

Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.

Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.

Fig.15 Input impedance as a function of frequency (series components); typical values.

Fig.16 Load impedance as a function of frequency (series components); typical values.

MGP166

handbook, halfpage

40

Gp (dB) 36

32

28

24

20 20

40

60

80

100 120 f (MHz)

Class-B operation; VDS = 28 V; IDQ = 25 mA; PL = 15 W; Th = 25 C; Rth mb-h = 0.3 K/W.

Fig.17 Power gain as function of frequency; typical values.

2003 Oct 13

11

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244 scattering parameters VDS = 12.5 V; ID = 25 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 0.98 0.93 0.84 0.77 0.73 0.72 0.71 0.72 0.72 0.74 0.75 0.78 0.81 0.85 0.87 0.90 0.92 0.94 0.94 0.95 0.95 0.95 0.94 0.94 0.93 0.92 s11 18.6 35.0 63.4 83.3 97.6 107.9 115.7 121.4 126.0 130.0 133.8 142.0 147.9 152.7 157.6 165.1 171.5 176.8 178.3 174.0 169.9 162.4 155.4 148.6 142.0 135.5 |s21| 15.11 14.06 11.55 9.20 7.41 6.09 5.09 4.32 3.72 3.26 2.88 2.16 1.66 1.33 1.09 0.75 0.56 0.42 0.34 0.28 0.24 0.19 0.18 0.19 0.21 0.23 s21 165.1 152.3 130.0 114.5 102.8 93.7 86.2 80.1 74.8 70.1 65.6 55.5 48.1 42.2 36.7 28.8 23.8 21.4 20.8 21.9 24.8 33.8 42.8 50.1 54.4 59.6 |s12| 0.02 0.04 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.006 0.06 0.05 0.04 0.03 0.02 0.01 0.03 0.04 0.06 0.07 0.09 0.12 0.14 0.17 0.19 0.22 s12 75.8 63.1 42.1 27.3 16.5 8.5 2.0 3.1 7.2 10.9 14.3 20.6 22.9 21.0 12.8 46.1 80.9 88.3 89.0 88.8 86.9 83.5 79.9 77.1 71.6 73.5 |s22| 0.98 0.95 0.86 0.80 0.76 0.74 0.74 0.74 0.75 0.76 0.78 0.81 0.84 0.86 0.88 0.92 0.94 0.95 0.96 0.96 0.96 0.97 0.96 0.96 0.94 0.93

BLF244

s22 18.9 36.5 65.1 85.7 99.8 109.8 117.3 123.1 127.8 131.9 135.4 142.4 147.8 152.4 156.4 162.9 168.1 172.4 176.2 179.6 177.3 171.8 166.8 162.1 157.9 162.9

2003 Oct 13

12

Philips Semiconductors

Product specication

VHF power MOS transistor

BLF244 scattering parameters VDS = 28 V; ID = 25 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. 0.99 0.96 0.89 0.83 0.79 0.77 0.76 0.75 0.76 0.76 0.77 0.79 0.82 0.85 0.87 0.89 0.92 0.93 0.94 0.95 0.94 0.94 0.94 0.93 0.93 0.92 s11 15.9 30.1 56.5 76.5 91.7 103.1 111.8 118.3 123.5 127.9 132.0 140.7 146.7 151.6 156.5 164.0 170.5 175.8 179.1 174.8 170.7 163.1 156.0 149.2 142.5 136.1 |s21| 15.62 14.85 12.92 10.79 8.98 7.55 6.40 5.50 4.79 4.24 3.77 2.88 2.24 1.82 1.50 1.04 0.78 0.59 0.47 0.38 0.32 0.25 0.22 0.21 0.22 0.23 s21 167.8 157.2 137.3 122.3 110.5 101.1 93.4 87.1 81.7 76.8 72.2 61.9 54.2 47.9 42.0 33.2 27.0 23.1 20.9 20.0 20.8 26.1 33.7 41.9 47.9 57.3 |s12| 0.01 0.03 0.04 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.05 0.04 0.03 0.02 0.01 0.03 0.04 0.06 0.07 0.09 0.12 0.14 0.17 0.19 0.17 s12 78.5 68.0 49.3 35.1 24.1 15.8 9.1 3.8 0.5 4.3 7.7 14.3 16.8 15.2 7.5 48.5 83.8 91.3 91.9 91.5 89.4 85.7 81.9 78.9 73.1 75.3 |s22| 0.98 0.96 0.88 0.81 0.76 0.73 0.72 0.72 0.72 0.73 0.74 0.77 0.80 0.83 0.85 0.89 0.92 0.93 0.95 0.95 0.96 0.96 0.96 0.96 0.94 0.93

BLF244

s22 13.8 27.1 50.1 68.2 81.7 91.9 99.9 106.4 111.8 116.6 120.8 129.3 135.8 141.4 146.3 154.2 160.5 165.7 170.1 174.1 177.6 176.1 170.6 165.5 160.9 165.9

2003 Oct 13

13

Philips Semiconductors

Product specication

VHF power MOS transistor

PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads

BLF244

SOT123A

A F D1 q U1 C B

w2 M C M H b c

3
A

U2

U3

1 2
H

w1 M A M B M

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.78 9.42 F 2.72 2.31 H 20.71 19.93 p 3.33 3.04 0.131 0.120 Q 4.63 4.11 q 18.42 U1 24.87 24.64 U2 6.48 6.22 U3 9.78 9.39 w1 0.25 w2 0.51 45

0.229 0.007 0.219 0.004

0.383 0.385 0.107 0.815 0.373 0.371 0.091 0.785

0.182 0.980 0.725 0.162 0.970

0.255 0.385 0.010 0.020 0.245 0.370

OUTLINE VERSION SOT123A

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 99-03-29

2003 Oct 13

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Philips Semiconductors

Product specication

VHF power MOS transistor

DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION

BLF244

This data sheet contains data from the objective specication for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specication. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specication. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN).

II

Preliminary data Qualication

III

Product data

Production

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2003 Oct 13

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Philips Semiconductors a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Koninklijke Philips Electronics N.V. 2003

SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613524/03/pp16

Date of release: 2003

Oct 13

Document order number:

9397 750 11584