DISCRETE SEMICONDUCTORS

DATA SHEET

M3D175

BLF404
UHF power MOS transistor
Product specification 2003 Sep 26
Supersedes data of 1998 Jan 29
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

FEATURES PINNING - SOT409A

• High power gain PIN DESCRIPTION
• Easy power control 1, 8 source
• Gold metallization 2, 3 gate
• Good thermal stability 4, 5 source
• Withstands full load mismatch 6, 7 drain
• Designed for broadband operation.

APPLICATIONS
halfpage 8 5
• Communication transmitters in the VHF/UHF range with
d
a nominal supply voltage of 12.5 V.

g
DESCRIPTION MBB072 s

Silicon N-channel enhancement mode vertical D-MOS 1 4

power transistor in an 8-lead SOT409A SMD package with Top view MBK150

a ceramic cap.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at Tmb ≤ 60 °C in a common source test circuit.

f VDS PL Gp ηD
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW class-AB 500 12.5 4 ≥10 ≥50

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

2003 Sep 26 2
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage − 40 V
VGS gate-source voltage − ±20 V
ID drain current (DC) − 1.5 A
Ptot total power dissipation Tmb ≤ 85 °C − 8.3 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction to mounting base Tmb ≤ 85 °C, Ptot = 8.3 W 12.1 K/W

MGM522
10
handbook, halfpage

ID
(A)

1
(1) (2)

10−1
1 10 VDS (V) 102

(1) Current in this area may be limited by RDSon.

(2) Tmb = 85 °C.

Fig.2 DC SOAR.

2003 Sep 26 3
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 5 mA 40 − − V
VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V
IDSS drain-source leakage current VGS = 0; VDS = 12.5 V − − 0.5 mA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA
IDSX on-state drain current VGS = 15 V; VDS = 10 V − 2.3 − A
RDSon drain-source on-state resistance ID = 0.7 A; VGS = 15 V − 1.8 2.7 Ω
gfs forward transconductance ID = 0.7 A; VDS = 10 V 200 270 − mS
Cis input capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 14 − pF
Cos output capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 17 − pF
Crs feedback capacitance VGS = 0; VDS = 12.5 V; f = 1 MHz − 3 − pF

VGS group indicator

LIMITS LIMITS
GROUP (V) GROUP (V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3

2003 Sep 26 4
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MRA254 MRA249
25 3
handbook, halfpage handbook, halfpage

T.C. ID
(mV/K) (A)

15 2

5 1

−5 0
10 102 103 104 0 4 8 12 16 20
ID(mA) VGS (V)

VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.3 Temperature coefficient of gate-source
voltage as a function of drain current; typical Fig.4 Drain current as a function of gate-source
values. voltage; typical values.

MRA253 MRA246
5 50
handbook, halfpage handbook, halfpage
RDSon C
(Ω) (pF)
4 40

3 30

Cos
2 20

Cis
1 10

0 0
0 50 100 150 0 4 8 12 16
Tj (oC) VDS (V)

ID = 0.7 A; VGS = 15 V.
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.5 Drain-source on-state resistance as a
function of junction temperature; typical Fig.6 Input and output capacitance as functions
values. of drain-source voltage; typical values.

2003 Sep 26 5
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MRA256
10
handbook, halfpage
Crs
(pF)
8

0
0 4 8 12 16
VDS (V)

VGS = 0; f = 1 MHz; Tj = 25 °C.

Fig.7 Feedback capacitance as a function of

drain-source voltage; typical values.

APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with
through metallized holes.
f VDS IDQ PL Gp ηD
MODE OF OPERATION
(MHz) (V) (A) (W) (dB) (%)
CW, class-AB 500 12.5 50 4 ≥10 ≥50
typ. 11.5 typ. 55

Ruggedness in class-AB operation

The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C.

2003 Sep 26 6
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MGM520 MGM521
20 100 6
handbook, halfpage handbook, halfpage
Gp ηD
(dB) (%) PL
16 80 (W)

ηD 4
12 60

Gp
8 40
2

4 20

0 0 0
0 2 4 6 0 200 400 600
PL (W) PD (mW)

CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;
IDQ = 50 mA; Tmb ≤ 60 °C. IDQ = 50 mA; Tmb ≤ 60 °C.

Fig.8 Power gain and drain efficiency as functions Fig.9 Load power as a function of drive power;
of load power; typical values. typical values.

handbook, full pagewidth +VD

R3

R1 R2 R4 L1
C1

C3
R6 L2
C2
R5 C10 output
L8 L9 L10 L11 50 Ω
L4
input C5 C11
50 Ω L5 L6 L3 L7 DUT
C9 C12 C13
C6
MGM523
C8
C4 C7

Fig.10 Test circuit for class-AB operation at f = 500 MHz.

2003 Sep 26 7
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

List of components; see Figs 10 and 11.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1 electrolytic capacitor 4.7 µF, 10 V
C2, C3 multilayer ceramic chip capacitor 47 nF
C4 multilayer ceramic chip capacitor; note 1 18 pF
C5, C10 multilayer ceramic chip capacitor; note 1 180 pF
C6, C11 multilayer ceramic chip capacitor; note 1 270 pF
C7 multilayer ceramic chip capacitor; note 1 22 pF
C8 multilayer ceramic chip capacitor; note 1 8.2 pF
C9 multilayer ceramic chip capacitor; note 1 2.7 pF
C12 multilayer ceramic chip capacitor; note 1 1.2 pF
C13 multilayer ceramic chip capacitor; note 1 12 pF
L1 2 turns 1 mm enamelled copper wire on ext. dia. = 4.2 mm
a grade 4B1 Ferroxcube core int. dia. = 2 mm
length = 6 mm
L2 3 turns 1 mm enamelled copper wire int. dia. = 4.6 mm
leads = 2 x 5 mm
L3 bifilar coil lead dia. = 0.8 mm
L4 bifilar coil lead dia. = 1 mm
L5 stripline; note 2 50 Ω 8.8 × 2.38 mm
L6 stripline; note 2 50 Ω 5.8 × 2.38 mm
L7 stripline; note 2 50 Ω 6.8 × 2.38 mm
L8 stripline; note 2 50 Ω 3.76 × 2.38 mm
L9 stripline; note 2 50 Ω 5.8 × 2.38 mm
L10 stripline; note 2 50 Ω 4.48 × 2.38 mm
L11 stripline; note 2 50 Ω 3.13 × 2.38 mm
R1, R2 SMD resistor 3.9 kΩ
R3 metal film resistor 1 kΩ, 0.25 W
R4 metal film resistor 22 Ω, 0.25 W
R5 metal film resistor 10 kΩ, 0.25 W
R6 potentiometer 10 kΩ

Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2);
thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm.

2003 Sep 26 8
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

handbook, full pagewidth 56

31

2
3 1
+VD
R6

R1
R2 C1

R3
L1
C2 R4 C3

R5
L2
C5 C10
BLF404

L3 L4
L5 L6 L7 L8 L9 L10 L11
C6 C11
C4 C7 C8 C9 C12 C13

MGM524

Dimensions in mm.

The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.

Fig.11 Component layout for 500 MHz class-AB test circuit.

2003 Sep 26 9
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MGM517 MGM518
8 0 16
handbook, halfpage handbook, halfpage
ri xi ZL
(Ω) xi (Ω) (Ω)

6 −20 12

4 −40 8
RL

XL
2 −60 4
ri

0 −80 0
0 200 400 600 0 200 400 600
f (MHz) f (MHz)

CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; CW, class-AB operation; VDS = 12.5 V; ID = 50 mA;
PL = 4 W; Tmb ≤ 60 °C. PL = 4 W; Tmb ≤ 60 °C.

Fig.12 Input impedance as a function of frequency Fig.13 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.

MGM519
30
handbook, halfpage

Gp
(dB)

20

10

0
0 200 400 600
f (MHz)

CW, class-AB operation; VDS = 12.5 V; IDQ = 50 mA;

PL = 4 W; Tmb ≤ 60 °C.

Fig.14 Power gain as a function of frequency

(series components); typical values.

2003 Sep 26 10
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.

handbook, full pagewidth 0.60 (4×)

1.87 (2×)

0.80 (2×)

0.50 (12×)

7.38 3.60
1.00 (8×)

1.00 (9×)
4.60 MGK390

Dimensions in mm.

Fig.15 Reflow soldering footprint for SOT409A.

2003 Sep 26 11
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

BLF404 scattering parameters

VDS = 12.5 V; ID = 50 mA; note 1.

s11 s21 s12 s22

f (MHz)
|s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ
5 1.00 −5.2 12.97 176.0 0.01 86.0 0.96 −6.0
10 0.99 −10.1 12.89 171.9 0.02 82.2 0.96 −12.0
20 0.98 −20.6 12.61 164.1 0.03 74.8 0.95 −23.5
30 0.96 −30.4 12.18 156.6 0.05 67.6 0.93 −34.7
40 0.93 −39.6 11.62 149.6 0.06 60.9 0.91 −45.1
50 0.89 −48.0 11.00 143.2 0.07 54.8 0.89 −54.7
60 0.86 −55.8 10.37 137.4 0.08 49.4 0.87 −63.5
70 0.83 −62.9 9.74 132.2 0.09 44.4 0.85 −71.4
80 0.80 −69.4 9.15 127.5 0.10 40.1 0.83 −78.5
90 0.78 −75.3 8.60 123.2 0.10 36.2 0.82 −84.8
100 0.75 −80.7 8.08 119.3 0.10 32.7 0.80 −90.5
125 0.71 −92.2 6.96 110.7 0.11 25.1 0.77 −102.6
150 0.68 −101.4 6.03 103.9 0.12 19.1 0.76 −111.9
175 0.66 −108.9 5.30 98.3 0.12 14.4 0.74 −119.2
200 0.64 −115.2 4.73 93.2 0.12 10.2 0.74 −125.1
250 0.63 −124.9 3.81 84.5 0.12 3.5 0.73 −134.1
300 0.64 −132.5 3.19 77.4 0.12 −1.8 0.74 −140.5
350 0.64 −138.6 2.70 71.2 0.11 −6.1 0.74 −145.3
400 0.66 −143.8 2.34 65.7 0.11 −9.7 0.75 −149.1
450 0.67 −148.4 2.03 60.5 0.10 −12.5 0.76 −152.4
500 0.69 −152.6 1.80 56.0 0.09 −15.1 0.78 −155.2
600 0.72 −160.2 1.44 47.7 0.08 −18.2 0.80 −159.9
700 0.75 −167.1 1.18 40.4 0.07 −18.6 0.82 −163.9
800 0.78 −173.6 0.99 34.4 0.05 −15.0 0.84 −167.5
900 0.81 −179.8 0.84 29.2 0.04 -6.0 0.86 −170.7
1000 0.83 174.3 0.73 25.1 0.04 9.9 0.88 −173.6

Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast

2003 Sep 26 12
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

PACKAGE OUTLINE

Ceramic surface mounted package; 8 leads SOT409A

D2 B

w2 B c
H1

8 5 L

H E2 E

A
1 4

e b w1 α

Q1

0 2.5 5 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α

2.36 0.58 0.23 5.94 5.16 4.93 4.14 7.47 4.39 1.02 0.10 7°
mm 1.27 0.25 0.25
2.06 0.43 0.18 5.03 5.00 4.01 3.99 7.26 4.24 0.51 0.00 0°
0.093 0.023 0.009 0.234 0.203 0.194 0.163 0.294 0.173 0.040 0.004 7°
inches 0.050 0.010 0.010
0.081 0.017 0.007 0.198 0.197 0.158 0.157 0.286 0.167 0.020 0.000 0°

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT409A 98-01-27

2003 Sep 26 13
Philips Semiconductors Product specification

UHF power MOS transistor BLF404

DATA SHEET STATUS

DATA SHEET PRODUCT

LEVEL DEFINITION
STATUS(1) STATUS(2)(3)
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DEFINITIONS DISCLAIMERS
Short-form specification  The data in a short-form Life support applications  These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition  Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes  Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information  Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Sep 26 14
Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

© Koninklijke Philips Electronics N.V. 2003 SCA75

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Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 26 Document order number: 9397 750 11603