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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

● Rugged Triple-Diffused Planar Construction SOT-93 PACKAGE

(TOP VIEW)
● 15 A Continuous Collector Current
B 1
● 1000 Volt Blocking Capability

C 2

E 3

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
BUV48 850
Collector-emitter voltage (VBE = 0 V) VCES V
BUV48A 1000
BUV48 850
Collector-emitter voltage (RBE = 10 Ω) VCER V
BUV48A 1000
BUV48 400
Collector-emitter voltage (IB = 0) VCEO V
BUV48A 450
Continuous collector current IC 15 A
Peak collector current (see Note 1) ICM 30 A
Continuous base current IB 4 A
Peak base current IBM 20 A
Non repetitive accidental peak surge current ICSM 55 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

 


AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter BUV48 400
VCEO(sus) IC = 200 mA L = 25 mH (see Note 2) V
sustaining voltage BUV48A 450
VCE = 850 V VBE = 0 BUV48 0.2
Collector-emitter VCE = 1000 V VBE = 0 BUV48A 0.2
ICES mA
cut-off current VCE = 850 V VBE = 0 TC = 125°C BUV48 2.0
VCE = 1000 V VBE = 0 TC = 125°C BUV48A 2.0
VCE = 850 V RBE = 10 Ω BUV48 0.5
Collector-emitter VCE = 1000 V RBE = 10 Ω BUV48A 0.5
ICER mA
cut-off current VCE = 850 V RBE = 10 Ω TC = 125°C BUV48 4.0
VCE = 1000 V RBE = 10 Ω TC = 125°C BUV48A 4.0
Emitter cut-off
IEBO VEB = 5V IC = 0 1 mA
current
Emitter-base
VEBO IE = 50 mA IC = 0 7 30 V
breakdown voltage
IB = 2A IC = 10 A BUV48 1.5
Collector-emitter IB = 3A IC = 15 A BUV48 5.0
VCE(sat) (see Notes 3 and 4) V
saturation voltage IB = 1.6 A IC = 8A BUV48A 1.5
IB = 2.4 A IC = 12 A BUV48A 5.0
Base-emitter IB = 2A IC = 10 A BUV48 1.6
VBE(sat) (see Notes 3 and 4) V
saturation voltage IB = 1.6 A IC = 8A BUV48A 1.6
Current gain
ft VCE = 10 V IC = 0.5 A f = 1 MHz 10 MHz
bandwidth product
Cob Output capacitance VCB = 20 V IC = 0 f = 1 MHz 150 pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1 °C/W

resistive-load-switching characteristics at 25°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn on time 1.0 µs
IC = 10 A VCC = 150 V BUV48
ts Storage time 3.0 µs
IB(on) = 2 A IB(off) = -2 A (see Figures 1 and 2)
tf Fall time 0.8 µs
ton Turn on time 1.0 µs
IC = 8 A VCC = 150 V BUV48A
ts Storage time 3.0 µs
IB(on) = 1.6 A IB(off) = -1.6 A (see Figures 1 and 2)
tf Fall time 0.8 µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

inductive-load-switching characteristics at 100°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tsv Voltage storage time IC = 10 A IB(on) = 2 A 4.0 µs
BUV48
tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) 0.4 µs
tsv Voltage storage time IC = 8 A IB(on) = 1.6 A 4.0 µs
BUV48A
tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) 0.4 µs

 


AUGUST 1978 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.

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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

PARAMETER MEASUREMENT INFORMATION

+25 V

BD135 680 µF
120 Ω 100 Ω
T

V1 V cc V=CC250 V
100 µF
47 Ω

tp TUT
15 Ω

V1 100 Ω
82 Ω 680 µF
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω

Figure 1. Resistive-Load Switching Test Circuit

C 90% 90% E
IC
A - B = td
B - C = tr
B 10% 10% F
E - F = tf 0%
D - E = ts
A - C = ton
D - F = t off
dIB
≥ 2 A/µs
90% D dt
IB
I B(on)

A 10%
0%

I B(off)

Figure 2. Resistive-Load Switching Waveforms

 


AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

PARAMETER MEASUREMENT INFORMATION

33 Ω
+5V

D45H11
BY205-400

BY205-400
33 Ω RB
(on)
1 pF
180 µH
vcc
V Gen 2N2222
1 kΩ
68 Ω 0.02 µF BY205-400
TUT
1 kΩ Vclamp = 400 V

+5V

5X BY205-400
270 Ω BY205-400 1 kΩ

2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A VCC = 50 V
V
For IC ≥ 6 A VCC = 100 V BE(off)
100 Ω

Figure 3. Inductive-Load Switching Test Circuit

I B(on)
A (90%)
A - B = tsv IB Base Current
B - C = trv
D - E = tfi
E - F = tti
C 90%
B - E = txo

B 10%
V Collector Voltage
CE

D (90%)

E (10%)
I Collector Current
C(on)
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.

Figure 4. Inductive-Load Switching Waveforms

 


AUGUST 1978 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.

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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCP765AA TCP765AB
100 5·0

VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE = 5 V TC = 125°C IC = 5 A
TC = 25°C IC = 10 A
TC = -65°C IC = 15 A
4·0
hFE - Typical DC Current Gain

TC = 25°C

3·0

10

2·0

1·0

1·0 0
0·1 1·0 10 20 0·1 1·0 10
IC - Collector Current - A IB - Base Current - A

Figure 5. Figure 6.

COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE

vs vs
BASE CURRENT BASE CURRENT
TCP765AI TCP765AC
5·0 1·6
VCE(sat) - Collector-Emitter Saturation Voltage - V

IC = 5 A
VBE(sat) - Base-Emitter Saturation Voltage - V

IC = 10 A
1·5
IC = 15 A
4·0 IC = 15 A
TC = 100°C 1·4

1·3
3·0 IC = 10 A
1·2

2·0
1·1

1·0 IC = 5 A
1·0
0·9

0 0·8
0·1 1·0 10 0 1 2 3 4 5 6
IB - Base Current - A IB - Base Current - A

Figure 7. Figure 8.

 


AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

COLLECTOR CUT-OFF CURRENT

vs
CASE TEMPERATURE
TCP765AD
4·0
ICES - Collector Cut-off Current - µA

1·0

BUV48A
VCE = 1000 V
0·1

BUV48
VCE = 850 V

0·01
-80 -60 -40 -20 0 20 40 60 80 100 120 140
TC - Case Temperature - °C

Figure 9.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP765AA
100
IC - Collector Current - A

10

1·0

tp = 10 µs
tp = 50 µs
tp = 100 µs
0.1
tp = 500 µs
tp = 1 ms
tp = 2 ms BUV48
DC Operation BUV48A
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V

Figure 10.

 


AUGUST 1978 - REVISED SEPTEMBER 2002
6 Specifications are subject to change without notice.

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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS

MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SOT-93 4,90
4,70

15,2 1,37
ø 4,1 14,7 3,95 1,17
4,0
4,15

16,2 MAX.
12,2 MAX.

31,0 TYP.

18,0 TYP.

1 2 3

1,30 0,78
1,10 0,50

11,1
2,50 TYP.
10,8

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW

 


AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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