Data Sheet No.

PD 60155H

IPS511/IPS511S
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Features Product Summary

• Over temperature protection (with auto-restart)
• Short-circuit protection (current limit ) Rds(on) 135mΩ (max)
• Active clamp
• E.S.D protection
• Status feedback
V clamp 50V
• Open load detection
• Logic ground isolated from power ground
I Limit 5A
V open load 3V

Description
The IPS511/IPS511S are fully protected five terminal Truth Table
high side switches with built in short circuit, over-tem-
perature, ESD protection, inductive load capability Op. Conditions In Out Dg
and diagnostic feedback. The output current is con- Normal H H H
trolled when it reaches I lim value. The current Normal L L L
limitation is activated until the thermal protection
acts. The over-temperature protection turns off the Open load H H H
high side switch if the junction temperature exceeds Open load L H H
Tshutdown. It will automatically restart after the junc- Over current H L (limiting) L
tion has cooled 7 oC below Tshutdown. A diagnostic
pin is provided for status feedback of short-circuit, Over current L L L
over-temperature and open load detection. The double Over-temperature H L (cycling) L
level shifter circuitry allows large offsets between the Over-temperature L L L
logic ground and the load ground.

Typical Connection Packages

+ VCC
+ 5v Output pull-up resistor
15K
Status Vcc
feedback Dg
Logic control 5 Lead
Rdg D2Pak (SMD220
Out
IPS511S
Rin
In Gnd

Logic
Load 5 Lead
signal
TO220
Logic Gnd Load Gnd IPS511

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Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).

Symbol Parameter Min. Max. Units Test Conditions

Vout Maximum output voltage Vcc-50 Vcc+0.3
Voffset Maximum logic ground to load ground offset Vcc-50 Vcc+0.3
V
Vin Maximum Input voltage -0.3 5.5
Vcc max Maximum Vcc voltage — 50
Iin, max. Maximum IN current -5 10 mA
Vdg Maximum diagnostic output voltage -0.3 5.5 V
Idg, max Maximum diagnostic output current -1 10 mA
Isd cont. Diode max. permanent current (1) — 2.2
A
Isd pulsed Diode max. pulsed current (1) — 10
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
kV
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
Pd (1)
Maximum power dissipation
(TC=25oC) IPS511 — 25 W
(rth=80 oC/W) IPS511S — 1.56
Tj max. Max. storage & operating junction temp. -40 +150 o
C
Tlead Lead temperature (soldering 10 seconds) — 300

Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth 1 Thermal resistance junction to case — # —
TO-220
Rth 2 Thermal resistance junction to ambient — $ —
Rth 1 Thermal resistance with standard footprint — 60 — o
C/W
Rth 2 Thermal resistance with 1" square footprint — 40 — D2PAK (SMD220)
Rth 3 Thermal resistance junction to case — # —

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

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Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vcc Continuous Vcc voltage 5.5 35
VIH High level input voltage 4 5.5 V
VIL Low level input voltage -0.3 0.9
Iout Continuous output current
Tamb=85 oC (TAmbient = 85oC, Tj = 125oC, Rth < 60oC/W) IPS511 — 1.7 A
(TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W) IPS511 — 1.5
Rin Recommended resistor in series with IN pin 4 6
kΩ
Rdg Recommended resistor in series with DG pin 10 20

Static Electrical Characteristics

(Tj = 25oC, Vcc = 14V unless otherwise specified.)

Symbol Parameter Min. Typ. Max. Units Test Conditions

Rds(on) ON state resistance Tj = 25oC — 110 135 Vin = 5V, Iout = 2.5A
@Tj=25o C
Rds(on) ON state resistance @ Vcc = 6V — 110 135 Vin = 5V, Iout = 1A
(V cc=6V) mΩ
Rds(on) ON state resistance Tj = 150oC — 200 — Vin = 5V, Iout = 2.5A
@Tj=150oC
Vcc oper. Operating voltage range 5.5 — 35
V clamp 1 Vcc to OUT clamp voltage 1 50 56 — Id = 10mA (see Fig.1 & 2)
Vcc to OUT clamp voltage 2 V Id = Isd (see Fig.1 & 2)
V clamp 2 — 58 65
Vf Body diode forward voltage — 0.9 1.2 Id = 2.5A, Vin = 0V
Icc off Supply current when OFF — 16 50 µA Vin = 0V, Vout = 0V
Icc on Supply current when ON — 0.7 2 mA Vin = 5V
Icc ac Ripple current when ON (AC RMS) — 20 — µA Vin = 5V
Vdgl Low level diagnostic output voltage — 0.15 0.4 V Idg = 1.6 mA
Ioh Output leakage current — 60 110 Vout = 6V
Iol Output leakage current 0 — 25 Vout = 0V
µA
Idg
leakage Diagnostic output leakage current — — 10 Vdg = 5.5V
Vih IN high threshold voltage — 2.3 3
V
Vil IN low threshold voltage 1 1.95 —
Iin, on On state IN positive current — 70 200 µA Vin = 5V
In hyst. Input hysteresis 0.1 0.25 0.5 V

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IPS511/IPS511S

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25oC, (unless otherwise specified).

Symbol Parameter Min. Typ. Max. Units Test Conditions

Tdon Turn-on delay time — 7 50
Tr1 Rise time to Vout = Vcc - 5V — 10 50 µs
Tr2 Rise time Vcc - 5V to Vout = 90% of Vcc — 45 100 See figure 3
dV/dt (on) Turn ON dV/dt — 1.3 4 V/µs
E on Turn ON energy — 400 — µJ
T doff Turn-off delay time — 15 50
µs
Tf Fall time to Vout = 10% of Vcc — 10 50 See figure 4
dV/dt (off) Turn OFF dV/dt — 2 6 V/µs
Eoff Turn OFF energy — 80 — µJ
Tdiag Vout to Vdiag propagation delay — 5 15 µs See figure 6

Protection Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ilim Internal current limit 3 5 7 A Vout = 0V
o
T sd+ Over-temp. positive going threshold — 165 — C See fig. 2
o
Tsd- Over-temp. negative going threshold — 158 — C See fig. 2
V sc Short-circuit detection voltage (3) 2 3 4 V See fig. 2
Vopen load Open load detection threshold 2 3 4 V
(3) Referenced to Vcc

Lead Assignments
3 (Vcc)
3 (Vcc)

1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
12345

12345

5 Lead - TO220 5 Lead - D2PAK (SMD220)

IPS511 IPS511S
Part Number
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Functional Block Diagram

All values are typical

VCC

50V

Over
temperature 165°C

158°C
Tj Charge
62 V pump

2.7 V

Level
IN 2.2 V
shift
driver
7 V 200 KΩ

Current
DG limit + 5A
7 V

20 Ω - +
3V
+ 3V
Open load Short-circuit -

GND VOUT

T clamp

Vin 5V

0V
Vin

Iout T shutdown cycling

limiting
Ilim.

Iout
( + Vcc )
0V
Out T
Tsd+
V clamp Tsd-
(160 ° )

( see Appl . Notes to evaluate power dissipation )

Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram

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IPS511/IPS511S

Vin

Vcc
90%
Vcc - 5V Vin

Vout dV/dt on
90%
10%

Td on dV/dt off
Tr 1
Tr 2 Vout
E1(t)
10%
Iout1
Eon1 Iout2
Td off
Resistive load
E2 (t) Tf
Inductive load
Eon2

Figure 3 - Switching times definition (turn-on) Figure 4 - Switching times definition (turn-off)
Turn on energy with a resistive or an
inductive load

V in

Dg Vcc Vcc
Vcc -Vsc
IN Out
+
Gnd
L 14 V V o ut
Vin -
Vol

Vout
R
5v
V d ia g
0v Iout
Diag on blanking Diag off blanking
Rem : V load is negative during demagnetization T diag

Figure 5 - Active clamp test circuit Figure 6 - Diagnostic delay definitions

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2 00 %
150

100 1 50 %

50 1 00 %

0 5 0%
-5 0 0 50 100 150
0 5 10 15 20 25 30 35

Figure 7 - Rds(on) (mΩ) Vs Vcc (V) Figure 8 - Normalized Rds(on) (%) Vs Tj (oC)

150 10

100

50

0.1

0
0 1 2 3 4 5

Figure 9 - Rds(on) (mΩ) Vs Iout (A) Figure 10 - Max. Iout (A) Vs Load Inductance (uH)

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5 5
Rthja= 20°C/W Rthja= 10°C/W

4 4
1inch² footprint
Rthja= 40°C/W Rthja= 35°C/W

3 3

Free air
2 2 Std. footprint
Rthja= 60°C/W

1 1

0 0
25 50 75 100 125 150 25 50 75 100 125 150

Figure 11a - Max load current (A) Vs Tamb (oC) Figure 11b - Max load current (A) Vs Tamb (oC)
IPS511 IPS511S

1 00 6

5
10

1 3

2
0 .1

0 .0 1 0
-50 0 50 100 150

Figure 12 - Transient Thermal Impedance (oC/W) Figure 13 - Ilim (A) Vs Tj (oC)

Vs Time (S)

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Resistive load 10000

600

1000
I=Imax vs Induct.(see fig.10)
Eon
400 Eoff
100 I=1.5A

10
200

0
0.1
1E+01

1E+02

1E+03

1E+04

1E+05

1E+06
0 1 2 3

Figure 14 - Eon, Eoff (µJ) (A) Vs Iout (A) Figure 15 - Eon (µJ) Vs Load Inductance (µH)
(see Fig. 3)

150 1.00E-03

125
Diag on blanking
100 1.00E-04

75

50
1.00E-05

25
Diag off blanking
0
1.00E-06
0 1 2 3
0 5 10 15 20 25 30 35

Figure 16 - Diag Blanking time (µS) Vs Iout (A) Figure 17 - Icc (mA) Vs Vcc (V)
(resistive load - see Fig. 6)

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150

125

100

75

50

25

0
-50 -25 0 25 50 75 100 125 150

Figure 18 - Iin @ Vin = 5V (µA) Vs Tj (oC)

Case Outline 5 Lead - TO220

IRGB 01-3042 01

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Case Outline 5 Lead - D2PAK (SMD220)

01-3066 00

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Tape & Reel 5 Lead - D2PAK (SMD220)

01-3071 00 / 01-3072 00

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++ 44 (0) 20 8645 8000
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 3/27/2000
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