® TYNx10 Series

STANDARD 10A SCR

Table 1: Main Features A

Symbol Value Unit

IT(RMS) 10 A G

VDRM/VRRM 400, 600 and 800 V K

A
IGT 15 mA

DESCRIPTION K
A
The TYNx10 Silicon Controlled Rectifiers is a high G

performance glass passivated technology. TO-220AB

This general purpose Silicon Controlled Rectifiers Table 2: Order Codes

is designed for power supply up to 400Hz on resis- Part Numbers Marking
tive or inductive load. TYN410RG TYN410
TYN610RG TYN610
TYN810RG TYN810

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C 10 A
IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 6.4 A
Non repetitive surge peak on-state tp = 8.3 ms 105
ITSM Tj = 25°C A
current tp = 10 ms 100
I²t I²t Value for fusing tp = 10 ms Tj = 25°C 50 A2S
Critical rate of rise of on-state current
dI/dt Tj = 125°C 50 A/µs
IG = 100 mA , dIG/dt = 0.1 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
PGM Maximum gate power tp = 20 µs Tj = 125°C 10 W
TYN410 400
VDRM
Repetitive peak off-state voltage TYN610 Tj = 125°C 600 V
VRRM
TYN810 800
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 125
TL Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

February 2006 REV. 2 1/6

TYNx10 Series

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit
IGT MAX. 15 mA
VD = 12 V (D.C.) RL = 33 Ω
VGT MAX. 1.5 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 110°C MIN. 0.2 V
tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs TYP. 2 µs
IH IT = 100 mA Gate open MAX. 30 mA
IL IG = 1.2 x IGT TYP. 50 mA
Linear slope up to:
dV/dt Tj = 110°C MIN. 200 V/µs
VD = 67 % VDRM Gate open
VTM ITM = 20 A tp = 380 µs MAX. 1.6 V
IDRM Tj = 25°C 10 µA
VDRM = VRRM MAX.
IRRM Tj = 110°C 2 mA
tq VD = 67 % VDRM ITM = 20 A VR = 25 V
Tj = 110°C TYP. 70 µs
dITM/dt = 30 A/µs dVD/dt = 50 V/µs

Table 5: Thermal Resistance

Symbol Parameter Value Unit
Rth(j-c) Junction to case (D.C.) 2.5 °C/W
Rth(j-a) Junction to ambient 60 °C/W

Figure 1: Maximum average power dissipation Figure 2: Correlation between maximum

versus average on-state current average power dissipation and maximum
allowable temperature (Tamb and Tlead)

P(W) P(W) Tcase(°C)

12 12 Rth = 6°C/W Rth = 4°C/W Rth = 2°C/W Rth = 0°C/W
α = 180°
10 DC 100
α = 180° 10
α = 120°
α = 90°
8 8 105
α = 60°

6 6 110
α = 30°
4 4 115
360°

2 2 120
IT(AV)(A) α Tamb(°C)
0 0 125
0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140

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 TYNx10 Series

Figure 3: Average on-state current versus case Figure 4: Relative variation of thermal
temperature impedance versus pulse duration

IT(AV)(A) K=[Zth(j-c)/Rth(j-c)]
12 1
Zth(j-c)
D.C.
10

8
α = 180°
Zth(j-a)
6 0.1

2
Tcase(°C) tp(s)
0 0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Figure 5: Relative variation of gate trigger Figure 6: Surge peak on-state current versus
current versus junction temperature number of cycles

IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
ITSM(A)
120

2 100
tp=10ms

IGT 80 One cycle

1.5
Tj initial=25°C

60
IH & IL
1
40

0.5
20

Tj(°C) Number of cycles

0 0
1 10 100 1000
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110

Figure 7: Non-repetitive surge peak on-state Figure 8: On-state characteristics (maximum

current for a sinusoidal pulse with width values)
tp < 10 ms, and corresponding values of I²t

ITSM(A), I2t (A2s) ITM(A)

1000
Tj initial = 25°C

ITSM Tj=max

100

I2t
100
10

Tj=25°C
Tj max.:
Vt0=0.82V
Rd=24mΩ
tp(ms) VTM(V)
10 1
1 2 5 10 0 1 2 3 4 5

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TYNx10 Series

Figure 9: Ordering Information Scheme

TYN 4 10 RG

Standard SCR series

Voltage
4 = 400V
Current
10 = 10A
Packing mode
RG = Tube

Table 6: Product Selector

Voltage (xxx)
Part Numbers Sensitivity Package
400 V 600 V 800V
TYN410RG X
TYN610RG X 15 mA TO-220AB
TYN810RG X

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 TYNx10 Series

Figure 10: TO-220AB Package Mechanical Data

DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
B C
A 15.20 15.90 0.598 0.625
ØI b2
a1 3.75 0.147
L a2 13.00 14.00 0.511 0.551
F
B 10.00 10.40 0.393 0.409
A b1 0.61 0.88 0.024 0.034
I4 b2 1.23 1.32 0.048 0.051
l3 C 4.40 4.60 0.173 0.181
a1 c2 c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
l2
a2 e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
M
ØI 3.75 3.85 0.147 0.151
b1 c1 I4 15.80 16.40 16.80 0.622 0.646 0.661
e
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.

Table 7: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode
TYN410RG TYN410
TYN610RG TYN610 TO-220AB 2.3 g 50 Tube
TYN810RG TYN810

Table 8: Revision History

Date Revision Description of Changes
Sep-2001 1A First issue.
TO-220AB delivery mode changed from bulk to tube.
13-Feb-2006 2
ECOPACK statement added.

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TYNx10 Series

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