TLP731,TLP732

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP731,TLP732
Office Machine
Unit in mm
Household Use Equipment
Solid State Relay
Switching Power Supply

The TOSHIBA TLP731 and TLP732 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP package.
TLP732 is no−base internal connection for high−EMI environments.

• Collector−emitter voltage: 55V (min.)

• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065: 2002
Certificate No. 8877
BS EN60950-1: 2002
TOSHIBA 11−7B1
Certificate No. 8878
Isolation voltage: 4000Vrms (min.) Weight: 0.35 g
• Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009302
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK Pin Configurations (top view)
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “Option (D4)”

7.62mm pich 10.16mm pich

standard type (LF2) type
• Creepage distance : 7.0mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)

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Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
LED

Power dissipation PD 100 mW

Power dissipation derating (Ta ≥ 25°C) ΔPD / °C −1.0 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Collector−base voltage (TLP731) VCBO 80 V
Emitter−collector voltage VECO 7 V
Detector

Emitter−base voltage (TLP731) VEBO 7 V

Collector current IC 50 mA

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.5 mW / °C
Isolation voltage (AC, 1min., R.H.≤ 60%) BVS 4000 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

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Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5V ― ― 10 μA
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Collector−emitter
V(BR)CEO IC = 0.5mA 55 ― ― V
breakdown voltage
Emitter−collector
V(BR)ECO IE = 0.1mA 7 ― ― V
breakdown voltage
Collector−base
V(BR)CBO IC = 0.1mA 80 ― ― V
breakdown voltage (TLP731)
Emitter−base
V(BR)EBO IE = 0.1mA 7 ― ― V
breakdown voltage (TLP731)
Detector

VCE = 24V ― 10 100 nA

Collector dark current ICEO
VCE = 24V, Ta = 85°C ― 2 50 μA
Collector dark current VCE = 24V, Ta = 85°C
ICER ― 0.5 10 μA
(TLP731) RBE = 1MΩ
Collector dark current
ICBO VCB = 10V ― 0.1 ― nA
(TLP731)
DC forward current gain
hFE VCE = 5V, IC = 0.5mA ― 400 ― ―
(TLP731)
Capacitance collector to
CCE V = 0, f = 1MHz ― 10 ― pF
emitter

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 5mA, VCE = 5V 50 ― 600

Current transfer ratio IC / IF %
Rank GB
100 ― 600

IF = 1mA, VCE = 0.4V ― 60 ―

Saturated CTR IC / IF (sat) %
Rank GB 30 ― ―
Base photo−current (TLP731) IPB IF = 5mA, VCB = 5V ― 10 ― μA
IC = 2.4mA, IF = 8mA ― ― 0.4
Collector−emitter saturation
VCE (sat) IC = 0.2mA, IF = 1mA ― 0.2 ― V
voltage
Rank GB ― ― 0.4

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Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance
CS VS = 0, f = 1MHz ― 0.8 ― pF
(input to output)
12 14
Isolation resistance RS VS = 500V 1×10 10 ― Ω
AC, 1 minute 4000 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 2 ―
Fall time tf VCC = 10V, IC = 2mA ― 3 ―
μs
RL = 100Ω
Turn−on time ton ― 3 10
Turn−off time toff ― 3 10
Turn−on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time tS RBE = open ― 15 ― μs
VCC = 5V, IF = 16mA
Turn−off time tOFF ― 25 ―
Turn−on time tON ― 2 ―
RL = 1.9kΩ (Fig.1)
Storage time tS RBE = 220kΩ (TLP731) ― 12 ― μs
VCC = 5V, IF = 16mA
Turn−off time tOFF ― 20 ―

Fig. 1 Switching time test circuit

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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