TLP523,TLP523−2,TLP523−4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

−2, TLP523−
TLP523, TLP523− −4
Unit in mm
Programmable Controllers
DC−Output Module
Solid State Relay

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide

infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in a eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per TOSHIBA 11−5B2
package.
Weight: 0.26 g

· Current transfer ratio: 500% (min.) (IF = 1 mA)

· Isolation voltage: 2500 Vrms (min.)
· Collector−emitter voltage: 55 V (min.)
· Leakage current: 10µA (max.) (Ta = 85°C)
· UL recognized: UL1577, file no. E67349

Pin Configurations (top view)

TLP523 TLP523-2 TLP523-4

1 4 1 8 1 16
TOSHIBA 11−10C4
2 3 2 7 2 15
Weight: 0.54 g

3 6 3 14
1 : Anode
2 : Cathode
3 : Emitter 4 5 4 13
4 : Collector
1, 3 : Anode 5 12
2, 4 : Cathode
5, 7 : Emitter 6 11
6, 8 : Collector
7 10

8 9

TOSHIBA 11−20A3
1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode Weight: 1.1 g
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector

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Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol TLP523-2 Unit
TLP523
TLP523-4
Forward current IF 60 50 mA
Forward current derating ∆IF /°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA /°C
LED

Pulse forward current IFP 1 (100µs pulse, 100pps) A

Reverse voltage VR 5 V
Collector-emitter voltage VCEO 55 V
Emitter-collector valtage VECO 0.3 V
Detector

Collector current IC 150 mA

Collector power dissipation
PC 150 100 mW
(1 circuit)
Collector power dissipation
∆PC /°C -1.5 -1.0 mW /°C
derating (1 circuit (Ta ≥ 25°C))
Operating temperature range Topr -55~100 °C
Storage temperature range Tstg -55~125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total power dissipation PT 250 150 mW
Total power dissipation derating
∆PT /°C -2.5 -1.5 mW /°C
(Ta ≥ 25°C)
Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%) Vrms

(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 20 mA
Operating temperature
Topr -25 ― 85 °C
range

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Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V — — 10 µA
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Collector-emitter
V(BR) CEO IC = 1 mA 55 — — V
breakdown voltage
Detector

VCE = 24 V — 10 200 nA
Collector dark current ICEO
VCE = 24 V, Ta = 85°C — 0.5 10 µA
Capacitance collector
CCE V = 0, f = 1 MHz — 10 — pF
to emitter
Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 500 2000 — %
Collector-emitter
Coupled

VCE(sat) IC = 50 mA, IF = 10 mA — — 1 V
saturation voltage
Capacitance input
CS VS = 0, f = 1 MHz — 0.8 — pF
to output
10 14
Isolation resistance RS VS = 500 V, R.H.≤ 60% 5×10 10 — Ω

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Turn-on time tON VCC = 10 V, RL = 180 Ω — 3 — µs

IF = 16 mA
Turn-off time tOFF — 80 — µs

Switching Time Test Circuit

IF RL
IF IF
VCC
t
OFF
VCE VCE 9V
1V
t
ON

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IF – Ta PC – Ta
100 200

TLP523

Allowable collector power

Allowable forwafd current

160

dissipation PC (mW)
80

TLP523
IF (mA)

60 120
TLP523 -2, -4 TLP523 -2, -4

40 80

20 40

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (℃) Ambient temperature Ta (℃)

IFP – DR IF – VF
5000 100
Pulse width ≤ 100µs Ta = 25℃
3000
50
(mA)

Ta = 25℃
30
1000 (mA)
IFP

500 10
Forward current IF
Pulse forward current

300 5
3
100

1
50
30 0.5
0.3
10
3 10-3 3 10-2 3 10
-1
3 100
0.1
Duty cycle patio DR 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Forward voltage VF (V)

ΔVF / ΔTa – IF IFP – VFP

-3.2 1000

500
coefficient ΔVF / ΔTa (mV / ℃)

-2.8
300
(mA)
Forward voltage temperature

-2.4
100
IFP

-2.0 50
Pulse forward current

30
-1.6

10
-1.2
Pulse width ≤ 10µs
5
Repetitive frequency = 100Hz
-0.8 3
Ta = 25℃

-0.4 1
0.1 0.3 1 3 10 30 0.6 1.0 1.4 1.8 2.2 2.6 3

Forward current IF (mA) Pulse forward voltage VFP (V)

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IC – IF IC – IF
300 300
VCE = 1V VCE = 1.2V
Ta = 25°C Ta = 25°C

100 100
(mA)

(mA)
50 Sample 1 50 Sample 1
IC

IC
30 30
2 2
Collector current

Collector current
3 3

10 10

5 5

3 3

1 1
0.3 1 3 10 30 0.3 1 3 10 30

Forward current IF (mA) Forward current IF (mA)

VCE(sat) – Ta IC – Ta

Test condition Test condition

A : IC=100mA, IF=10mA A : IF =10mA, VCE=1.2V
B : IC=50mA, IF=10mA B : IF =10mA, VCE=1.0V
C : IC=10mA, IF=1mA C : IF =2mA, VCE=1.2V
D : IC=1mA, IF=0.5mA D : IF =2mA, VCE=1.0V
(V)

1.6 E : IF =1mA, VCE=1.2V

F : IF =1mA, VCE=1.0V
Collector-emitter saturation voltage VCE (sat)

140
1.4 Test condition
IC (mA)

A
120
1.2
Test condition A
Collector current

B 100
1.0
B

C
80
0.8

D
0.6 60

C
0.4 40
D

0.2 20
E

F
0 0
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100

Ambient temperature Ta (℃) Ambient temperature Ta (℃)

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IC – VCE IC – VCE
500 300
IF = 10mA Ta = 25℃
300
PC Max.
2mA
Sample 1 100
100
2 50
1mA
50
3 30
(mA)

(mA)
30
PC Max.
IC

IC
10
0.5mA
10
Collector current

Collector current
5
5
3
3

1
1

0.5 0.5

0.3 0.3
IF = 1mA
Ta = 25℃
0.1 0.1
0.1 0.3 1 3 10 30 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

Switching Time Safe Operationg Area

500
VCC = 10V
Ta = 25℃
RL IF 300
10ms※
IF VOUT 90% 1s※
VOUT
10% 10ms※
1s※
t t
ON OFF 100
500
(mA)

300
(μs)

50
IC

t 100ms※
OFF(IF=10mA) t
OFF(IF=1mA) 30
Switching time

100
Collector current

100ms※
50
t DC operating Ta=25℃
30 ON(IF=1mA)
10

10 5
t ※ Single
5 ON(IF=10mA)
3 nonrepetitive
3 pulse
Ta=25℃

1 Ta=60℃
1
30 100 300 1k 3k 10k 0.5 1 3 10 30

Load resistance RL (Ω) Collector-emitter voltage VCE (V)

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 TLP523,TLP523−2,TLP523−4

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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