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2SK1881-L, S: F-III Series

This document provides specifications for an N-channel MOSFET transistor. It includes: 1) Maximum ratings and characteristics such as a drain-source voltage of 60V, continuous drain current of 20A, and on-resistance as low as 0.07 ohms. 2) Electrical characteristics including a drain-source breakdown voltage of 60V, threshold voltage between 1-2.5V, and forward transconductance of 8-15S. 3) Applications including motor control, power amplification, and DC-DC conversion due to its high current, low resistance, and withstanding of high voltages.

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172 views2 pages

2SK1881-L, S: F-III Series

This document provides specifications for an N-channel MOSFET transistor. It includes: 1) Maximum ratings and characteristics such as a drain-source voltage of 60V, continuous drain current of 20A, and on-resistance as low as 0.07 ohms. 2) Electrical characteristics including a drain-source breakdown voltage of 60V, threshold voltage between 1-2.5V, and forward transconductance of 8-15S. 3) Applications including motor control, power amplification, and DC-DC conversion due to its high current, low resistance, and withstanding of high voltages.

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2SK1881-L,S N-channel MOS-FET

F-III Series 60V 0,07Ω 20A 45W

> Features > Outline Drawing


- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance

> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters

> Maximum Ratings and Characteristics > Equivalent Circuit


- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V DS 60 V
Drain-Gate-Voltage (RGS=20KΩ) V DGR 60 V
Continous Drain Current ID 20 A
Pulsed Drain Current I D(puls) 80 A
Gate-Source-Voltage V GS ±20 V
Max. Power Dissipation PD 45 W
Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C

- Electrical Characteristics (TC=25°C), unless otherwise specified


Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 60 V
Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I DSS VDS=60V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS VGS=±20V VDS=0V 10 100 nA
Drain Source On-State Resistance R DS(on) ID=10A VGS=4V 0,07 0,11 Ω
ID=10A VGS=10V 0,05 0,07 Ω
Forward Transconductance g fs ID=10A VDS=25V 8 15 S
Input Capacitance C iss VDS=25V 860 1300 pF
Output Capacitance C oss VGS=0V 300 450 pF
Reverse Transfer Capacitance C rss f=1MHz 100 150 pF
Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=30V 10 15 ns
t r ID=20A 40 60 ns
Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 150 230 ns
t f RGS=25Ω 50 80 ns
Continous Reverse Drain Current I DR 20 A
Pulsed Reverse Drain Current I DRM 80 A
Diode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 1,25 1,8 V
Reverse Recovery Time t rr IF=IDR VGS=0V 60 ns
Reverse Recovery Charge Q rr -dIF/dt=100A/µs Tch=25°C 0,1 µC

- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 125 °C/W
R th(ch-c) channel to case 2,78 °C/W

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

Free Datasheet http://www.Datasheet4U.com


N-channel MOS-FET 2SK1881-L,S
60V 0,07Ω 20A 45W F-III Series
> Characteristics
Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics

↑ 1 ↑ 2 ↑ 3

RDS(ON) [Ω]
ID [A]

ID [A]
VDS [V] → Tch [°C] → VGS [V] →

Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch

↑ 4 ↑ 5 ↑ 6
RDS(ON) [Ω]

gfs [S]

VGS(th) [V]

ID [A] → ID [A] → Tch [°C] →

Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode

↑ 7 ↑ 8 ↑ ↑ 9
C [nF]

VDS [V]

VGS [V]

IF [A]

VDS [V] → Qg [nC] → VSD [V] →

Allowable Power Dissipation vs. TC Safe operation area

↑
Zth(ch-c) [K/W]

Transient Thermal impedance

↑ 10 ↑ 12 11
ID [A]
PD [W]

Tc [°C] → VDS [V] → t [s] →

This specification is subject to change without notice!

Free Datasheet http://www.Datasheet4U.com

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