78M05

TO-252-2L Plastic-Encapsulate Voltage Regulators

Three-terminal positive voltage regulator

Feature TO-252-2L
z Maximum output current
IOM: 0.5 A
z Output voltage
VO: 5V
z Continuous total dissipation
PD: 1.25 W (Ta= 25 ℃ ) 1.IN
2
1 3 2.GND

3.OUT

Parameter Symbol Value Unit

Input Voltage Vi 35 V
Thermal Resistance from Junction to Ambient RθJA 80 ℃/W
Operating Junction Temperature Range TOPR -25~+125 ℃
Storage Temperature Range TSTG -65~+150 ℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter Symbol Test conditions Min Typ Max Unit
25℃ 4.8 5 5.2 V
Output Voltage Vo
7V≤V i≤20V, Io=5mA-350mA -25~125℃ 4.75 5 5.25 V

Io=5mA-0.5A 25℃ 15 100 mV

Load Regulation ΔVo
Io=5mA-200mA 25℃ 5 50 mV
7V≤V i≤25V, Io=200mA 25℃ 3 100 mV
Line Regulation ΔVo
8V≤V i≤25V, Io=200mA 25℃ 1 50 mV
Quiescent Current Iq 25℃ 4.2 6 mA
ΔIq 8V≤V i≤25V, Io=200mA -25~125℃ 0.8 mA
Quiescent Current Change
ΔIq 5mA≤IO≤350mA -25~125℃ 0.5 mA
Output Noise Voltage VN 10Hz≤ f ≤100KHz 25℃ 40 200 μV/Vo
Ripple Rejection RR 8V≤Vi≤18V,f=120Hz,Io=300mA -25~125℃ 62 80 dB
Dropout Voltage Vd Io=350mA 25℃ 2 2.5 V
Short Circuit Current Isc Vi=10V 25℃ 300 mA
Peak Current Ipk 25℃ 0.5 A
* Pulse test.
TYPICAL APPLICATION Vi 1 3 Vo
78M 05

2 Co
Ci
0.1μF
0.33μF

Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
possible to the regulators.
1
High Diode Semiconductor
Typical Characteristics

Output Characteristics Dropout Characteristics

7 5.6
IO=0mA TJ=25℃
6 TJ=25℃
5.2
(V)

(V)
0A
5 I O=
OUTPUT VOLTAGE VO

VO
4.8

OUTPUT VOLTAGE
4 IO=0.2A、0.35A、0.5A
4.4

4.0
2

3.6
1

0 3.2
0 5 10 15 20 25 30 35 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2

INPUT VOLTAGE VIN (V) INPUT VOLTAGE VIN (V)

Quiescent Current Current Cut-off Grid Voltage

5 6
IO=0mA VIN=10V
TJ=25℃ TJ=25℃
5
(mA)

4 Pulsed
(V)
IQ

4
VO
QUIESCENT CURRENT

3
OUTPUT VOLTAGE

2
2

1
1

0 0
0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 2.5

INPUT VOLTAGE VIN (V) OUTPUT CURRENT IO (A)

Output Voltage vs Junction Temperature Power Derating Curve

7 1.50
VIN=10V
6 IO=5mA
1.25
(W)
(V)

5
OUTPUT VOLTAGE VO

PD

1.00
POWER DISSIPATION

0.75

0.50
2

0.25
1

0 0.00
-25 0 25 50 75 100 125 -25 0 25 50 75 100 125

JUNCTION TEMPERATURE TJ (℃ ) JUNCTION TEMPERATURE TJ (℃ )

High Diode Semiconductor 2

TO-252-2L

SYMBOL MIN MAX SYMBOL MIN MAX

A 2.20 2.40 L1 2.90 REF
A1 0.000 0.125 L2 1.40 1.70
b 0.66 0.86 L3 1.60 REF
c 0.46 0.58 L4 0.60 1.00
D 6.50 6.70 Ф 1.10 1.30
D1 5.10 5.46 θ 0° 8°
D2 4.830 REF h 0.00 0.30
E 6.00 6.20 V 5.35 REF
e 2.186 2.386
L 9.80 10.40
Coplanar degrees 0 0.09
Unit ：mm

TO-252-2L

JSHD
JSHD

High Diode Semiconductor 3