UNISONIC TECHNOLOGIES CO.

, LTD
33N25 Preliminary Power MOSFET

33A, 250V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 33N25 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and high switching speed.
The UTC 33N25 is suitable for high voltage synchronous rectifier
and DC/DC converters, etc.

 FEATURES
* RDS(ON) < 80 mΩ @ VGS=10V,ID=33A
RDS(ON) < 80 mΩ @ VGS=6.0V, ID=15A
* Low Gate Charge (Typical 18.5nC)
* High Switching Speed

 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
33N25L-T47-T 33N25G-T47-T TO-247 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

 MARKING

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33N25 Preliminary Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS ±20 V
Continuous
ID 33 A
Drain Current (VGS=10V) TC=25°C
Pulsed IDM 132 A
Single Pulsed Avalanche Energy (Note 2) EAS 918 mJ
Power Dissipation 235 W
PD
Derate above 25°C 1.89 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Starting TJ = 25°C, L = 1.35mH, IAS = 33A, VDD=50V, RG=25Ω.
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
Junction to Case θJC 0.53 °C/W

 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 250 V
Drain-Source Leakage Current IDSS VDS=250V, VGS=0V 1 µA
Gate- Source Leakage Forward VGS=+20V, VDS=0V +100 nA
IGSS
Current Reverse VGS=-20V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
VGS=10V, ID=33A 80 mΩ
Static Drain-Source On-State Resistance RDS(ON)
VGS=6.0V, ID=15A 80 mΩ
DYNAMIC PARAMETERS
Input Capacitance CISS 1250 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 190 pF
Reverse Transfer Capacitance CRSS 45 pF
SWITCHING PARAMETERS
Total Gate Charge at 10V QG 18.5 28 nC
VGS=10V, VDD=50V,
Gate to Source Charge QGS 6.5 nC
ID=33A, IG=1.0mA
Gate to Drain Charge QGD 4.6 nC
Turn-ON Time tON 35 80 ns
Turn-ON Delay Time tD(ON) VDD=50V, ID=33A, VGS=10V, 230 ns
Rise Time tR RGS=16Ω 75 ns
Turn-OFF Delay Time tD(OFF) 120 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD ISD=33A 1.4 V
Notes: 1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration=300µs, Duty cycle ≤2%.

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33N25 Preliminary Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
QG
12V
10V

200nF
50kΩ VDS QGS QGD
300nF
VGS

DUT
3mA

Charge

Gate Charge Test Circuit Gate Charge Waveforms

Resistive Switching Test Circuit Resistive Switching Waveforms

VDS EAS= 1
2 LIAS
2 BVDSS
BVDSS-VDD
RG BVDSS
ID
L IAS

10V ID(t)

tP DUT
VDD VDD VDS(t)

Time
tP

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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33N25 Preliminary Power MOSFET
 TEST CIRCUITS AND WAVEFORMS(Cont.)

DUT +

RG VDS

L
-

ISD
VGS
VDD

Driver

Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

VGS D=
(Driver Gate Pulse Period 10V
)

IFM, Body Diode Forward Current

ISD
(DUT) di/dt

IRM

Body Diode Reverse Current

VDS
(DUT) Body Diode Recovery dv/dt

VSD VDD

Body Diode Forward

Voltage Drop

Peak Diode Recovery dv/dt Test Circuit and Waveforms

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33N25 Preliminary Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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