Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic k a VF ≤ 1.03 V
• High thermal cycling performance 1 2
• Isolated mounting tab IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
case
case
1 cathode (k)
2 anode (a)
tab isolated
1 2 1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29F/BYV29X -300 -400 -500
VRRM Peak repetitive reverse voltage - 300 400 500 V
VR Continuous reverse voltage Ths ≤ 138˚C1 - 300 400 500 V
IF(AV) Average forward current2 square wave; δ = 0.5; - 9 A
Ths ≤ 90 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C
Tj Operating junction temperature - 150 ˚C
1 Ths de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999 1 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance junction to in free air. - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V
IR Reverse current VR = VRRM - 2.0 50 µA
VR = VRRM; Tj = 100 ˚C - 0.1 0.35 mA
Qs Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/µs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V
February 1999 2 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
PF / W BYV29 Ths(max) / C
dI 12 84
I F Vo = 0.89V
F Rs = 0.019 Ohms a = 1.57
dt
10 95
1.9
2.2
t
rr 8 106
2.8
time 4
6 117
4 128
Q 10% 100%
s
2 139
I
R I
rrm 0 150
0 2 4 6 8 10
IF(AV) / A
Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
I trr / ns
F 1000
IF=10 A
100
1A
time
VF
10
V Tj = 25 C
fr
Tj = 100C
VF
1
1 10 100
time dIF/dt (A/us)
Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25˚C and 100˚C
PF / W BYV29 Ths(max) / C Irrm / A
15 67.5 10
Vo = 0.8900 V
Rs = 0.0190 Ohms
D = 1.0 IF=10A
0.5
10 95 1
0.2 IF=1A
0.1
0.1
5 tp 122.5
I tp D=
T
Tj = 25 C
t Tj = 100C
T 0.01
0 150 1 10 100
0 5 10 15
IF(AV) / A -dIF/dt (A/us)
Fig.3. Maximum forward dissipation PF = f(IF(AV)); Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
square wave where IF(AV) =IF(RMS) x √D.
February 1999 3 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
IF / A BYW29 Transient thermal impedance, Zth j-hs (K/W)
30 10
Tj=150 C
Tj=25 C
1
20
0.1
typ max
10
0.01 PD tp tp
D=
T
T t
0 0.001
0 0.5 1 1.5 2 1us 10us 100us 1ms 10ms 100ms 1s 10s
VF / V pulse width, tp (s) BYV29F
Fig.7. Typical and maximum forward characteristic Fig.9. Transient thermal impedance Zth j-hs= f(tp)
IF = f(VF); parameter Tj
Qs / nC
1000
IF = 10 A
100
2A
10
1
1.0 10 100
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C
February 1999 4 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
10.2
Net Mass: 2 g max
5.7 4.4
max 0.9 max
3.2 0.5
3.0 2.9 max
4.4
4.0 7.9
7.5
17
seating max
plane
3.5 max
4.4
not tinned
13.5
min
k a
0.4 M 0.9
0.7
0.55 max
1.3
5.08
top view
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999 5 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm 10.3
max
4.6
Net Mass: 2 g max
3.2
3.0 2.9 max
Recesses (2x) 2.8
2.5 6.4
0.8 max. depth
15.8
15.8 19 seating max
max. max. plane
3 max.
not tinned
3
2.5
13.5
min.
1 2
0.4 M 1.0 (2x)
0.6
2.54 0.9
0.5 0.7
5.08 2.5
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 1999 6 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999 7 Rev 1.400
