DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N5225B to 1N5267B
Voltage regulator diodes
Product specification 1996 Apr 26
Supersedes data of April 1992
Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

FEATURES DESCRIPTION
• Total power dissipation: Low-power voltage regulator diodes in hermetically sealed leaded glass
max. 500 mW SOD27 (DO-35) packages.
• Tolerance series: ±5% The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
• Working voltage range:
nom. 3.0 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage k a

APPLICATIONS MAM239

• Low-power voltage stabilizers or

voltage references. The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF continuous forward current − 250 mA
IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table
Tj = 25 °C prior to surge “Per type”
Ptot total power dissipation Tamb = 50 °C; lead length max.; − 400 mW
note 1
Lead length 8 mm; note 2 − 500 mW
PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W
dissipation Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave; − 10 W
Tj ≤ 55 °C prior to surge
Tstg storage temperature −65 +200 °C
Tj junction temperature −65 +200 °C

Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature ≤ 75 °C.

ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VF forward voltage IF = 200 mA; see Fig.4 1.1 V

1996 Apr 26 2
1996 Apr 26

Philips Semiconductors
Per type

Voltage regulator diodes

Tj = 25 °C; unless otherwise specified.

WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT NON-REPETITIVE PEAK
VOLTAGE RESISTANCE SZ (%/K) CURRENT Cd (pF) at REVERSE REVERSE CURRENT
VZ (V)(1) rdif (Ω) at IZ(2) IZtest (mA) at f = 1 MHz; VOLTAGE IZSM (A)
TYPE No.
at IZtest at IZtest at VR = 0 V tp = 100 µs; Tamb = 25 °C
IR (µA) VR
NOM. MAX. MAX. MAX. MAX. (V) MAX.
1N5225B 3.0 1600 −0.075 20 450 50 1.0 6.0
1N5226B 3.3 1600 −0.070 20 450 25 1.0 6.0
1N5227B 3.6 1700 −0.065 20 450 15 1.0 6.0
1N5228B 3.9 1900 −0.060 20 450 10 1.0 6.0
1N5229B 4.3 2000 ±0.055 20 450 5 1.0 6.0
1N5230B 4.7 1900 ±0.030 20 450 5 1.5 6.0
1N5231B 5.1 1600 ±0.030 20 300 5 2.0 6.0
1N5232B 5.6 1600 +0.038 20 300 5 3.0 6.0
1N5233B 6.0 1600 +0.038 20 300 5 3.5 6.0
1N5234B 6.2 1000 +0.045 20 200 5 4.0 6.0
3

1N5235B 6.8 750 +0.050 20 200 3 5.0 6.0

1N5236B 7.5 500 +0.058 20 150 3 6.0 4.0
1N5237B 8.2 500 +0.062 20 150 3 6.5 4.0
1N5238B 8.7 600 +0.065 20 150 3 6.5 3.5
1N5239B 9.1 600 +0.068 20 150 3 7.0 3.0
1N5240B 10 600 +0.075 20 90 3 8.0 3.0
1N5241B 11 600 +0.076 20 85 2 8.4 2.5

1N5225B to 1N5267B
1N5242B 12 600 +0.077 20 85 1 9.1 2.5
1N5243B 13 600 +0.079 9.5 80 0.5 9.9 2.5
1N5244B 14 600 +0.082 9.0 80 0.1 10.0 2.0
1N5245B 15 600 +0.082 8.5 75 0.1 11.0 2.0

Product specification
1N5246B 16 600 +0.083 7.8 75 0.1 12.0 1.5
1N5247B 17 600 +0.084 7.4 75 0.1 13.0 1.5
1N5248B 18 600 +0.085 7.0 70 0.1 14.0 1.5
1N5249B 19 600 +0.086 6.6 70 0.1 14.0 1.5
1N5250B 20 600 +0.086 6.2 60 0.1 15.0 1.5
1996 Apr 26

Philips Semiconductors
WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE CURRENT NON-REPETITIVE PEAK

Voltage regulator diodes

VOLTAGE RESISTANCE SZ (%/K) CURRENT Cd (pF) at REVERSE REVERSE CURRENT
VZ (V)(1) rdif (Ω) at IZ(2) IZtest (mA) at f = 1 MHz; VOLTAGE IZSM (A)
TYPE No.
at IZtest at IZtest at VR = 0 V tp = 100 µs; Tamb = 25 °C
IR (µA) VR
NOM. MAX. MAX. MAX. MAX. (V) MAX.
1N5251B 22 600 +0.087 5.6 60 0.1 17.0 1.25
1N5252B 24 600 +0.088 5.2 55 0.1 18.0 1.25
1N5253B 25 600 +0.089 5.0 55 0.1 19.0 1.25
1N5254B 27 600 +0.090 4.6 50 0.1 21.0 1.0
1N5255B 28 600 +0.091 4.5 50 0.1 21.0 1.0
1N5256B 30 600 +0.091 4.2 50 0.1 23.0 1.0
1N5257B 33 700 +0.092 3.8 45 0.1 25.0 0.9
1N5258B 36 700 +0.093 3.4 45 0.1 27.0 0.8
1N5259B 39 800 +0.094 3.2 45 0.1 30.0 0.7
1N5260B 43 900 +0.095 3.0 40 0.1 33.0 0.6
1N5261B 47 1000 +0.095 2.7 40 0.1 36.0 0.5
1N5262B 51 1100 +0.096 2.5 40 0.1 39.0 0.4
4

1N5263B 56 1300 +0.096 2.2 40 0.1 43.0 0.3

1N5264B 60 1400 +0.097 2.1 40 0.1 46.0 0.3
1N5265B 62 1400 +0.097 2.0 35 0.1 47.0 0.3
1N5266B 68 1600 +0.097 1.8 35 0.1 52.0 0.25
1N5267B 75 1700 +0.098 1.7 35 0.1 56.0 0.2
Notes

1N5225B to 1N5267B
1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.
2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.

Product specification
Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W
Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W

Note
1. Device mounted on a printed circuit-board without metallization pad.

1996 Apr 26 5
Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

GRAPHICAL DATA

MBG930
103
handbook, full pagewidth

δ=1
Rth j-a
(K/W) 0.75
0.50
0.33
102 0.20

0.10
0.05

0.02
0.01
10 ≤0.001

tp tp
T δ=
T

1
10−1 1 10 102 103 104 tp (ms) 105

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

MBG801 MBG803
103 250
handbook, halfpage handbook, halfpage

PZSM
(W) IF
(mA)
102

125

(1)
10
(2)

1 0
10−1 1 duration (ms) 10 0.5 0.75 VF (V) 1.0

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive
peak reverse power dissipation Fig.4 Forward current as a function of forward
versus duration. voltage; typical values.

1996 Apr 26 6
Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

PACKAGE OUTLINE

ndbook, full pagewidth 0.56

max

1.85 4.25 MLA428 - 1

max 25.4 min max 25.4 min

Dimensions in mm.

Fig.5 SOD27 (DO-35).

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Apr 26 7