DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D049

PDZ-B series
Voltage regulator diodes
Product specification 1998 Apr 23
Supersedes data of 1998 Jan 09
Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

FEATURES DESCRIPTION PINNING

,
• Total power dissipation: Low-power general purpose voltage PIN DESCRIPTION
max. 400 mW regulator diodes in a small plastic
1 cathode
• Small plastic package suitable for SMD SOD323 package.
2 anode
surface mounted design
• Wide variety of voltage ranges:
nom. 2.4 to 36 V (E24 range).

handbook, halfpage
APPLICATIONS 1 2

• General voltage regulation.

Top view MAM387

Fig.1 Simplified outline (SOD323) and symbol.

MARKING

TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING

NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE
PDZ2.4B Z0 PDZ5.1B Z8 PDZ11B ZG PDZ24B ZQ
PDZ2.7B Z1 PDZ5.6B Z9 PDZ12B ZH PDZ27B ZR
PDZ3.0B Z2 PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS
PDZ3.3B Z3 PDZ6.8B ZB PDZ15B ZK PDZ33B ZT
PDZ3.6B Z4 PDZ7.5B ZC PDZ16B ZL PDZ36B ZU
PDZ3.9B Z5 PDZ8.2B ZD PDZ18B ZM
PDZ4.3B Z6 PDZ9.1B ZE PDZ20B ZN
PDZ4.7B Z7 PDZ10B ZF PDZ22B ZP

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IF continuous forward current − 200 mA
IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table 2
Tamb = 25 °C prior to surge
Ptot total power dissipation Tamb = 25 °C; note 1; see Fig.2 − 400 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C

Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

1998 Apr 23 2
Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point 130 K/W
Rth j-a thermal resistance from junction to ambient note 1 340 K/W

Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

ELECTRICAL CHARACTERISTICS
Table 1 Total series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VF forward voltage IF = 10 mA; see Fig.3 0.9 V
IF = 100 mA; see Fig.3 1.1 V
IR reverse current
PDZ2.4B VR = 1 V 50 µA
PDZ2.7B VR = 1 V 20 µA
PDZ3.0B VR = 1 V 10 µA
PDZ3.3B VR = 1 V 5 µA
PDZ3.6B VR = 1 V 5 µA
PDZ3.9B VR = 1 V 3 µA
PDZ4.3B VR = 1 V 3 µA
PDZ4.7B VR = 1 V 2 µA
PDZ5.1B VR = 1.5 V 2 µA
PDZ5.6B VR = 2.5 V 1 µA
PDZ6.2B VR = 3 V 500 nA
PDZ6.8B VR = 3.5 V 500 nA
PDZ7.5B VR = 4 V 500 nA
PDZ8.2B VR = 5 V 500 nA
PDZ9.1B VR = 6 V 500 nA
PDZ10B VR = 7 V 100 nA
PDZ11B VR = 8 V 100 nA
PDZ12B VR = 9 V 100 nA
PDZ13B VR = 10 V 100 nA
PDZ15B VR = 11 V 50 nA
PDZ16B VR = 12 V 50 nA
PDZ18B VR = 13 V 50 nA
PDZ20B VR = 15 V 50 nA
PDZ22B VR = 17 V 50 nA
PDZ24B VR = 19 V 50 nA
PDZ27B VR = 21 V 50 nA
PDZ30B VR = 23 V 50 nA
PDZ33B VR = 25 V 50 nA
PDZ36B VR = 27 V 50 nA

1998 Apr 23 3
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1998 Apr 23

Philips Semiconductors
Table 2 Per type

Voltage regulator diodes

Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE DIFFERENTIAL RESISTANCE TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK
VZ (V) rdif (Ω) SZ (mV/K) Cd (pF) REVERSE CURRENT
TYPE at IZ = 5 mA at IZ = 5 mA at f = 1 MHz; IZSM (A) at tp = 100 µs;
NUMBER (see Figs 4 and 5) VR = 0 Tamb = 25 °C
at IZ at IZ
MIN. MAX. MAX. MAX. TYP. MAX. MAX.
(mA) (mA)
PDZ2.4B 2.43 2.63 1000 0.5 100 5 −1.6 450 8.0
PDZ2.7B 2.69 2.91 1000 0.5 100 5 −2.0 440 8.0
PDZ3.0B 2.85 3.07 1000 0.5 95 5 −2.1 425 8.0
PDZ3.3B 3.32 3.53 1000 0.5 95 5 −2.4 410 8.0
PDZ3.6B 3.60 3.85 500 1.0 90 5 −2.4 390 8.0
PDZ3.9B 3.89 4.16 500 1.0 90 5 −2.5 370 8.0
PDZ4.3B 4.17 4.48 600 1.0 90 5 −2.5 350 8.0
PDZ4.7B 4.55 4.75 600 1.0 90 5 −1.4 325 8.0
PDZ5.1B 4.96 5.20 250 0.5 60 5 0.3 300 5.5
PDZ5.6B 5.48 5.73 100 0.5 50 5 1.9 275 5.5
PDZ6.2B 6.06 6.33 80 0.5 50 5 2.7 250 5.5
4

PDZ6.8B 6.65 6.93 60 0.5 40 5 3.4 215 5.5

PDZ7.5B 7.28 7.60 60 0.5 10 5 4.0 170 3.5
PDZ8.2B 8.02 8.36 60 0.5 10 5 4.6 150 3.5
PDZ9.1B 8.85 9.23 60 0.5 10 5 5.5 120 3.5
PDZ10B 9.77 10.21 60 0.5 10 5 6.4 110 3.5
PDZ11B 10.78 11.22 60 0.5 10 5 7.4 108 3.0
PDZ12B 11.74 12.24 80 0.5 10 5 8.4 105 3.0
PDZ13B 12.91 13.49 80 0.5 10 5 9.4 103 2.5
PDZ15B 14.34 14.98 80 0.5 15 5 11.4 99 2.0
PDZ16B 15.85 16.51 80 0.5 20 5 12.4 97 1.5
PDZ18B 17.56 18.35 80 0.5 20 5 14.4 93 1.5

PDZ-B series
PDZ20B 19.52 20.39 100 0.5 20 5 16.4 88 1.5

Product specification
PDZ22B 21.54 22.47 100 0.5 25 5 18.4 84 1.3
PDZ24B 23.72 24.78 120 0.5 30 5 20.4 80 1.3
PDZ27B 26.19 27.53 150 0.5 40 5 23.4 73 1.0
PDZ30B 29.19 30.69 200 0.5 40 5 26.6 66 1.0
PDZ33B 32.15 33.79 250 0.5 40 5 29.7 60 0.9
PDZ36B 35.07 36.87 300 0.5 60 5 33.0 59 0.8
Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

GRAPHICAL DATA

MBK245 MBG781
500 300
handbook, halfpage handbook, halfpage
Ptot
(mW) IF
400 (mA)

200
300

200
100

100

0 0
0 50 100 150 200 0.6 0.8 VF (V) 1.0
Tamb (°C)

Tj = 25 °C.

Fig.3 Forward current as a function of forward

Fig.2 Power derating curve. voltage; typical values.

MGL273 MGL274
0 10
handbook, halfpage handbook, halfpage
12
SZ SZ
11
(mV/K) 4.3 (mV/K)
10
9.1
−1 5
3.9 8.2
7.5
3.6 6.8
6.2
5.6
5.1
−2 3.3
0
3.0 4.7

2.4
2.7
−3 −5
0 20 40 IZ (mA) 60 0 4 8 12 16 20
IZ (mA)

PDZ2.4B to PDZ4.3B. PDZ4.7B to PDZ12B.

Tj = 25 °C to 150 °C. Tj = 25 °C to 150 °C.

Fig.4 Temperature coefficient as a function Fig.5 Temperature coefficient as a function

of working current; typical values. of working current; typical values.

1998 Apr 23 5
Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

PACKAGE OUTLINE

Plastic surface mounted package; 2 leads SOD323

,
Q

A
A1

c
Lp

HE v M A

D A

1 2

E bp

(1)

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E HE Lp Q v
max.
1.1 + 0.05 0.40 0.25 1.8 1.35 2.7 0.45 0.25
mm 0.2
0.8 − 0.05 0.25 0.10 1.6 1.15 2.3 0.15 0.15

Note
1. The marking bar indicates the cathode.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD323 98-09-14

1998 Apr 23 6
Philips Semiconductors Product specification

Voltage regulator diodes PDZ-B series

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

7
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© Philips Electronics N.V. 1998 SCA57

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Printed in The Netherlands 115104/00/03/pp8 Date of release: 1998 Apr 23 Document order number: 9397 750 03729