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Silicon PNP Power Transistors

This document provides product specifications for the 2SA1673 silicon PNP power transistor. It includes descriptions of the TO-3PML package and pinning, absolute maximum ratings, electrical characteristics like current gain and switching times, and the package outline dimensions. The transistor is intended for audio and general purpose applications.

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roberto carlos martinez narvaez
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94 views4 pages

Silicon PNP Power Transistors

This document provides product specifications for the 2SA1673 silicon PNP power transistor. It includes descriptions of the TO-3PML package and pinning, absolute maximum ratings, electrical characteristics like current gain and switching times, and the package outline dimensions. The transistor is intended for audio and general purpose applications.

Uploaded by

roberto carlos martinez narvaez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon PNP Power Transistors 2SA1673

DESCRIPTION ・
・With TO-3PML package
・Complement to type 2SC4388

APPLICATIONS
・Audio and general purpose

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -180 V

VCEO Collector-emitter voltage Open base -180 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -15 A

IB Base current -4 A

PC Collectorl power dissipation TC=25℃ 85 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon PNP Power Transistors 2SA1673

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -180 V

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -2.0 V

ICBO Collector cut-off current VCB=-180V; IE=0 -10 μA

IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA

hFE DC current gain IC=-3A ; VCE=-4V 50 180

fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz

COB Output capacitance IE=0; VCB=-10V;f=1MHz 500 pF

Switching times

ton Turn-on time 0.60 μs


IC=-10A;RL=4Ω
ts Storage time IB1=-IB2=-1A 0.90 μs
VCC=-40V
tf Fall time 0.20 μs

‹ hFE classifications

O P Y

50-100 70-140 90-180

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JMnic Product Specification

Silicon PNP Power Transistors 2SA1673

PACKAGE OUTLINE

Fig.2 Outline dimensions

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JMnic Product Specification

Silicon PNP Power Transistors 2SA1673

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