Scribd
Upload
18 views3 pages

Silicon NPN Power Transistors

The document provides a product specification for the Silicon NPN Power Transistor 2SC2579, detailing its features such as high power dissipation and current capability, as well as its applications in audio frequency power amplifiers. It includes absolute maximum ratings, characteristics, and pin configuration. The transistor is housed in a TO-3PN package and has specified electrical parameters for performance evaluation.

Uploaded by

gileno duarte
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
18 views3 pages

Silicon NPN Power Transistors

The document provides a product specification for the Silicon NPN Power Transistor 2SC2579, detailing its features such as high power dissipation and current capability, as well as its applications in audio frequency power amplifiers. It includes absolute maximum ratings, characteristics, and pin configuration. The transistor is housed in a TO-3PN package and has specified electrical parameters for performance evaluation.

Uploaded by

gileno duarte
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

JMnic Product Specification

Silicon NPN Power Transistors 2SC2579

DESCRIPTION
With TO-3PN package
High power dissipation
High current capability

APPLICATIONS
For audio frequency power amplifier
applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 8 A

PC Collector power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


JMnic Product Specification

Silicon NPN Power Transistors 2SC2579

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 160 V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE= 160 V

V(BR)EBO Emitter-base breakdown voltage IE=5mA ; IC=0 6 V

ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA

IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA

hFE DC current gain IC=3A ; VCE=4V 50

VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V

fT Transition frequency IC=0.5A ; VCE=10V 20 MHz

2
JMnic Product Specification

Silicon NPN Power Transistors 2SC2579

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance: 0.1mm)

You might also like