PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

Rev. 10 — 16 November 2009 Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number Package PNP complement
NXP JEITA JEDEC
PDTC143XE SOT416 SC-75 - PDTA143XE
PDTC143XEF SOT490 SC-89 - PDTA143XEF
PDTC143XK SOT346 SC-59A TO-236 PDTA143XK
PDTC143XM SOT883 SC-101 - PDTA143XM
PDTC143XS[1] SOT54 SC-43A TO-92 PDTA143XS
PDTC143XT SOT23 - TO-236AB PDTA143XT
PDTC143XU SOT323 SC-70 - PDTA143XU

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features
„ Built-in bias resistors „ Reduces component count
„ Simplifies circuit design „ Reduces pick and place costs
„ 100 mA output current capability

1.3 Applications
„ Digital applications „ Cost-saving alternative for BC847 series
in digital applications
„ Controlling IC inputs „ Switching loads

1.4 Quick reference data

Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IO output current - - 100 mA
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base)
2 output (collector) 2
R1
3 GND (emitter) 1 1
2
R2
3
001aab347 3
006aaa145

SOT54A
1 input (base)
2 output (collector) 2
R1
3 GND (emitter) 1 1
2
R2
3
001aab348 3
006aaa145

SOT54 variant
1 input (base)
2 output (collector) 2
R1
3 GND (emitter) 1 1
2
R2
3
001aab447 3
006aaa145

SOT23; SOT323; SOT346; SOT416; SOT490

1 input (base)
3 3
2 GND (emitter)
R1
3 output (collector) 1

R2

1 2 2
006aaa144
sym007

SOT883
1 input (base)
1 3
2 GND (emitter)
3 R1
3 output (collector) 2 1
Transparent
R2
top view
2
sym007

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 2 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PDTC143XE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC143XEF SC-89 plastic surface mounted package; 3 leads SOT490
PDTC143XK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC143XM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 × 0.6 × 0.5 mm
PDTC143XS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTC143XT - plastic surface mounted package; 3 leads SOT23
PDTC143XU SC-70 plastic surface mounted package; 3 leads SOT323

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking
Table 5. Marking codes
Type number Marking code[1]
PDTC143XE 34
PDTC143XEF 54
PDTC143XK 26
PDTC143XM E2
PDTC143XS TC143X
PDTC143XT *32
PDTC143XU *53

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 3 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 7 V
VI input voltage
positive - +20 V
negative - −7 V
IO output current - 100 mA
ICM peak collector current single pulse; - 100 mA
tp ≤ 1 ms
Ptot total power dissipation Tamb ≤ 25 °C
SOT416 [1] - 150 mW
SOT490 [1][2] - 250 mW
SOT346 [1] - 250 mW
SOT883 [2][3] - 250 mW
SOT54 [1] - 500 mW
SOT23 [1] - 250 mW
SOT323 [1] - 200 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 4 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air
junction to ambient
SOT416 [1] - - 833 K/W
SOT490 [1][2] - - 500 K/W
SOT346 [1] - - 500 K/W
SOT883 [2][3] - - 500 K/W
SOT54 [1] - - 250 K/W
SOT23 [1] - - 500 K/W
SOT323 [1] - - 625 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off VCB = 50 V; IE = 0 A - - 100 nA
current
ICEO collector-emitter VCE = 30 V; IB = 0 A - - 1 μA
cut-off current VCE = 30 V; IB = 0 A; - - 50 μA
Tj = 150 °C
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 600 μA
current
hFE DC current gain VCE = 5 V; IC = 10 mA 50 - -
VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - - 100 mV
saturation voltage
VI(off) off-state input voltage VCE = 5 V; IC = 100 μA - - 0.3 V
VI(on) on-state input voltage VCE = 300 mV; IC = 20 mA 2.5 - - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - 2.5 pF
f = 1 MHz

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 5 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

006aaa178 006aaa179
103 103

hFE (2) (1)

VCEsat
(mV)
(3)
102

102 (2) (1)

10 (3)

1 10
10−1 1 10 102 1 10 102
I C (mA) I C (mA)

VCE = 5 V IC/IB = 20
(1) Tamb = 100 °C (1) Tamb = 100 °C
(2) Tamb = 25 °C (2) Tamb = 25 °C
(3) Tamb = −40 °C (3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector Fig 2. Collector-emitter saturation voltage as a
current; typical values function of collector current; typical values

006aaa180 006aaa181
102 10

VI(on)
(V) VI(off)
(V)
10

(1)
(2) (1) 1
(2)

(3) (3)
1

10−1 10−1
10−1 1 10 102 10−2 10−1 1 10
IC (mA) I C (mA)

VCE = 0.3 V VCE = 5 V

(1) Tamb = −40 °C (1) Tamb = −40 °C
(2) Tamb = 25 °C (2) Tamb = 25 °C
(3) Tamb = 100 °C (3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of Fig 4. Off-state input voltage as a function of
collector current; typical values collector current; typical values

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 6 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

8. Package outline

1.8 0.95 3.1 1.3

1.4 0.60 2.7 1.0

3 0.6
3 0.45 0.2
0.15

1.75 0.9 3.0 1.7

1.45 0.7 2.5 1.3

1 2 1 2
0.30 0.25 0.50 0.26
0.15 0.10 0.35 0.10
1 1.9

Dimensions in mm 04-11-04 Dimensions in mm 04-11-11

Fig 5. Package outline SOT416 (SC-75) Fig 6. Package outline SOT346 (SC-59A/TO-236)

0.62
0.55
0.55 0.50 0.45
0.47 0.46 4.2 0.38
3.6
0.30 3
0.22
0.48
0.40
0.65 1.02 1
0.95
4.8 2
0.30 2.54
4.4 1.27
0.22 2 1 3

0.20 5.2 14.5

0.12 5.0 12.7
0.35
Dimensions in mm 03-04-03 Dimensions in mm 04-11-16

Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92)

0.45
0.38
0.45
4.2 0.38
3.6 4.2
3.6 1.27
0.48
0.40
3 max
1 2.5 0.48
max 0.40
1
4.8 2
5.08 4.8 2
4.4 2.54
4.4 1.27
2.54 3
3

5.2 14.5 5.2 14.5

5.0 12.7 5.0 12.7

Dimensions in mm 04-06-28 Dimensions in mm 05-01-10

Fig 9. Package outline SOT54A Fig 10. Package outline SOT54 variant

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 7 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

3.0 1.1 2.2 1.1

2.8 0.9 1.8 0.8

3 3 0.45
0.15
0.45
0.15
2.5 1.4 2.2 1.35
2.1 1.2 2.0 1.15

1 2 1 2
0.48 0.15 0.4 0.25
0.38 0.09 0.3 0.10
1.9 1.3

Dimensions in mm 04-11-04 Dimensions in mm 04-11-04

Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70)

1.7 0.8
1.5 0.6

3 0.5
0.3

1.7 0.95
1.5 0.75

1 2
0.33 0.2
0.23 0.1
1

Dimensions in mm 98-10-23

Fig 13. Package outline SOT490 (SC-89)

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 8 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

9. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 4000 5000 10000
PDTC143XE SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135
PDTC143XEF SOT490 4 mm pitch, 8 mm tape and reel - -115 - -
PDTC143XK SOT346 4 mm pitch, 8 mm tape and reel -115 - - -135
PDTC143XM SOT883 2 mm pitch, 8 mm tape and reel - - - -315
PDTC143XS SOT54 bulk, straight leads - - -412 -
SOT54A tape and reel, wide pitch - - - -116
tape ammopack, wide pitch - - - -126
SOT54 variant bulk, delta pinning - - -112 -
PDTC143XT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235
PDTC143XU SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135

[1] For further information and the availability of packing methods, see Section 12.

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 9 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

10. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC143X_SER_10 20091116 Product data sheet - PDTC143X_SER_9
Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTC143X_SER_9 20050726 Product data sheet - PDTC143X_SERIES_8
PDTC143X_SERIES_8 20040806 Product specification - PDTC143X_SERIES_7
PDTC143X_SERIES_7 20040323 Product specification - PDTC143X_SERIES_6
PDTC143X_SERIES_6 20040112 Product specification - PDTC143X_SERIES_5
PDTC143X_SERIES_5 20031112 Product specification - PDTC143X_SERIES_4
PDTC143X_SERIES_4 20030910 Product specification - PDTC143X_SERIES_3
PDTC143X_SERIES_3 20030410 Product specification - PDTC143XE_2
PDTC143XK_1
PDTC143XT_1
PDTC143XE_2 19990521 Product specification - PDTC143XE_1
PDTC143XE_1 19980529 Product specification - -
PDTC143XK_1 20020115 Product specification - -
PDTC143XT_1 19990420 Product specification - -

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 10 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

11. Legal information

11.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these
modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no
representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the
information included herein and shall have no liability for the consequences of specified use without further testing or modification.
use of such information. Limiting values — Stress above one or more limiting values (as defined in
Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC 60134) may cause permanent
with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of
for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the
full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting
sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability.
office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold
full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
11.3 Disclaimers explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
General — Information in this document is believed to be accurate and terms and conditions, the latter will prevail.
reliable. However, NXP Semiconductors does not give any representations or
No offer to sell or license — Nothing in this document may be interpreted or
warranties, expressed or implied, as to the accuracy or completeness of such
construed as an offer to sell products that is open for acceptance or the grant,
information and shall have no liability for the consequences of use of such
conveyance or implication of any license under any copyrights, patents or
information.
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
Export control — This document as well as the item(s) described herein
changes to information published in this document, including without
may be subject to export control regulations. Export might require a prior
limitation specifications and product descriptions, at any time and without
authorization from national authorities.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof. Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
Suitability for use — NXP Semiconductors products are not designed,
document, and as such is not complete, exhaustive or legally binding.
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 10 — 16 November 2009 11 of 12

NXP Semiconductors PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 5
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
11.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Contact information. . . . . . . . . . . . . . . . . . . . . 11
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTC143X_SER_10