PDTA124E series

PNP resistor-equipped transistors;

R1 = 22 k, R2 = 22 k
Rev. 8 — 25 November 2011 Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic
packages.

Table 1. Product overview

Type number Package NPN Package
NXP JEITA JEDEC complement configuration

PDTA124EE SOT416 SC-75 - PDTC124EE ultra small

PDTA124EM SOT883 SC-101 - PDTC124EM leadless ultra small
PDTA124ET SOT23 - TO-236AB PDTC124ET small
PDTA124EU SOT323 SC-70 - PDTC124EU very small

1.2 Features and benefits

 100 mA output current capability  Reduces component count
 Built-in bias resistors  Reduces pick and place costs
 Simplifies circuit design  AEC-Q101 qualified

1.3 Applications
 Digital applications in automotive and  Cost-saving alternative for BC847/857
industrial segments series in digital applications
 Control of IC inputs  Switching loads

1.4 Quick reference data

Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IO output current - - 100 mA
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23; SOT323; SOT416
1 input (base)
3 3
2 GND (emitter)
R1
3 output (collector) 1

R2

1 2 2
006aaa144
sym003

SOT883
1 input (base)
1 3
2 GND (emitter) 3 R1
3 output (collector) 2 1
Transparent
R2
top view
2
sym003

3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PDTA124EE SC-75 plastic surface-mounted package; 3 leads SOT416

body 1.0  0.6  0.5 mm

PDTA124EM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883

PDTA124ET - plastic surface-mounted package; 3 leads SOT23

PDTA124EU SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking
Table 5. Marking codes
Type number Marking code[1]
PDTA124EE 05
PDTA124EM DH
PDTA124ET *05
PDTA124EU *05

[1] * = placeholder for manufacturing site code

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 2 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +10 V
negative - 40 V
IO output current - 100 mA
100
tp  1 ms
ICM peak collector current single pulse; - mA

Ptot total power dissipation Tamb  25 C

PDTA124EE (SOT416) [1][2] - 150 mW
PDTA124EM (SOT883) [2][3] - 250 mW
PDTA124ET (SOT23) [1] - 250 mW
PDTA124EU (SOT323) [1] - 200 mW
Tj junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 3 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

006aac778
300

(1)
Ptot
(mW)

(2)
200

(3)

100

0
-75 -25 25 75 125 175
Tamb (°C)

(1) SOT23; FR4 PCB, standard footprint

SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves

6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air
to ambient
PDTA124EE (SOT416) [1][2] - - 830 K/W
PDTA124EM (SOT883) [2][3] - - 500 K/W
PDTA124ET (SOT23) [1] - - 500 K/W
PDTA124EU (SOT323) [1] - - 625 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 4 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

006aac781
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
0.2
102
0.1
0.05

0.02
0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA124EE (SOT416); typical values

006aac782
103

Zth(j-a) duty cycle = 1

(K/W)
0.75
0.5
102 0.33
0.2

0.1
0.05

10 0.02
0.01

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, 70 m copper strip line

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA124EM (SOT883); typical values

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 5 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

006aac779
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
102 0.2

0.1
0.05

0.02 0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA124ET (SOT23); typical values

006aac780
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.5
0.33
102 0.2

0.1
0.05

0.02
0.01
10

1
10-5 10-4 10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA124EU (SOT323); typical values

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 6 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

7. Characteristics

Tamb = 25 C unless otherwise specified.

Table 8. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off VCB = 50 V; IE = 0 A - - 100 nA
current
ICEO collector-emitter VCE = 30 V; IB = 0 A - - 100 nA
cut-off current VCE = 30 V; IB = 0 A; 5 A
Tj = 150 C
- -

IEBO emitter-base cut-off VEB = 5 V; IC = 0 A - - 180 A

current
hFE DC current gain VCE = 5 V; IC = 5 mA 60 - -
VCEsat collector-emitter IC = 10 mA; IB = 0.5 mA - - 150 mV
saturation voltage
VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 1.1 0.8 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; - - 3 pF
f = 1 MHz
fT transition frequency VCE = 5 V; IC = 10 mA; [1] - 180 - MHz
f = 100 MHz

[1] Characteristics of built-in transistor

006aac800 006aac801
103 -1

hFE
(1)
(2) VCEsat
(3) (V)
102

-10-1
(1)

(2)
10
(3)

1 -10-2
-10-1 -1 -10 -102 -10-1 -1 -10 -102
IC (mA) IC (mA)

VCE = 5 V IC/IB = 20
(1) Tamb = 100 C (1) Tamb = 100 C
(2) Tamb = 25 C (2) Tamb = 25 C
(3) Tamb = 40 C (3) Tamb = 40 C
Fig 6. DC current gain as a function of collector Fig 7. Collector-emitter saturation voltage as a
current; typical values function of collector current; typical values

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Product data sheet Rev. 8 — 25 November 2011 7 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

006aac802 006aac803
-10 -10

(1)
VI(on) VI(off)
(V) (2) (V)
(3) (1)
(2)
-1 -1 (3)

-10-1 -10-1
-10-1 -1 -10 -102 -10-1 -1 -10
IC (mA) IC (mA)

VCE = 0.3 V VCE = 5 V

(1) Tamb = 40 C (1) Tamb = 40 C
(2) Tamb = 25 C (2) Tamb = 25 C
(3) Tamb = 100 C (3) Tamb = 100 C
Fig 8. On-state input voltage as a function of Fig 9. Off-state input voltage as a function of
collector current; typical values collector current; typical values

006aac804 006aac763
6 103

Cc
(pF)
fT
(MHz)
4

102

0 10
0 -10 -20 -30 -40 -50 -10-1 -1 -10 -102
VCB (V) IC (mA)

f = 1 MHz; Tamb = 25 C VCE = 5 V; Tamb = 25 C

Fig 10. Collector capacitance as a function of Fig 11. Transition frequency as a function of collector
collector-base voltage; typical values current; typical values of built-in transistor

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 8 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

9. Package outline

1.8 0.95 0.62

1.4 0.60 0.55
0.55 0.50
0.47 0.46
3 0.45
0.15
0.30 3
0.22

1.75 0.9
1.45 0.7 0.65 1.02
0.95

0.30
0.22 2 1
1 2
0.30 0.25
0.15 0.10 0.20
1 0.12
0.35
Dimensions in mm 04-11-04 Dimensions in mm 03-04-03

Fig 12. Package outline PDTA124EE (SOT416/SC-75) Fig 13. Package outline PDTA124EM (SOT883/SC-101)

3.0 1.1 2.2 1.1

2.8 0.9 1.8 0.8

3 3 0.45
0.15
0.45
0.15
2.5 1.4 2.2 1.35
2.1 1.2 2.0 1.15

1 2 1 2
0.48 0.15 0.4 0.25
0.38 0.09 0.3 0.10
1.9 1.3

Dimensions in mm 04-11-04 Dimensions in mm 04-11-04

Fig 14. Package outline PDTA124ET (SOT23) Fig 15. Package outline PDTA124EU (SOT323/SC-70)

PDTA124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 8 — 25 November 2011 9 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

10. Packing information

Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 5000 10000
PDTA124EE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
PDTA124EM SOT883 2 mm pitch, 8 mm tape and reel - - -315
PDTA124ET SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTA124EU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

2.2

1.7

solder lands

solder resist
0.85 1 2
solder paste
0.5
(3×) occupied area

Dimensions in mm
0.6
(3×)
1.3 sot416_fr

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint PDTA124EE (SOT416/SC-75)

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Product data sheet Rev. 8 — 25 November 2011 10 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

1.3

0.7 R0.05 (12×)

solder lands

solder resist
0.9 0.6 0.7

0.25 solder paste

(2×)
occupied area

0.3
0.3 Dimensions in mm
(2×)
0.4
0.4
(2×)
sot883_fr

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering footprint PDTA124EM (SOT883/SC-101)

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Product data sheet Rev. 8 — 25 November 2011 11 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot023_fr

Fig 18. Reflow soldering footprint PDTA124ET (SOT23)

2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig 19. Wave soldering footprint PDTA124ET (SOT23)

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Product data sheet Rev. 8 — 25 November 2011 12 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

2.65

1.85

1.325
solder lands

2 solder resist

0.6 3 solder paste

2.35 1.3
(3×)

0.5 occupied area

1
(3×)
Dimensions in mm

0.55
(3×) sot323_fr

Fig 20. Reflow soldering footprint PDTA124EU (SOT323/SC-70)

4.6

2.575
1.425
(3×)
solder lands

solder resist

occupied area

3.65 2.1 1.8 Dimensions in mm

09 preferred transport
(2×) direction during soldering

sot323_fw

Fig 21. Wave soldering footprint PDTA124EU (SOT323/SC-70)

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Product data sheet Rev. 8 — 25 November 2011 13 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

12. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTA124E_SER v.8 20111125 Product data sheet - PDTA124E_SERIES v.7
Modifications: • The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type numbers PDTA124EEF, PDTA124EK and PDTA124ES removed.
• Section 1 “Product profile”: updated
• Section 3 “Ordering information”: added
• Section 4 “Marking”: updated
• Figure 1 to 11: added
• Section 6 “Thermal characteristics”: updated
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to
VI(off) off-state input voltage, ICEO updated, fT added
• Section 8 “Test information”: added
• Section 9 “Package outline”: superseded by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PDTA124E_SERIES v.7 20040805 Product data sheet - PDTA124E_SERIES v.6
PDTA124E_SERIES v.6 20030414 Product specification - -

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Product data sheet Rev. 8 — 25 November 2011 14 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

13. Legal information

13.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no
use of such information. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended Customers are responsible for the design and operation of their applications
for quick reference only and should not be relied upon to contain detailed and and products using NXP Semiconductors products, and NXP Semiconductors
full information. For detailed and full information see the relevant full data accepts no liability for any assistance with applications or customer product
sheet, which is available on request via the local NXP Semiconductors sales design. It is customer’s sole responsibility to determine whether the NXP
office. In case of any inconsistency or conflict with the short data sheet, the Semiconductors product is suitable and fit for the customer’s applications and
full data sheet shall prevail. products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
Product specification — The information and data provided in a Product design and operating safeguards to minimize the risks associated with their
data sheet shall define the specification of the product as agreed between applications and products.
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however, NXP Semiconductors does not accept any liability related to any default,
shall an agreement be valid in which the NXP Semiconductors product is damage, costs or problem which is based on any weakness or default in the
deemed to offer functions and qualities beyond those described in the customer’s applications or products, or the application or use by customer’s
Product data sheet. third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
13.3 Disclaimers the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.

Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in
be accurate and reliable. However, NXP Semiconductors does not give any the Absolute Maximum Ratings System of IEC 60134) will cause permanent
representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper)
completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in
consequences of use of such information. the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
In no event shall NXP Semiconductors be liable for any indirect, incidental,
repeated exposure to limiting values will permanently and irreversibly affect
punitive, special or consequential damages (including - without limitation - lost
the quality and reliability of the device.
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purchase of NXP Semiconductors products by customer.
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safety-critical systems or equipment, nor in applications where failure or authorization from competent authorities.

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Product data sheet Rev. 8 — 25 November 2011 15 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this
13.4 Trademarks
document, and as such is not complete, exhaustive or legally binding. Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

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Product data sheet Rev. 8 — 25 November 2011 16 of 17

NXP Semiconductors PDTA124E series
PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2011. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 November 2011
Document identifier: PDTA124E_SER
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