UNISONIC TECHNOLOGIES CO.

, LTD
4N60 Power MOSFET

4 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET

„ DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 15 nC ) *Pb-free plating product number: 4N60L
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL

2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
4N60-x-TA3-T 4N60L-x-TA3-T TO-220 G D S Tube
4N60-x-TF3-T 4N60L-x-TF3-T TO-220F G D S Tube
4N60-x-TM3-T 4N60L -x-TM3-T TO-251 G D S Tube
4N60-x-TN3-R 4N60L -x-TN3-R TO-252 G D S Tape Reel
4N60-x-TN3-T 4N60L -x-TN3-T TO-252 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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4N60 Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
4N60-A 600 V
Drain-Source Voltage VDSS
4N60-B 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 1) IAR 4.4 A
Continuous Drain Current TC = 25°C ID 4.0 A
Pulsed Drain Current (Note 1) IDM 16 A
Single Pulsed (Note 2) EAS 260 mJ
Avalanche Energy
Repetitive (Note 1) EAR 10.6 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
TO-220 106
TO-220F 36
Power Dissipation PD W
TO-251 50
TO-252 50
Junction Temperature TJ +150 °С
Operating Temperature TOPR -55 ~ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-220 62.5
TO-220F 62.5
Junction-to-Ambient θJA ℃/W
TO-251 83
TO-252 83
TO-220 1.18
TO-220F 3.47
Junction-to-Case θJc ℃/W
TO-251 2.5
TO-252 2.5

„ ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
4N60-A 600 V
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA
4N60-B 650 V
Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 10 μA
Forward VGS = 30 V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30 V, VDS = 0 V -100 nA
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C 0.6 V/°С
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A 2.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 520 670 pF
Output Capacitance COSS VDS = 25 V, VGS = 0 V, f = 1MHz 70 90 pF
Reverse Transfer Capacitance CRSS 8 11 pF

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4N60 Power MOSFET

„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 13 35 ns
Turn-On Rise Time tR VDD = 300V, ID = 4.0A, RG = 25Ω 45 100 ns
Turn-Off Delay Time tD(OFF) (Note 4, 5) 25 60 ns
Turn-Off Fall Time tF 35 80 ns
Total Gate Charge QG 15 20 nC
VDS= 480V,ID= 4.0A, VGS= 10 V
Gate-Source Charge QGS 3.4 nC
(Note 4, 5)
Gate-Drain Charge QGD 7.1 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 V
Maximum Continuous Drain-Source Diode
IS 4.4 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 17.6 A
Forward Current
Reverse Recovery Time tRR VGS = 0 V, IS = 4.4 A, 250 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/μs (Note 4) 1.5 μC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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4N60 Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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4N60 Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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4N60 Power MOSFET

„ TYPICAL CHARACTERISTICS

Breakdown Voltage Variation vs. On-Resistance Junction Temperature

Temperature
1.2 3.0
Drain-Source Breakdown Voltage,

2.5

Drain-Source On-Resistance,
1.1

RDS(ON) (Normalized) (Ω)

BVDSS (Normalized) (V)

2.0

1.0 1.5

1.0
0.9 Note: Note:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=4A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction Temperature, TJ (°С) Junction Temperature, TJ (°С)

On-State Characteristics Transfer Characteristics

VGS
10 Top: 10V 10
9V
8V
7V
6V
5.5V 25°С
5 V Bottorm:5.0V

1 5.0V
150°С
1

0.1
Notes:
Notes:
1. 250µs Pulse Test
1. VDS=50V
2. TC=25°С 2. 250µs Pulse Test
0.1
0.1 1 10 2 4 6 8 10
Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

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4N60 Power MOSFET
„ TYPICAL CHARACTERISTICS(Cont.)

Gate-Source Voltage, VGS (V)

Capacitance (pF)
Thermal Response, θJC (t)

PD (w)

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4N60 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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