UNISONIC TECHNOLOGIES CO.
, LTD
70N06 Power MOSFET
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 70N06 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching 1
speed, low thermal resistance, usually used at telecom and TO-262
computer application.
FEATURES
* RDS(ON) = 15mΩ@VGS = 10 V
* Ultra low gate charge ( typical 90 nC ) 1
* Low reverse transfer Capacitance ( CRSS = typical 80 pF ) TO-263
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
70N06L-TA3-T 70N06G-TA3-T TO-220 G D S Tube
70N06L-T2Q-T 70N06G-T2Q-T TO-262 G D S Tube
70N06L-TQ2-T 70N06G-TQ2-T TO-263 G D S Tube
70N06L-TQ2-R 70N06G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
70N06L-TA3-T
(1) Packing Type (1) R: Tape Reel, T: Tube
(2) Package Type (2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263
(3) Lead Plating (3) G: Halogen Free, L: Lead Free
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70N06 Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
TC = 25°C 70 A
Continuous Drain Current ID
TC = 100°C 56 A
Drain Current Pulsed (Note 2) IDM 280 A
Single Pulsed (Note 3) EAS 600 mJ
Avalanche Energy
Repetitive (Note 2) EAR 20 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns
Power Dissipation PD 200 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repeativity rating: pulse width limited by junction temperature
L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C
ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62 °C/W
Junction to Case θJC 1.2 °C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V
Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 1 μA
Forward VGS = 20V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -20V, VDS = 0 V -100 nA
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 1mA, Referenced to 25°C 0.08 V/°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 35 A 12 15 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 3300 pF
VGS = 0 V, VDS = 25 V
Output Capacitance COSS 530 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 80 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 12 ns
Turn-On Rise Time tR VDD = 30V, VGS=10V,ID =70 A 79 ns
Turn-Off Delay Time tD(OFF) (Note 1, 2) 80 ns
Turn-Off Fall Time tF 52 ns
Total Gate Charge QG 90 140 nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge QGS 20 35 nC
ID = 48A (Note 1, 2)
Gate-Drain Charge (Miller Charge) QGD 30 45 nC
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70N06 Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A 1.4 V
Maximum Continuous Drain-Source Diode
IS 70
Forward Current
A
Maximum Pulsed Drain-Source Diode
ISM 280
Forward Current
Reverse Recovery Time tRR VGS = 0 V, IS = 70A 90 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/μs 300 μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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70N06 Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T. +
VDS
- L
RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test
1A Peak Diode Recovery dv/dt Test Circuit
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.) VDD
Body Diode Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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70N06 Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS VDS
90%
VGS VDD
RG
10%
D.U.T. VGS
10V
tD(ON) tD(OFF)
Pulse Width≤1μs
tR tF
Duty Factor≤0.1%
Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms
VGS
QG
Same Type 10V
50kΩ as D.U.T.
12V
0.2μF 0.3μF
VDS QGS QGD
VGS
DUT
1mA
Charge
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
L
VDS
R
VDD
G
10V D.U.T.
tp
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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Drain Current, ID (A)
Capacitance (pF) Drain-Source On-Resistance, RDS(ON) (mΩ)
70N06
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TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Reverse Drain Current, ISD (A)
Gate-to-Source Voltage, VGS (V) Drain Current, ID (A)
1 50
25 °С
°С
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Power MOSFET
Thermal Response, ZθJC (t) Drain Current , ID,(A) Drain-Source Breakdown Voltage,
BVDSS(Normalized) (V)
70N06
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TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Drain-Source On-Resistance, RDS(ON),
Drain Current, ID (A) (Normalized) (Ω)
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QW-R502-089.C
Power MOSFET
70N06 Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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