UNISONIC TECHNOLOGIES CO.
, LTD
8N70 Power MOSFET
8A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N70 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with minimum
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode.
FEATURES
* RDS(ON) ≤ 1.4Ω @ VGS=10V, ID=4.0A
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
8N70L-TA3-T 8N70G-TA3-T TO-220 G D S Tube
8N70L-TF1-T 8N70G-TF1-T TO-220F1 G D S Tube
8N70L-TF3-T 8N70G-TF3-T TO-220F G D S Tube
8N70L-TQ2-T 8N70G-TQ2-T TO-263 G D S Tube
8N70L-TQ2-R 8N70G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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8N70 Power MOSFET
MARKING
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8N70 Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 700 V
Gate-Source Voltage VGSS ±30 V
TC=25°C 8 A
Continuous ID
Drain Current TC=100°C 4.8 A
Pulsed (Note 5) IDM 32 A
Repetitive (Note 2) IAR 8 A
Avalanche Current
Repetitive (Note 3) IAS 8 A
Single Pulsed (Note 3) EAS 230 mJ
Avalanche Energy
Repetitive (Note 2) EAR 11.6 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns
Power Dissipation TO-220/TO-263 147
PD W
(TC=25°C) TO-220F/TO-220F1 49
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 7.74mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
5. Limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
TO-220 0.85
Junction to Case TO-263 θJC 0.85 (Note) °C/W
TO-220F/TO-220F1 2.55
Note: Urface mounted on FR4 board t ≤10 sec.
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8N70 Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 700 V
VDS=700V, VGS=0V 10 µA
Drain-Source Leakage Current IDSS
VDS=560V, TC=125°С 100 µA
Forward VGS=+30V, VDS=0V +10 nA
Gate-Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -10 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.0A 1.2 1.4 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 1100 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz 105 pF
Reverse Transfer Capacitance CRSS 19 pF
SWITCHING PARAMETERS
Total Gate Charge QG 33 nC
VDS=100V, VGS=10V, ID=8A
Gate to Source Charge QGS 6 nC
IG=1mA (Note 1, 2)
Gate to Drain Charge QGD 10 nC
Turn-ON Delay Time tD(ON) 15 ns
Rise Time tR VDD=300V, VGS=10V, ID=10A, 17 ns
Turn-OFF Delay Time tD(OFF) RG=25Ω, (Note 1, 2) 110 ns
Fall-Time tF 47 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS 8 A
Forward Current Integral reverse diode in the
Maximum Pulsed Drain-Source Diode MOSFET
ISM 32 A
Forward Current
Drain-Source Diode Forward Voltage VSD IS=8A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time trr 380 ns
IS=8A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge Qrr 4.7 µC
Notes: 1. Essentially independent of operating temperature.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
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8N70 Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON) tD(OFF)
tR tF
Switching Test Circuit Switching Waveforms
VGS
QG
10V
QGS QGD
Charge
Gate Charge Test Circuit Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp Time
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
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8N70 Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.) VDD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8N70 Power MOSFET
TYPICAL CHARACTERISTICS
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8N70 Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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8N70 Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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