UNISONIC TECHNOLOGIES CO.
, LTD
18N50 Power MOSFET
18A, 500V N-CHANNEL
POWER MOSFET
1 1
TO-230 TO-220F1
DESCRIPTION
The UTC 18N50 is an N-channel enhancement mode
power MOSFET using UTC’s advanced planar stripe and
DMOS technology to provide perfect performance.
This technology can withstand high energy pulse in the
avalanche and commutation mode. It can provide minimum 1 1
on-state resistance and high switching speed.
This device is generally applied in active power factor TO-220F2 TO-220
correction and high efficient switched mode power supplies.
FEATURES
* RDS(ON)=0.32Ω @ VGS=10V
* High switching speed
1 1
* Typically 45nC low gate charge
* 100% avalanche tested TO-3P TO-263
* Typically 25pF low CRSS
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
18N50L-TC3-T 18N50G-TC3-T TO-230 G D S Tube
18N50L-TF1-T 18N50G-TF1-T TO-220F1 G D S Tube
18N50L-TF2-T 18N50G-TF2-T TO-220F2 G D S Tube
18N50L-TA3-T 18N50G-TA3-T TO-220 G D S Tube
18N50L-T3P-T 18N50G-T3P-T TO-3P G D S Tube
18N50L-TQ2-T 18N50G-TQ2-T TO-263 G D S Tube
18N50L-TQ2-R 18N50G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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18N50 Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
Continuous ID 18 A
Drain Current
Pulsed (Note 2) IDM 72 (Note 5) A
Single Pulsed (Note 3) EAS 945 mJ
Avalanche Energy
Repetitive (Note 2) EAR 23.5 mJ
Avalanche Current (Note 2) IAR 18 A
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220F1 38.5
TO-220F2 40.5
Power Dissipation TO-220/TO-263 PD W
235
TO-230
TO-3P 277
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220F1/TO-220F2
Junction to Ambient TO-220/TO-263 θJA 62.5 °C/W
TO-230/TO-3P
TO-220F1 3.3
TO-220F2 3.0
Junction to Case TO-220/TO-263 θJc °C/W
0.53
TO-230
TO-3P 0.45
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18N50 Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 500 V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C 0.5 V/°C
VDS=500V, VGS=0V 1 µA
Drain-Source Leakage Current IDSS
VDS=400V, TC=125°C 10 µA
Forward VGS = 30 V, VDS = 0 V 100
Gate-Source Leakage Current IGSS nA
Reverse VGS = -30 V, VDS = 0 V -100
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=9A 0.24 0.32 Ω
Forward Transconductance gFS VDS=40V, ID=9A (Note 1) 25 S
DYNAMIC PARAMETERS
Input Capacitance CISS 2200 2860 pF
Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz 330 430 pF
Reverse Transfer Capacitance CRSS 25 40 pF
SWITCHING PARAMETERS
Total Gate Charge QG 45 60 nC
VDS=400V, VGS=10V, ID=18A
Gate-Source Charge QGS 12.5 nC
(Note 1,2)
Gate-Drain Charge QGD 19 nC
Turn-ON Delay Time tD(ON) 55 120 ns
Turn-ON Rise Time tR VDD=250V, ID=18A, 165 340 ns
Turn-OFF Delay Time tD(OFF) RG=25Ω (Note 1,2) 95 200 ns
Turn-OFF Fall Time tF 90 190 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 18 A
Maximum Body-Diode Pulsed Current ISM 72 A
Drain-Source Diode Forward Voltage VSD IS =18A, VGS=0V 1.4 V
Body Diode Reverse Recovery Time trr VGS=0V, IS=18A, 500 ns
Body Diode Reverse Recovery Charge QRR dIF/dt=100A/μs (Note 1) 5.4 μC
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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18N50 Power MOSFET
TEST CIRCUITS AND WAVEFORMS
DUT +
RG VDS
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
VGS D=
Gate Pulse Period 10V
(Driver)
IFM, Body Diode Forward Current
ISD
(DUT) di/dt
IRM
Body Diode Reverse Current
VDS
(DUT) Body Diode Recovery dv/dt
VSD VDD
Body Diode Forward
Voltage Drop
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18N50 Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge Test Circuit Gate Charge Waveforms
Resistive Switching Test Circuit Resistive Switching Waveforms
VDS EAS= 1
2 LIAS
2 BVDSS
BVDSS-VDD
RG BVDSS
ID
L IAS
10V ID(t)
tP DUT
VDD VDD VDS(t)
Time
tP
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
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18N50 Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)
Drain Current, ID (A)
Drain Current, ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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