UNISONIC TECHNOLOGIES CO.

, LTD
UT7317 Power MOSFET

DUAL N-CHANNEL
ENHANCEMENT MODE

„ FEATURES
* 30V/6A
* Low RDS(ON)
* Reliable and Rugged SOP-8

„ SYMBOL
(7) (8) (5) (6)
D1 D2

(4)
(2) G2 *Pb-free plating product number: UT7317L
G1

S1 S2
(1) (3)

„ ORDERING INFORMATION
Ordering Number
Package Packing
Normal Lead Free Plating
UT7317-S08-R UT7317L-S08-R SOP-8 Tape Reel
UT7317-S08-T UT7317L-S08-T SOP-8 Tube

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UT7317 Power MOSFET

„ PIN CONFIGURATION

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„ ABSOLUTE MAXIMUM RATINGS (TA = 25 , unless otherwise noted)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 30
V
Gate-Source Voltage VGSS ±20
Continuous Drain Current (Note 3) ID 6
A
Pulsed Drain Current (Note 3) IDM 24
Power Dissipation PD 2.5 W
Maximum Junction Temperature TJ 150
Storage Temperature Range TSTG -55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Junction to Ambient (Note3) θJA 50 /W

„ ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 30 V
Drain-Source Leakage Current IDSS VDS=24V, VGS=0V 1 uA
Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA 1 1.5 2 V
VGS=10V, ID=3.5A 21 28 mΩ
Drain-Source On-State Resistance (Note2) RDS(ON)
VGS=4.5V, ID=2A 27 42 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1200 pF
Output Capacitance COSS VGS=0V,VDS=25V,f=1.0MHz 210 pF
Reverse Transfer Capacitance CRSS 95 pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2) tD(ON) 11 22 ns
Turn-ON Rise Time tR VDD=15V, VGS=10V, ID=2A, 17 33 ns
Turn-OFF Delay Time tD(OFF) RG=6Ω 37 68 ns
Turn-OFF Fall Time tF 20 38 ns
Total Gate Charge (Note2) QG 30 36 nC
Gate-Source Charge QGS VDS=15V, VGS=10V, ID=10A 5.8 nC
Gate-Drain Charge QGD 3.8 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) VSD IS=2A, VGS=0V 0.7 1.3 V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t 10sec.

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 UT7317 Power MOSFET

„ TYPICAL CHARACTERISTICS
Output Characteristics Transfer Characteristics
30 40

VGS=4,4.5,6,8,10V
25
30
Drain Current,IDS (A)

Drain Current,IDS (A)

20

15 20
VGS=3.5V TJ=25

10
VGS=3V 10 TJ=125 TJ=-55
5
VGS=2.5V

0 0
0 1 2 3 4 5 6 7 8 9 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage,VDS (V) Gate-to-Source Voltage,VGS (V)
On-Resistance,RDS(ON) ( )
On-Resistance,RDS(ON) ( )

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UT7317 Power MOSFET

„ TYPICAL CHARACTERISTICS(Cont.)
Source-Drain Diode Forward Voltage Single Pulse Power
100 80

60
Source Current,ISD (A)

10

Power (W)
40
TJ=125 TJ=-55
1
20
TJ=25

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10
Source to Drain Voltage,VSD (V) Time (sec)
Normalized Effective Transient
Thermal Impedance

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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