UNISONIC TECHNOLOGIES CO.

, LTD
18N60 Power MOSFET

18A, 600V N-CHANNEL

POWER MOSFET

1
 DESCRIPTION TO-247
The UTC 18N60 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.

 FEATURES 1 1
* RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A TO-3P TO-3PN
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

 SYMBOL
2.Drain

1.Gate

3.Source

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
18N60L-T3P-T 18N60G-T3P-T TO-3P G D S Tube
18N60L-T3N-T 18N60G-T3N-T TO-3PN G D S Tube
18N60L-T47-T 18N60G-T47-T TO-247 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

18N60G-T3P-T
(1)Packing Type (1) T: Tube

(2)Package Type (2) T3P: TO-3P, T3N: TO-3PN, T47: TO-247

(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free

 MARKING

UTC
18N60 L: Lead Free
G: Halogen Free
Lot Code Date Code
1

www.unisonic.com.tw 1 of 6
Copyright © 2020 Unisonic Technologies Co., Ltd QW-R502-221.I
18N60 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Continuous Drain Current ID 18 A
Pulsed Drain Current IDM 45 A
Avalanche Current IAR 18 A
Avalanche Energy Single Pulsed EAS 506 (Note 2) mJ
Peak Diode Recovery dv/dt dv/dt 3.35 V/ns
TO-247 360 W
Power Dissipation PD
TO-3P/TO-3PN 395 W
Junction Temperature TJ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.18mH, IAS=12.8A, VDD=50V, RG=25Ω, Starting TJ=25°С
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-247 40
Junction to Ambient θJA °С/W
TO-3P/TO-3PN 30
TO-247 0.35
Junction to Case θjC °С/W
TO-3P/TO-3PN 0.32

UNISONIC TECHNOLOGIES CO., LTD 2 of 6

www.unisonic.com.tw QW-R502-221.I
18N60 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 25 µA
Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A (Note) 0.36 0.5 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 2900 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 275 pF
Reverse Transfer Capacitance CRSS 30 pF
SWITCHING PARAMETERS
Total Gate Charge QG 75 nC
VDS=480V, VGS=10V, ID=18A
Gate Source Charge QGS 15 nC
IG=1mA (Note 1, 2)
Gate Drain Charge QGD 20 nC
Turn-ON Delay Time tD(ON) 40 ns
Turn-ON Rise Time tR VDS=100V, VGS=10V, ID=18A, 26 ns
Turn-OFF Delay Time tD(OFF) RGS=25Ω 232 ns
Turn-OFF Fall-Time tF 65 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS VGS=0V 18 A
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM Repetitive 54 A
Forward Current
Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V (Note ) 1.5 V
Reverse Recovery Time trr VGS=0V, dIF/dt=100A/µs, 500 ns
Reverse Recovery Charge Qrr IS=18A, VR=400V 18 µC
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD 3 of 6

www.unisonic.com.tw QW-R502-221.I
18N60 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source Drain-Source On-Resistance vs.

Voltage Gate-Source Voltage
30 5
Note: Note:
1.TA=25°C VGS=6~10V 5.5V 1.TA=25°C

Drain-Source On-Resistance,
25 2.Pulse test
4 2.Pulse test
Drain Current, ID (A)

20

RDS(ON) (Ω)
3
15
5V
2
10
ID=9A 18A
4.5V 1
5

0 0
0 5 10 15 20 3 4 5 6 7 8 9 10

Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

Gate Charge Characteristics Capacitance Characteristics

12 10000
VDS=480V
CISS
Gate-Source Voltage, VGS (V)

VGS=10V
10 ID=18A
Capacitance, C (pF)

Pulsed
8 1000

6 COSS

4 100

2 CRSS

0 10
0 5 10 15 20 25 30 35 40 45 52 55 60 65 70 75 0 10 20 30 40 50
Total Gate Charge, QG (nC) Drain-Source Voltage, VDS (V)

Drain-Source On-Resistance vs. Breakdown Voltage vs. Junction

Junction Temperature Temperature
1.5 1.4
VGS=10V ID=0.25mA
Drain-Source Breakdown Voltage

ID=9.0A Pulsed
Drain-Source On-Resistance,

Pulsed

1 1.2
Normalized
RDS(ON) (Ω)

0.5 1

0 0.8
25 50 75 100 125 150 25 50 75 100 125 150

Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

UNISONIC TECHNOLOGIES CO., LTD 4 of 6

www.unisonic.com.tw QW-R502-221.I
18N60 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Gate Threshold Voltage vs. Source Current vs. Source-Drain

Junction Temperature Voltage
4 100
ID=0.25mA
Gate Threshold Voltage, VGS(TH) (V)

Pulsed
3.5
TA=150°C

Source Current, IS (A)

10
3 25°C

2.5 1

2
0.1
1.5

0 0.01
25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

Junction Temperature, TJ (°C) Source-Drain Voltage, VSD (V)

Drain Current vs. Gate-Source Drain-Source On-Resistance vs.

Voltage Drain Current
18 0.7
TA=25°C TA=25°C
16 VGS=10V
Drain-Source On-Resistance,

Pulsed 0.6
Pulsed
14
Drain Current, ID (A)

12 0.5
RDS(ON) (Ω)

10
0.4
8
6 0.3

4
0.2
2
0 0.1
0 2 4 6 8 10 0 5 10 15 20 25
Gate-Source Voltage, VGS (V) Drain Current, ID (A)

Power Dissipation vs. Junction Drain Current vs. Junction

Temperature Temperature
450 2.5
TO-3PN
400
Power Dissipation, PD (W)

350 2
Drain Current, ID (A)

300
1.5
250
200
1
150
100 0.5
50
0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

UNISONIC TECHNOLOGIES CO., LTD 5 of 6

www.unisonic.com.tw QW-R502-221.I
18N60 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Safe Operating Area

100
MAX
100us
Drain Current, ID (A)

10 1ms
10ms
Operation in this
1 area is limited by DC
RDS(ON)

0.1 TO-3PN
TJ=150°C
TC=25°C
Single Pulse
0.01
1 10 100 1000
Drain-Source Voltage, VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD 6 of 6

www.unisonic.com.tw QW-R502-221.I