UNISONIC TECHNOLOGIES CO.
, LTD
5N50 Power MOSFET
5A, 500V N-CHANNEL
POWER MOSFET
1 1
DESCRIPTION
TO-262 TO-220F
The UTC 5N50 is an N-channel power MOSFET adopting UTC’s
advanced technology to provide customers with DMOS, planar stripe
technology. This technology is designed to meet the requirements of
the minimum on-state resistance and perfect switching performance.
It also can withstand high energy pulse in the avalanche and
communication mode. 1 1
The UTC 5N50 can be used in applications, such as active power
TO-220F1 TO-252
factor correction, high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 1.4Ω @VGS = 10 V, ID =2.5 A
* 100% avalanche tested
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
5N50L-TF3-T 5N50G-TF3-T TO-220F G D S Tube
5N50L-TF1-T 5N50G-TF1-T TO-220F1 G D S Tube
5N50L-TN3-R 5N50G-TN3-R TO-252 G D S Tape Reel
5N50L-T2Q-T 5N50G-T2Q-T TO-262 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
MARKING
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5N50 Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Continuous ID 5 A
Drain Current
Pulsed (Note 2) IDM 20 A
Avalanche Current (Note 2) IAR 5 A
Single Pulsed (Note 3) EAS 300 mJ
Avalanche Energy
Repetitive (Note 2) EAR 7.3 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-262 125 W
Power Dissipation TO-220F/TO-220F1 PD 38 W
TO-252 54 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55~+150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-262/TO-220F
62.5 °C/W
Junction to Ambient TO-220F1 θJA
TO-252 110 °C/W
TO-262 1 °C/W
Junction to Case TO-220F/TO-220F1 θJC 3.25 °C/W
TO-251 2.13 °C/W
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5N50 Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA 0.5 V/°C
VDS=500V, VGS=0V 1
Drain-Source Leakage Current IDSS µA
VDS=400V, TC=125°C 10
Forward VGS=30V, VDS=0V 100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 1.4 Ω
DYNAMIC PARAMETERS
Input Capacitance CISS 535 625 pF
VGS=0V, VDS=25V,
Output Capacitance COSS 70 105 pF
f=1.0MHz
Reverse Transfer Capacitance CRSS 17 20 pF
SWITCHING PARAMETERS
Turn-ON Delay Time tD(ON) 30 45 ns
Rise Time tR VDD=30V, ID=0.5A, 50 70 ns
Turn-OFF Delay Time tD(OFF) RG=25Ω (Note 1, 2) 145 165 ns
Fall-Time tF 72 105 ns
Total Gate Charge QG 20 24 nC
VGS=10V, VDS=50V,
Gate to Source Charge QGS 4 nC
ID=1.3A, IG=100μA (Note 1, 2)
Gate to Drain Charge QGD 5 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS 5 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 20 A
Forward Current
Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V 1.4 V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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5N50 Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
50kΩ VDS QGS QGD
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit Gate Charge Waveforms
Resistive Switching Test Circuit Resistive Switching Waveforms
VDS EAS= 1
2 LIAS
2 BVDSS
BVDSS-VDD
RG BVDSS
ID
L IAS
10V ID(t)
tP DUT
VDD VDD VDS(t)
Time
tP
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
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5N50 Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT +
RG VDS
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
VGS D=
Gate Pulse Period 10V
(Driver)
IFM, Body Diode Forward Current
ISD
(DUT) di/dt
IRM
Body Diode Reverse Current
VDS
(DUT) Body Diode Recovery dv/dt
VSD VDD
Body Diode Forward
Voltage Drop
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5N50 Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300
250 250
Drain Current, ID (µA)
Drain Current, ID (µA)
200 200
150 150
100 100
50 50
0 0
0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 3.5
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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